BAR64-04S 4 Silicon PIN Diode 5 6 Preliminary data High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1MHz up to 3 GHz 2 Low resistance and long carrier life time 3 1 VPS05604 Very low capacitance at zero volts reverse bias at frequencies above 1 GHz Very low signal distortion C1/A2 C3 A4 6 5 4 D2 D1 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type BAR64-04S Marking PPs Pin Configuration Package For pin configuration see figure above SOT363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 150 V Forward current IF 100 mA Total power dissipation Ptot tbd mW Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Value Unit TS = tbd °C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For Value Unit tbd K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 Aug-28-2001 BAR64-04S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 150 - - VF - - 1.1 CT - 0.23 0.35 DC Characteristics Breakdown voltage V(BR) V I(BR) = 5 µA Forward voltage IF = 50 mA AC Characteristics Diode capacitanceVR = 20 V, f = 1 MHz Forward resistance pF rf IF = 1 mA, f = 100 MHz - 12.5 20 IF = 10 mA, f = 100 MHz - 2.1 3.8 IF = 100 mA, f = 100 MHz - 0.85 1.35 rr - 1.55 - µs CC - 0.09 - pF LS - 0.6 - nH Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Case capacitance f = 1 MHz Series inductance 2 Aug-28-2001 BAR64-04S Diode capacitance CT = (VR ) Forward resistance rf = (IF ) f = 1MHz f = 100MHz 10 3 0.7 Ohm pF 10 2 0.5 0.4 RF CT 1 MHz 100 MHz 1 GHz 10 1 0.3 0.2 10 0 0.1 0 0 2 4 6 8 10 12 14 16 V 10 -1 -2 10 20 10 -1 10 0 10 1 10 VR 2 mA10 3 IF Forward current IF = (VF) Intermodulation intercept point IP3 = (IF); TA = 25°C f = Parameter 10 3 10 2 mA 10 2 f=900MHz IP3 IF f=1800MHz 10 1 dBm 10 0 10 -1 10 -2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 10 1 -1 10 1 VF 10 0 mA 10 1 IF 3 Aug-28-2001