Silicon Schottky Diode BAT 62 ● Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration (tape and reel) Package1) BAT 62 62 Q62702-A971 SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 40 V Forward current IF 20 mA Total power dissipation, TS ≤ 85 ˚C Ptot 100 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Junction - ambient2) Rth JA ≤ 810 Junction - soldering point Rth JS ≤ 650 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 02.96 BAT 62 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse current VR = 40 V IR – – 10 µA Forward voltage IF = 2 mA VF – 0.58 1 V Diode capacitance VR = 0, f = 1 MHz CT – 0.35 0.6 pF Case capacitance CC – 0.1 – Differential resistance VR = 0, f = 10 kHz R0 – 225 – kΩ Series inductance LS – 2 – nH Forward current IF = f (VF) Semiconductor Group Forward current IF = f (TS; TA*) *Package mounted on alumina 2 BAT 62 Reverse current IR = f (VR) f = 1 MHz Diode capacitance CT = f (VR) f = 1 MHz Rectifier voltage V0 = f (Vi) f = 900 MHz Semiconductor Group 3