WILLAS FM120-M+ 2SC4672 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SOT-89 TRANSISTOR (NPN)design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. SOD-123H FEATURES • Low profile surface mounted application in order to board space. z Lowoptimize Saturation Voltage • Low power loss, high efficiency. z Excellent hFE Characteristics capability, low forward voltage drop. • High current High surge capability. • z Complements the 2SA1797 • Guardring for overvoltage protection. z Pb-Free package is available switching. • Ultra high-speed 0.146(3.7) 0.130(3.3) 1. BASE 0.012(0.3) Typ. 2. COLLECTOR 0.071(1.8) 0.056(1.4) 3. EMITTER RoHS product for packing code suffix "G"junction. epitaxial planar chip, metal silicon • Silicon Halogen free parts product packing code suffix "H" meetfor environmental standards of • Lead-free MIL-STD-19500 /228 Moisture Sensitivity Level 1 • RoHS product for packing code suffix "G" z Pb Free Produc Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) • Case : Molded plastic, SOD-123H , Symbol Parameter • Terminals :Plated terminals, solderable per MIL-STD-750 VCBO 0.031(0.8) Typ. Value Collector-Base Voltage Method 2026 : Indicated by cathode Collector-Emitter Voltageband VCEO• Polarity Position : Any Emitter-Base Voltage VEBO• Mounting • Weight : Approximated Collector Current0.011 gram IC 0.031(0.8) Typ. Unit 60 V 50 Dimensions in inches and (millimeters) V 6 V 2 A PC Collector Power Dissipation 500 mW MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ambient 250 RθJA at 25℃Thermal ℃/W Ratings ambient Resistance temperature From unlessJunction otherwiseTo specified. Single wave, 60Hz, resistive of inductive load. Junction Temperature Tj phase half For capacitive load, derate current by 20% Tstg Storage Temperature RATINGS 150 ℃ -55~+150 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 12 13 14 15 VRMS 14 21 28 35 VDC 20 30 40 50 16 60 otherwise specified) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless 20 30 40 50 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage Parameter Symbol Maximum DC Blocking Voltage Collector-base voltage Maximum Average breakdown Forward Rectified Current conditions 42 V(BR)CEO IC=1mA,IB=0 V(BR)EBO IE=50µA,IC=0 6 Collector cut-off current Typical Thermal Resistance (Note 2) ICBO RΘJA VCB=60V,IE =0 Typical Junction Capacitance Emitter cut-off current (Note 1) CJ IEBO TJ VEB=5V,IC Emitter-base breakdown voltage superimposed on rated load (JEDEC method) Operating Temperature Range DC current gain hFE Storage Temperature Range TSTG Collector-emitter saturation voltage VCE(sat) CHARACTERISTICS Transition frequency VF Collector output capacitance Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 105 140 150 200 Unit V 30 V 0.1 µA 0.1 µA -55 to +150 VCE=2V, IC=500mA 120 200 82 - 65 to +175 IC=1A,IB=50mA 390 0.35 V FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL fT VCE=2V,I C=0.5A, f=100MHz 210 MHz Maximum Forward Voltage at 1.0A DC CLASSIFICATION OF hFE -55 to +125 100 115 150 V 40 120 =0 Max 80 60 1.0 50 IFSM 70 Typ 60 IC=50µA,IE=0 Collector-emitter breakdown voltage 10 100 56 Min V(BR)CBO IO Peak Forward Surge Current 8.3 ms single half sine-wave Test 18 80 Cob @T A=125℃ IR 0.50 VCB=10V, IE=0, f=1MHz 0.70 0.5 25 0.85 0.9 pF 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. RANK P Q R RANGE 82–180 120–270 180–390 MARKING DKP DKQ DKR 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC4672 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Typical Characterisitics SOD-123+ PACKAGE Static Characteristic 1.0 Package outlineCOMMON EMITTER 300 Features COMMON EMITTER VCE=2V T =25℃process design, excellent power dissipation offers • Batch 4.0mA hFE optimize board space. 3.2mA 0.6 • Low power loss, high efficiency. 2.8mA voltage drop. • High current capability, low forward 2.4mA • High surge capability. 0.4 2.0mA • Guardring for overvoltage protection. 1.6mA • Ultra high-speed switching. 1.2mA 0.2 junction. • Silicon epitaxial planar chip, metal silicon 0.8mA standards of • Lead-free parts meet environmentalI =0.4mA 1 2 for packing code suffix3"G" • 0RoHS product COLLECTOR-EMITTER VOLTAGE 200 Ta=25℃ VCE 0 0.1 4 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any T =100℃ 0.2 • Weight : Approximated 0.011 gram a Ta=25℃ Ratings at 25℃ ambient temperature unless otherwise specified. 