WILLAS FM120-M A733 SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. power loss, high efficiency. • Low TRANSISTOR (PNP) • High current capability, low forward voltage drop. • High surge capability. FEATURE • Guardring for overvoltage protection. z Collector-Base Voltage switching. • Ultra high-speed Silicon epitaxial planar chip, metal silicon junction. • z Pb-Free package is available • Lead-free parts meet environmental standards of MIL-STD-19500 /228 code suffix ”G” RoHS product for packing • RoHS product for packing code suffix "G" Halogen Halogen free product for packing code suffix “H” free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) SOT-23 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1. BASE 2. EMITTER 3. COLLECTOR Moisture Sensitivity Level 1 Mechanical data z MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) • Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H • Case : Molded Symbol Parameter Value Unit , • Terminals :Plated terminals, solderable per MIL-STD-750 VCBO -60 V Collector-Base Voltage Method 2026 VCEO -50 V -5 V -150 mA Collector Power Dissipation 200 mW Junction Temperature 150 ℃ Collector-Emitter Voltage IC • Polarity : Indicated by cathode band Emitter-Base Voltage : Any • Mounting Position Collector Current -Continuous • Weight : Approximated 0.011 gram PC VEBO 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tj Tstg Ratings at 25℃ ambient temperature unless otherwise specified. Storage Temperature -55-150 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ SYMBOL unlessFM120-MH otherwise specified) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 RATINGS Marking Code 13 14 15 16 50 Min 60 Maximum RMS Voltage Collector-base breakdown voltage -5uA,IE=21 0 V(BR)CBOVRMS IC= 14 28 Collector-emitter breakdown voltage V(BR)CEO 35 -60 42 50 60 Emitter-base breakdown voltage V(BR)EBO Parameter Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Symbol VRRM VDC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on current rated load (JEDEC method) Collector cut-off Typical Thermal Resistance (Note 2) ICBO IO IFSM RΘJA Emitter cut-off current IEBO DC current Operatinggain Temperature Range hFE TJ Typical Junction Capacitance (Note 1) Storage Temperature Range CJ 12 Test 20 conditions 30 40 20 30 IC= -1mA , IB= 0 40 IE= -50uA, IC= 0 10 56 70 80 100 1.0 30 -5 VCB = = -60 V , IE 0 115 120 200 V 105 140 V 150 200 V 40 120 VEB = = -5 V , IC 0 +125 VCE= -6= V,-55 IC to-1mA TSTG -50 18 Typ 80 Max 100 Unit 150 120 - 65 to +175 -0.1 uA -0.1 uA -55 to +150 475 Collector-emitter saturation voltage VCE(sat) Base-emitter voltageCHARACTERISTICS FM130-MH FM160-MH FM180-MH FM1100-MH SYMBOLVFM120-MH = -1.0mAFM140-MH FM150-MH -0.58 -0.62 -0.68 V FM1150-MH FM1200VBE(on) CE=-6V,IC Maximum Forward Voltage at 1.0A DC Transition frequency f Maximum Average Reverse Current at @T A=25℃ T Rated DC Blocking Voltage Collector output capacitance VF @T A=125℃ Cob IR NOTES: Noise figure at 1 MHZ and applied reverse voltage of 4.0NF 1- Measured VDC. IC= -100mA, IB= - 10mA 0.50 = VCE=-6V,IC -10mA VCB=-10V,IE=0,f=1MHZ -0.18 0.70 50 -0.3 0.85 0.5 104.5 VCE=-6V,IC=-0.3mA, Rg=10kΩ,f=100HZ 6 V MHz 7 pF 20 dB 0.9 0.92 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE Rank Range 2012-06 MARKING 2012-0 L H 120-220 220-475 CS WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS A733 SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Static Characteristic dissipation offers • Batch process design, excellent powerCOMMON Mechanical data V Method 2026 • Polarity : Indicated by cathode band T =100℃ • Mounting Position : Any ℃ • Weight : Approximated 0.011T =25 gram a a -30 0 -0.1 VBEsat -10 -100 -150 -30 IC (mA) IC —— 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. -0.8 0.031(0.8) Typ. Ta=25℃ Dimensions in inches and (millimeters) Ta=100℃ -0.4 IC β=10 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Peak Forward Surge Current 8.3 ms single half sine-wave -3 superimposed on rated load (JEDEC method)T =25℃ a RΘJA CJ Typical Junction Capacitance (Note 1) -0.3 -0.2 -0.4 -0.8 BASE-EMMITER VOLTAGE VBE (V) CHARACTERISTICS 300 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IC (mA) (MHz) 40 50 42 56 60 80 Cib 115 150 120 200 70 105 140 100 150 200 Ta=25℃ 1.0 30 40 120 -55 to +150 - 65 to +175 1 -0.1 -1 -3 REVERSE VOLTAGE V -0.3 0.50 PC 0.70 —— Ta IR Ta=25℃ fT COLLECTOR CURRENT 30 250 TRANSITION