Preliminary data SPI70N10L SPP70N10L,SPB70N10L SIPMOSī =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 RDS(on) 16 m ID 70 A P-TO263-3-2 Type Package Ordering Code Marking SPP70N10L P-TO220-3-1 Q67040-S4175 70N10L SPB70N10L P-TO263-3-2 Q67040-S4170 70N10L SPI70N10L P-TO262-3-1 Q67060-S7428 70N10L V P-TO220-3-1 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 70 TC=100°C 50 ID puls 280 EAS 700 Avalanche energy, periodic limited by Tjmax EAR 25 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 250 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =70 A , VDD =25V, RGS =25 mJ kV/µs IS =70A, VDS =0V, di/dt=200A/µs TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - ambient, leaded RthJA - - 62.5 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =2mA Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current µA IDSS VDS =100V, VGS =0V, Tj =25°C - 0.1 1 VDS =100V, VGS =0V, Tj =150°C - - 100 IGSS - 10 100 nA RDS(on) - 14 25 m RDS(on) - 10 16 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=50A Drain-source on-state resistance VGS =10V, ID =50A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 30 65 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =50A Input capacitance Ciss VGS =0V, VDS =25V, - 3630 4540 Output capacitance Coss f=1MHz - 640 800 Reverse transfer capacitance Crss - 345 430 Turn-on delay time td(on) - 70 105 Rise time tr - 250 375 Turn-off delay time td(off) - 250 375 Fall time tf - 95 145 - 10 15 - 34 51 - 160 240 V(plateau) VDD =80V, ID=70A - 3.22 - V IS - - 70 A - - 280 VDD =50V, VGS=4.5V, ID =70A, RG =1.3 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =70A VDD =80V, ID =70A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =140A - 1.2 1.8 V Reverse recovery time trr VR =50V, IF =lS , - 100 150 ns Reverse recovery charge Qrr diF /dt=100A/µs - 600 900 nC Page 3 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 280 parameter: VGS 10 V SPP70N10L 75 W SPP70N10L A 220 60 200 55 180 ID Ptot 240 160 50 45 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 3 SPP70N10L 10 1 SPP70N10L K/W A tp = 18.0µs Z thJC 10 0 ID 10 2 /I D 100 µs 10 -1 =V DS 10 -2 D = 0.50 DS (on ) 0.20 R 10 1 10 1 ms 0.10 -3 0.05 0.02 10 ms 10 -4 single pulse 10 -5 -7 10 10 0.01 DC 10 0 -1 10 10 0 10 1 10 2 V 10 3 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 170 SPP70N10L 80 Ptot = 250W A VGS [V] a e 140 ID 120 80 3.0 c 3.5 d d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 c 60 40 60 50 30 20 10 VGS [V] = 20 b 3.0 a 1 2 3 d 40 b 0 0 c 2.5 b 100 b m RDS(on) ki l j hg f SPP70N10L V 4 0 0 5.5 c 3.5 20 e f g h i k l j d 4.0 e f 4.5 5.0 40 g 5.5 h i 6.0 6.5 60 80 j 7.0 k l 8.0 10.0 100 A 130 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 60 70 A S 60 50 55 45 45 g fs ID 50 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 10 20 30 40 A 55 ID VGS Page 5 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 50 A, VGS = 4.5 V parameter: VGS = VDS , ID = 2 mA 110 SPP70N10L 3 V m 2.4 80 V GS(th) RDS(on) 90 70 2.2 2 1.8 60 1.6 50 1.4 1.2 40 98% 30 0.8 typ 0.6 20 typ 0.4 10 0 -60 max 1 min 0.2 -20 20 60 100 140 °C 0 -60 200 -20 20 60 100 140 Tj °C 200 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 SPP70N10L A pF Ciss C IF 10 2 10 3 Coss 10 1 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 25 30 V 40 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 70 A , VDD = 25 V, RGS = 25 parameter: ID = 70 A pulsed 16 700 SPP70N10L mJ V 600 12 500 VGS E AS 550 450 10 0,2 VDS max 400 0,8 VDS max 8 350 300 6 250 200 4 150 100 2 50 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 40 80 120 160 200 nC 280 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP70N10L V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2001-08-24 Preliminary data SPI70N10L SPP70N10L,SPB70N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP70N10L, BSPB70N10L and BSPI70N10L, for simplicity the device is referred to by the term SPP70N10L, SPB70N10L and SPI70N10L throughout this documentation Page 8 2001-08-24