Final data BSP318S SIPMOS Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage • Drain-Source on-state resistance RDS(on) Enhancement mode • Avalanche rated Continuous drain current VDS ID 60 V 0.09 Ω 2.6 A • Logic Level • dv/dt rated 4 3 2 1 VPS05163 Type Package Ordering Code Pin 1 Pin 2, 4 PIN 3 BSP318S SOT-223 Q67000-S4002 G D S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value Continuous drain current ID 2.6 Pulsed drain current ID puls 10.4 Unit A T A = 25 °C EAS 60 mJ Avalanche current,periodic limited by T jmax IAR 2.6 A Avalanche energy, periodic limited by Tjmax EAR 0.18 mJ Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 °C Avalanche energy, single pulse I D = 2.6 A, V DD = 25 V, R GS = 25 Ω kV/µs I S = 2.6 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 1999-10-28 Final data BSP318S Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 17 - @ min. footprint - 100 - @ 6 cm 2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) RthJA SMD version, device on PCB: Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - Gate threshold voltage, VGS = VDS I D = 20 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA µA VDS = 60 V, V GS = 0 V, Tj = 25 °C - 0.1 1 VDS = 60 V, V GS = 0 V, Tj = 150 °C - - 100 IGSS - 10 100 nA RDS(on) - 0.12 0.15 Ω RDS(on) - 0.07 0.09 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 2.6 A Drain-Source on-state resistance VGS = 10 V, I D = 2.6 A 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-10-28 Final data BSP318S Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 2.4 5.5 - S Ciss - 300 380 pF Coss - 90 120 Crss - 50 65 td(on) - 12 20 tr - 15 25 td(off) - 20 30 tf - 15 25 Dynamic Characteristics Transconductance VDS≥2*I D*RDS(on)max , ID = 2.6 A Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Rise time VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Turn-off delay time VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Fall time VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Page 3 1999-10-28 Final data BSP318S Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. QG(th) - 0.4 0.6 Gate charge at V GS = 5 V VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V Qg(5) - 7 10 Gate charge total Qg - 14 20 V(plateau) - 3.6 - Dynamic Characteristics Gate charge at threshold nC VDD = 40 V, ID = 0.1 A, V = 1 V VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 40 V , I D = 2.6 A Parameter Symbol Values Unit min. typ. max. IS - - 2.6 ISM - - 10.4 VSD - 0.95 1.2 V trr - 50 75 ns Qrr - 0.1 0.15 µC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = 5.2 A Reverse recovery time VR = 30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Page 4 1999-10-28 Final data BSP318S Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) BSP318S BSP318S 1.9 2.8 A W 2.4 1.6 2.2 2.0 1.2 ID Ptot 1.4 1.8 1.6 1.0 1.4 1.2 0.8 1.0 0.6 0.8 0.6 0.4 0.4 0.2 0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJA = f(tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T 10 2 BSP318S 10 2 A BSP318S K/W tp = 140.0µs /I D = R ( DS on V 10 1 DS Z thJA 10 1 ID 160 ) 1 ms 10 0 10 0 D = 0.50 10 ms 0.20 0.10 10 -1 0.05 10 -1 0.02 single pulse 0.01 DC 10 -2 -1 10 10 0 10 1 V 10 2 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 5 1999-10-28 Final data BSP318S Typ. output characteristic Typ. transfer characteristics ID = f ( VGS ) I D = f (VDS); T j=25°C parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs BSP318S 6.5 15 Ptot = 1.80W A A VGS [V] a 2.0 5.0 ID 4.5 c 4.0 3.5 3.0 2.5 2.0 b 2.5 12 c 3.0 11 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 6 k 8.0 5 l 10.0 10 ID g ihjfe lk d 5.5 9 8 7 4 b 1.5 3 1.0 2 0.5 1 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0 0 5.0 1 2 3 4 5 6 7 8 VDS V 10 VGS Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = 2.6 A, V GS = 4.5 V parameter: VGS = VDS , ID = 20 µA BSP318S 0.36 3.0 Ω V 2.4 V GS(th) RDS(on) 0.28 0.24 0.20 2.2 2.0 1.8 1.6 98% 1.4 0.16 typ 1.2 0.12 1.0 max 0.8 0.08 0.6 typ 0.4 0.04 0.2 0.00 -60 -20 20 60 100 °C 180 Tj 0.0 -60 min -20 20 60 100 140 °C 200 Tj Page 6 1999-10-28 Final data BSP318S Typ. capacitances Forward characteristics of reverse diode C = f(V DS) IF = f (VSD ) parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 BSP318S A pF Ciss C IF 10 1 10 2 Coss 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 0.4 0.8 1.2 1.6 2.0 2.4 V VSD VDS E AS = f (T j) Avalanche Energy 3.0 Typ. gate charge parameter: ID = 2.6 A, VDD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID = 2.6 A pulsed BSP318S 65 16 mJ V 55 50 12 VGS EAS 45 40 10 35 8 30 0,2 VDS max 25 0,8 VDS max 6 20 4 15 10 2 5 0 20 40 60 80 100 120 °C 160 Tj 0 0 4 8 12 16 nC 24 QGate Page 7 1999-10-28 Final data BSP318S Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP318S 72 V(BR)DSS V 68 66 64 62 60 58 56 54 -60 -20 20 60 100 °C 180 Tj Page 8 1999-10-28 Final data BSP318S Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-10-28