0.0 Single phase half wave, 60Hz, resistive of inductive load. 2 0.1 1 0.3 COLLECTOR CURRENT IC (A) For capacitive load, derate current by 20% 0.031(0.8) Typ. 0.031(0.8) Typ. Ta=25℃ 0.8 Dimensions in inches and (millimeters) Ta=100℃ 0.6 0.4 VRRM Maximum 1 RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 a Ta=25℃ Peak Forward Surge Current 8.3 ms single half sine-wave 0.3 superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 0.4 0.6 COLLECTOR CURRENT 0.8 1.0 1000 13 30 14 40 15 50 21 28 35 30 40 50 100 2 (A) Cib 42 56 60 80 f=1MHz10 IE=0/IC=0 100 115 150 120 200 70 105 140 100 150 200 Ta=25℃ 1.0 30 10 1 0.1 40 120 -55 to +125 TSTG 1.2 18 80 -55 to +150 0.3 1 - 65 to +175 3 REVERSE VOLTAGE CHARACTERISTICS PC —— Ta Maximum 600 Forward Voltage at 1.0A DC V 10 20 (V) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR @T A=125℃ Rated DC Blocking Voltage IC 16 60 Cob BASE-EMMITER VOLTAGE VBE (V) 500 1 0.3 C (A) IC COLLECTOR CURRENT Maximum Average Forward Rectified Current T =100℃ 0.1 0.2 β=20 (pF) CE Maximum Recurrent Peak Reverse Voltage 12 20 COLLECTOR POWER DISSIPATION PC (mW) —— IC Cob/ Cib —— VCB/ VFM180-MH FM160-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH EB V =2V 2 (A) 0.040(1.0) 0.024(0.6) 0.2 0.1 CAPACITANCE IC —— VBE RATINGS Marking Code COMMON EMITTER IC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2 VBEsat 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 0.3 COLLECTOR CURRENT β=20 : UL94-V0 rated flame retardant • Epoxy Case : Molded plastic, SOD-123H • 0.4 1.0 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) (V) IC CEsat 0.3 0.146(3.7) 0.130(3.3) 100 Halogen free product for packing code suffix "H" —— MechanicalV data 0.5 SOD-123H B MIL-STD-19500 /228 0.0 DC CURRENT GAIN COLLECTOR CURRENT Ta=100℃ better reverse leakage current and thermal resistance. 3.6mA in order to • Low profile surface mounted application IC (A) a 0.8 Pb Free Produc —— IC hFE 10 NOTES:400 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal 300 Resistance From Junction to Ambient 200 100 0 0 2012-06 2012-0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC4672 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Outline Drawing SOT-89 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .061REF • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .102(2.60) .091(2.30) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH FM140-MH .167(4.25) RATINGS .154(3.91) Marking Code 12 .023(0.58) 20 .016(0.40) VRRM Maximum Recurrent Peak Reverse Voltage 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) IO IFSM Typical Thermal Resistance (Note 2) RΘJA .047(1.2) superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 40 120 -55 to +125 .197(0.52) .013(0.32) A A ℃ -55 to +150 - 65 to +175 .017(0.44) .014(0.35) .118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (3.0)TYPVF 0.9 0.92 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 @T A=125℃ 0.5 IR U V m 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) Rev.C 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC4672 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Packing capability, low forward voltage drop. • High current Device PN (3) surge capability. • High 2SC4672 x –SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) high-speed switching. • Ultra CASE:SOT‐89 epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 (3) CLASSIFICATION OF h FE RANK • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Marking for any errors or inaccuracies. Data sheet specifications and its information Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM contained are intended to provide a product description only. "Typical" parameters V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC A Maximum Average Forward Rectified Current and do vary in different applications and actual performance may vary over time. IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A superimposed on rated load (JEDEC method) use of any product or circuit. ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 TJ WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range Storage Temperature Range TSTG -55 to +150 - 65 to +175 life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U applications where a failure or malfunction of component or circuitry may directly V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.