Preliminary data OptiMOS =Power-Transistor BSO604NS2 Product Summary Feature • Dual N-Channel • Enhancement mode • Logic Level VDS 55 V RDS(on) 35 mΩ ID 5 A •150 °C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Marking BSO604NS2 P-DSO-8-6 Q67060-S7309 2N604L Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C, one channel active 5 TA=70°C, one channel active 4 ID puls 20 EAS 90 mJ dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation, one channel active Ptot 2 W -55... +150 °C Pulsed drain current, one channel active TA=25°C Avalanche energy, single pulse ID =5 A , VDD =25V, RGS =25Ω Reverse diode dv/dt IS =5A, VDS =44V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2000-10-06 Preliminary data BSO604NS2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 50 - - 100 - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint ; t ≤=10 s @ 6 cm 2 cooling area 1) ; t ≤10 s K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =30µA Zero gate voltage drain current µA IDSS VDS =55V, VGS =0V, Tj=25°C - 0.01 1 VDS =55V, VGS =0V, Tj=150°C - 1 100 IGSS - 1 100 nA RDS(on) - 34 44 mΩ RDS(on) - 27 35 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID =2.6A Drain-source on-state resistance VGS =10V, ID=2.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2000-10-06 Preliminary data BSO604NS2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 6.7 13.4 - S pF Dynamic Characteristics Transconductance gfs VDS ≥ 2 * ID * RDS(on)max=0.4V, ID=5A Input capacitance Ciss VGS =0V, VDS =25V, - 735 920 Output capacitance Coss f=1MHz - 174 220 Reverse transfer capacitance Crss - 118 160 Turn-on delay time td(on) VDD =27.5V, VGS =4.5V, - 9 14 Rise time tr ID =5A, RG =75Ω - 16 24 Turn-off delay time td(off) - 52 78 Fall time tf - 8 12 - 2 3 - 6 8 - 19 24 V(plateau) VDD =44V, ID=5A - 2.9 - V IS - - 5 A - - 20 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =44V, ID=5A VDD =44V, ID=5A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =5A - 0.9 1.3 V Reverse recovery time trr VR =27.5V, IF=lS, - 32 40 ns Reverse recovery charge Qrr diF /dt=100A/µs - 34 43 nC Page 3 2000-10-06 Preliminary data BSO604NS2 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: VGS ≥ 10 V BSO604NS2 BSO604NS2 2.2 R thJC thJA W A 1.8 4.5 1.6 4.0 1.4 3.5 ID Ptot 5.5 1.2 3.0 1.0 2.5 0.8 2.0 0.6 1.5 0.4 1.0 0.2 0.5 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 2 BSO604NS2 10 2 = R S tp = 46.0µs 10 1 ) on 100 µs ID Z thJC 10 1 ( DS VD BSO604NS2 K/W /I D A 160 TA 3 Safe operating area 10 °C 10 0 1 ms 10 0 10 -1 10 ms D = 0.50 0.20 10 -2 0.10 0.05 10 -1 0.02 10 -3 DC 10 -2 -1 10 10 0 10 1 V 10 2 VDS 10 -4 -7 10 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2000-10-06 Preliminary data BSO604NS2 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS BSO604NS2 12 BSO604NS2 h 120 Ptot = 2W A mΩ e d 10 9 c 8 ID c VGS [V] a 3.0 7 6 b 3.2 c 3.4 d 3.6 e 3.8 f 4.0 g 4.5 h 10.0 100 RDS(on) gf d 80 70 e 60 b 5 90 50 4 f 40 3 g 30 a 2 h 20 VGS [V] = 1 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0 0 5.0 c 3.4 1 d 3.6 e f 3.8 4.0 2 3 g h 4.5 10.0 4 5 6 7 8 VDS A 10 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 20 24 A S 20 16 18 g fs ID 14 12 16 14 10 12 8 10 8 6 6 4 4 2 0 0.0 2 0.5 1.0 1.5 2.0 2.5 3.0 4.0 V VGS Page 5 0 0 2 4 6 8 10 12 14 16 A ID 20 2000-10-06 Preliminary data BSO604NS2 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 2.6 A, VGS = 10 V parameter: VGS = VDS BSO604NS2 2.5 110 mΩ V V GS(th) RDS(on) 90 80 70 150 µA 1.5 60 30 µA 50 1.0 98% 40 30 typ 0.5 20 10 0 -60 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 180 °C Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 BSO604NS2 A pF C IF 10 1 10 3 Ciss 10 0 Tj = 25 °C typ Coss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) Crss 10 2 0 5 10 15 20 V 30 VDS 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Page 6 2000-10-06 Preliminary data BSO604NS2 13 Avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 5 A , VDD = 25 V, RGS = 25 Ω parameter: ID = 5 A pulsed BSO604NS2 90 16 mJ V 12 60 VGS E AS 70 10 0,2 VDS max 50 0,8 VDS max 8 40 6 30 4 20 2 10 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 4 8 12 16 20 24 nC 30 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA BSO604NS2 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 °C 180 Tj Page 7 2000-10-06 Preliminary data BSO604NS2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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