Preliminary data BSO613SPV SIPMOSī Small-Signal-Transistor Features Product Summary · P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS(on) 0.13 W · Avalanche rated Continuous drain current ID -3.44 A · dv/dt rated S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View Type Package Ordering Code BSO613SPV SO 8 Q67042-S4021 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current SIS00062 Value Unit ID -3.44 A ID puls -13.8 T A = 25 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse EAS 150 I D = -3.44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax EAR 0.25 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 2.5 W -55... +150 °C mJ kV/µs I S = -3.44 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 1999-11-22 Preliminary data BSO613SPV Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 - - 100 - - 50 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) RthJA SMD version, device on PCB: @ min. footprint; t £ 10 sec. @ 6 cm 2 cooling area 1); t £ 10 sec. Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = 1 mA VGS(th) -2.1 -3 -4 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.11 0.13 W Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -10 V, I D = -3.44 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-11-22 Preliminary data BSO613SPV Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 2.2 4.4 - S Ciss - 700 875 pF Coss - 235 295 Crss - 95 120 td(on) - 10 15 tr - 11 16.5 td(off) - 32 48 tf - 12 18 Dynamic Characteristics Transconductance VDS³2*I D*RDS(on)max , ID = -3.44 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Rise time VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Turn-off delay time VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Fall time VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Page 3 1999-11-22 Preliminary data BSO613SPV Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 1.6 2.4 Qgd - 10 15 Qg - 20 30 V(plateau) - -3.74 - Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -3.44 A Gate to drain charge VDD = -48 V, ID = -3.44 A Gate charge total VDD = -48 V, ID = -3.44 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -3.44 A Parameter Symbol Values Unit min. typ. max. IS - - -3.44 ISM - - -13.8 VSD - -0.87 -1.16 V trr - 56 84 ns Qrr - 38 57 nC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -3.44 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Page 4 1999-11-22 Preliminary data BSO613SPV Power Dissipation Drain current Ptot = f (T A) ID = f (TA ) parameter: VGS ³ 10 V BSO613SPV BSO613SPV -3.8 2.8 W A 2.4 -3.2 2.2 -2.8 1.8 ID Ptot 2.0 -2.4 1.6 -2.0 1.4 1.2 -1.6 1.0 -1.2 0.8 0.6 -0.8 0.4 -0.4 0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 °C 120 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T -10 2 BSO613SPV 10 2 BSO613SPV K/W A tp = 550.0µs /I D 1 = ID RD S( V DS 10 1 1 ms ) on ZthJC -10 160 10 ms 10 0 -10 0 D = 0.50 10 -1 0.20 0.10 0.05 -10 -1 10 -2 0.02 single pulse 0.01 DC -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 3 tp Page 5 1999-11-22 Preliminary data BSO613SPV Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs RDS(on) = f (ID ) parameter: VGS BSO613SPV A BSO613SPV Ptot = 2.50W 0.42 W j i h -7.0 VGS [V] a -3.0 g -3.5 c -3.7 d -4.0 e -4.2 f -4.5 g -4.7 h -5.0 i -5.5 d j -10.0 f -6.0 ID b -5.0 e -4.0 b c d e f 0.36 0.32 RDS(on) -8.5 0.28 0.24 0.20 0.16 -3.0 g 0.12 -2.0 c h i 0.08 b j VGS [V] = -1.0 0.04 a 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.00 0.0 -5.0 b c d e f -3.5 -3.7 -4.0 -4.2 -4.5 -1.0 -2.0 g h i j -4.7 -5.0 -5.5 -10.0 -3.0 -4.0 -5.0 A VDS -7.0 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS³ 2 x I D x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs -10 7 A S -8 5 gfs ID -7 -6 4 -5 3 -4 -3 2 -2 1 -1 0 0 -1 -2 -3 -4 0 0 -6 VGS V Page 6 -1 -2 -3 -4 -5 -6 -7 -8 A -10 ID 1999-11-22 Preliminary data BSO613SPV Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -3.44 A, VGS = -10 V parameter: VGS = VDS , ID = 1 mA BSO613SPV -5.0 0.34 W V -4.0 VGS(th) RDS(on) 0.28 0.24 0.20 0.16 -3.5 98% -3.0 98% -2.5 typ -2.0 typ. 0.12 2% -1.5 0.08 -1.0 0.04 -0.5 0.00 -60 -20 20 60 °C 100 0.0 -60 180 -20 20 60 100 180 °C Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 pF BSO613SPV A 10 3 -10 1 IF C Ciss Coss 10 2 -10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Page 7 1999-11-22 Preliminary data BSO613SPV Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -3.44 A pulsed para.: I D = -3.44 A , VDD = -25 V, RGS = 25 BSO613SPV 160 -16 mJ V -12 VGS EAS 120 100 80 -10 -8 0,2 VDS max 60 -6 40 -4 20 -2 0 25 45 65 85 105 125 165 °C 0 0 4 8 12 0,8 VDS max 16 20 24 nC 30 QGate Tj Drain-source breakdown voltage V(BR)DSS = f (Tj) BSO613SPV -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Page 8 1999-11-22 Preliminary data BSO613SPV Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-11-22