2SA1213 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) SOT-89 FEATURES z z z z Small Flat Package Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time z Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-2V, IC=-500mA 70 VCE=-2V, IC=-2A 20 240 Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-1A,IB=-50mA -1.2 V Collector output capacitance Cob Transition frequency fT 40 VCB=-10V,IE=0, f=1MHz VCE=-2V,IC= -0.5A 100 pF MHz CLASSIFICATION OF hFE 2012-0 RANK O Y RANGE 70–140 120–240 MARKING NO NY WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1213 SOT-89 Plastic-Encapsulate Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features FE 1000 C COMMON design, excellent power dissipation offers EMITTER -6mA Ta=25 ℃ leakage current and thermal resistance. -5.4mA COMMON EMITTER VCE=-2V better reverse -800 -4.8mA surface mounted application in order to • Low profile -4.2mA optimize board space. -3.6mA loss, high efficiency. • Low power -600 drop. • High current capability, low forward voltage-3mA • High surge capability. -2.4mA -400 for overvoltage protection. • Guardring -1.8mA • Ultra high-speed switching. -1.2mA • Silicon-200epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of I =-600uA MIL-STD-19500 /228 -0 -0.0 -0.5 packing -1.0 code -1.5 suffix -2.0 -3.0 -3.5 for "G" -2.5 • RoHS product COLLECTOR-EMITTER VOLTAGE Halogen free product for packing code suffixVCE"H"(V) SOD-123H 300 Ta=100 ℃ DC CURRENT GAIN COLLECTOR CURRENT hFE IC (mA) Pb Free Product Package outline h —— I Static Characteristic -1000 • Batch process THRU Ta=25 ℃ 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 100 0.071(1.8) 0.056(1.4) 30 B —— BEsat -1000 BASE-EMMITTER SATURATION VOLTAGE VBEsat (mV) Method 2026 IC Ta=100 ℃ • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram -10 VCEsat -1000 β=20 Ratings at 25℃ ambient temperature unless otherwise specified. -200 -1 -10 -100 -1000 -3 Single phase half wave, 60Hz, resistive of-30inductive load. -300 COLLECTOR CURRENT IC (mA) For capacitive load, derate current by 20% VBE Ta=100 ℃ -30 Maximum RMS Voltage VRMS 14 21 VDC 20 30 COLLECTOR CURRENT IC Maximum DC Blocking Voltage -100 Ta=100 ℃ IO Maximum Average-30Forward Rectified Current ℃ Ta=25 IFSM -10 superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range -1 TJ -0.4 -0.6 BASE-EMITTER VOLTAGE P 600 CHARACTERISTICSC —— Ta VBE COLLECTOR POWER DISSIPATION PC (mW) NOTES: -30 -10 -300 -100 IC 300 14 40 15 50 16 60 18 80 28 35 42 56 40 50 60 80 Cib -1000 (mA) 30 -0.8 -1.0 -0.1 115 150 120 200 Volts 70 105 140 Volts 100 150 200 Volts Amps Amps 40 120 -55 to +125 10 VCE=-2V f=1MHz 10 IE=0/IC=0 100 Ta=25 ℃ 1.0 Cob30 100 TSTG (V) VF Maximum Average500Reverse Current at @T A=25℃ 0.50 -0.3 ℃/W PF -55 to +150 -1 -10 -3 - 65 to +175 REVERSE VOLTAGE 0.70 V ℃ -20 ℃ (V) 0.85 0.5 IR @T A=125℃ Rated DC Blocking Voltage -3 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC RΘJA Typical Thermal Resistance (Note 2) -3 -0.2 β=20 (pF) 13 30 (mA) 12 20 -0.0 Ta=25 ℃ COLLECTOR CURRENT VRRM Storage Temperature Range 0.031(0.8) Typ. Dimensions in inches and (millimeters) -100 -1 Maximum Recurrent -300 Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave 0.040(1.0) 0.024(0.6) Cob/Cib —— VCB/VEB FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH1000 Marking Code IC 0.031(0.8) Typ. C —— -2000 (mA) -10 CAPACITANCE IC RATINGS -1000 —— -1000 -500 IC -300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -100 -30 COLLECTOR CURRENT • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H T =25 ℃ , • Terminals :Plated terminals, solderable per MIL-STD-750 a -3 -1 COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) Mechanical dataV 10 0.9 0.92 Volts 10 mAmps 400 1- Measured at 1 MHZ 300 and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 2012-06 2012-0 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1213 THRU SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY FM1200-M+ BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) .102(2.60) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH .091(2.30) RATINGS .154(3.91) Marking Code Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TJ TSTG 13 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 14 21 28 35 42 56 70 105 140 Volts 20 30 40 50 60 80 100 150 200 Volts 1.0 30 40 120 -55 to +125 .197(0.52) .013(0.32) Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 .017(0.44) .014(0.35) .118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 (3.0)TYP 0.92 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 12 .023(0.58) 20 30 .016(0.40) @T A=125℃ IR 0.5 ℃ UNIT Volts mAmps 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1213 THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Pb Free Product Package outline SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (3) 2SA1213 x –SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage protection. • Guardring 0.071(1.8) Ultra high-speed switching. • Note: (1) CASE:SOT‐89 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free MIL-STD-19500 /228 (3) CLASSIFICATION OF hFE RANK • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Codefor any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM contained are intended to provide a product description only. "Typical" parameters Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DCwhich may be included on WILLAS data sheets and/ or specifications can Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward WILLAS does not assume any liability arising out of the application or Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) use of any product or circuit. RΘJA ℃/W 40 Typical Thermal Resistance (Note 2) PF 120 Typical Junction CJ Capacitance (Note 1) -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT applications where a failure or malfunction of component or circuitry may directly Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ or indirectly cause injury or threaten a life without expressed written approval IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.