SPU30N03S2L-10 Preliminary data OptiMOS Power-Transistor Product Summary Feature N-Channel Logic Level Low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m ID 30 A P-TO251 Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications Type Package Ordering Code Marking SPU30N03S2L-10 P-TO251 Q67042-S4042 2N03L10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C,1) 30 TC=100°C 30 ID puls 120 EAS 150 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 82 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =30 A , VDD =25V, RGS =25 Reverse diode dv/dt mJ kV/µs IS =30A, VDS =24V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2002-02-11 SPU30N03S2L-10 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.8 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 2) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1,6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =50µA Zero gate voltage drain current µA IDSS VDS =30V, VGS =0V, Tj=25°C - 0.01 1 VDS =30V, VGS =0V, Tj=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 11.6 14.6 m RDS(on) - 8.1 10 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=30A Drain-source on-state resistance VGS =10V, ID =30A 1Current limited by bondwire; with a R thJC = 1.8 K/W the chip is able to carry I D = 64A and calculated with max. source pin temperature of 85°C. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-02-11 SPU30N03S2L-10 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 23.8 47.5 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =30A Input capacitance Ciss VGS =0V, VDS =25V, - 1170 1460 Output capacitance Coss f=1MHz - 490 610 Reverse transfer capacitance Crss - 125 155 Turn-on delay time td(on) - 6.1 9.2 Rise time tr - 63 94 Turn-off delay time td(off) - 27 41 Fall time tf - 17 26 - 3.8 4.3 - 10.8 16.2 - 31.5 39.4 V(plateau) VDD =24V, ID=30A - 3.4 - V IS - - 30 A - - 120 VDD =15V, VGS=10V, ID =30A, RG =5.4 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =30A VDD =24V, ID =30A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =30A - 0.9 1.2 V Reverse recovery time trr VR =-V, IF=lS, - 25.5 38 ns Reverse recovery charge Qrr diF /dt=100A/µs - 26.5 40 nC Page 3 2002-02-11 SPU30N03S2L-10 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 100 parameter: VGS 10 V SPU30N03S2L-10 32 W SPU30N03S2L-10 A 80 24 ID Ptot 70 60 50 20 16 40 12 30 8 20 4 10 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 3 SPU30N03S2L-10 SPU30N03S2L-10 K/W A 10 0 Z thJC /I D tp = 7.9µs 10 µs 10 -1 R DS (o n) = ID V DS 10 2 100 µs D = 0.50 10 10 -2 0.20 0.10 1 1 ms 0.05 single pulse 0.02 10 -3 10 ms 0.01 DC 10 0 -1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2002-02-11 SPU30N03S2L-10 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 50 e d c VGS[V]= a= 3.5 b= 4.0 c= 4.5 d= 5.0 e= 5.5 50 45 40 ID m b 35 30 VGS[V]= a= 3.5 b= 4.0 c= 4.5 d= 5.0 e= 5.5 a 40 RDS(on) 60 A 35 30 b 25 a 25 20 20 15 c 15 10 10 5 5 0 0 d e 0.5 1 1.5 2 2.5 3 3.5 V 0 0 4.5 10 20 30 40 A 50 VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs 60 60 A S 50 50 45 45 40 40 g fs ID ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 70 ID V 5 VGS Page 5 0 0 10 20 30 40 A 60 ID 2002-02-11 SPU30N03S2L-10 Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 30 A, VGS = 10 V parameter: VGS = VDS 24 SPU30N03S2L-10 2.5 V 18 V GS(th) RDS(on) 20 16 14 max 1.5 typ 12 98% 10 1 typ 8 min 6 0.5 4 2 0 -60 -20 20 60 100 °C 140 0 -60 200 -20 20 60 100 °C 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 SPU30N03S2L-10 A pF IF C 10 2 Ciss 10 3 Coss 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Crss Tj = 175 °C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2002-02-11 SPU30N03S2L-10 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 30 A , VDD = 25 V, RGS = 25 parameter: ID = 30 A pulsed 160 16 mJ V 12 VGS 120 E AS SPU30N03S2L-10 100 10 80 8 60 6 40 4 20 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 0,2 VDS max 5 10 15 20 25 0,8 VDS max 30 35 40 nC 50 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 SPU30N03S2L-10 V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2002-02-11 Preliminary data SPU30N03S2L-10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPU30N03S2L-10, for simplicity the device is referred to by the term SPU30N03S2L-10 throughout this documentation. Page 8 2002-02-11