FREQUENCY 2012-06 -30 -10 35 VCE=-6V 2- Thermal Resistance From Junction to Ambient -3 28 10 f=1MHz 100 IE=0/IC=0 -10 -20 (V) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- 200 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. -1 (mA) 18 80 -1.0 NOTES: 100 21 3 VF Maximum Forward Voltage at 1.0A fT DC —— IC Rated DC Blocking Voltage IC 16 60 Cob TSTG -0.6 15 50 -55 to +125 TJ Operating Temperature Range Storage-0.1Temperature Range IO IFSM 14 40 C Maximum Average Forward Rectified Current 10 CAPACITANCE IC Ta=100℃ 13 30 20 COLLECTOR POWER DISSIPATION PC (mW) (mA) CE -30 -1 -100 -150 -30 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 Cob/ Cib —— VCB/ VEB —— VBE Typical Thermal Resistance (Note 2) -10 COLLECTOR CURRENT VRRM -10 -3 -1 -0.5 (mA) (pF) IC COMMON EMITTER -100 COLLECTOR CURRENT -3 -1 -0.3 COLLECTOR CURRENT -0.0 -0.2 Maximum Recurrent Peak Reverse Voltage V =-6V 2012-0 0.071(1.8) 0.056(1.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS COLLECTOR CURRENT 0.012(0.3) Typ. 100 Ratings at 25℃ ambient temperature unless otherwise specified. β=10 Single -10 phase half wave, 60Hz, resistive of inductive load. -0.3 -3 -30 -1 -10 -100 -150 For capacitive load, derate current by 20% 0.146(3.7) 0.130(3.3) Ta=25℃ I RATINGS 200 (V) -100 Marking Code -150 Ta=100℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— VCE C COMMON EMITTER VCE=-6V -1.2 rated flameCretardant • Epoxy : UL94-V0 CEsat • Case : Molded plastic, SOD-123H -300 , • Terminals :Plated terminals, solderable per MIL-STD-750 -500 FE SOD-123H DC CURRENT GAIN IC COLLECTOR CURRENT COLLECTOR-EMITTER VOLTAGE FM1200-M Package outline h —— I 300 hFE (mA) EMITTER better reverse leakage current and thermal resistance. Ta=25℃ in order to • Low profile surface mounted application -20uA -3 optimize board space. -18uA • Low power loss, high efficiency. -16uA voltage drop. • High current capability, low forward -14uA -2 -12uA • High surge capability. • Guardring for overvoltage protection.-10uA -8uA • Ultra high-speed switching. -6uA -1 junction. • Silicon epitaxial planar chip, metal silicon -4uA of • Lead-free parts meet environmental standards MIL-STD-19500 /228 IB=-2uA for packing code suffix "G" •-0 -0RoHS product -2 -4 -6 -8 -10 Halogen free product for packing code suffix "H" THRU Pb Free Prod SOD-123+ PACKAGE Typical Characterisitics -4 FM120-M 0.9 0.85 0.5 0.92 10 200 150 100 50 0 -100 0 25 50 75 AMBIENT TEMPERATURE 100 125 150 WILLAS ELECTRONIC CO T (℃ ) a WILLAS ELECTRONIC CORP. WILLAS FM120-M A733 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features Outline Drawing SOT-23 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. MIL-STD-19500 /228 .063(1.60) .047(1.20) "G" • RoHS product for packing code suffix .122(3.10) Halogen free product for packing code suffix "H" Mechanical data 0.012(0.3) Typ. .106(2.70) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .080(2.04) Marking Code Maximum Recurrent Peak Reverse Voltage .070(1.78) .008(0.20) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 18 10 .003(0.08) 80 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 IFSM RΘJA Typical Thermal Resistance (Note 2) .083(2.10) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .110(2.80) Method 2026 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M @T A=125℃ IR .020(0.50) NOTES: .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .055(1.40) .035(0.89) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.9 0.5 0.92 10 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.D WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ A733 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (3) (1) (2) ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • HighA733 x Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. • (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of (3) CLASSIFICATION OF h FE RANK MIL-STD-19500 /228 Ordering Information: • RoHS product for packing code suffix "G" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM which may be included on WILLAS data sheets and/ or specifications can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH or indirectly cause injury or threaten a life without expressed written approval 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Ratedsuch applications do so at their own risk and shall agree to fully indemnify WILLAS DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.