WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. The MMBT3904DW1T1 device is a spin–off of our popular power loss, high efficiency. • Low SOT–23/SOT–323 three–leaded device.voltage It is designed for general low forward drop. • High current capability, purpose applications and is housed in the SOT–363 surge capability. • Highamplifier six–leaded surface package. By putting two discrete devices in for mount overvoltage protection. • Guardring Ultra high-speed switching. one •package, this device is ideal for low–power surface mount epitaxial planar chip, silicon junction. • Silicon where applications board space is metal at a premium. Lead-free parts meet environmental standards of • , 100–300 • hFEMIL-STD-19500 /228 • Low VCE(sat) , ≤for0.4 V code suffix "G" product packing • RoHS Halogen Circuit free product for packing code suffix "H" Design • Simplifies Mechanical data • Reduces Board Space : UL94-V0 rated flame retardant • EpoxyComponent Count • Reduces Case : Molded plastic, SOD-123H • • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel , • Terminals :Plated terminals, solderable per MIL-STD-750 Marking: MMBT3904DW1T1 = MA • Device 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 6 5 4 0.071(1.8) 0.056(1.4) 1 2 3 SOT-363 (3) (2) (1) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Q1 0.031(0.8) Typ. Q2 Method 2026 • Weight :0.005g • Polarity : Indicated by cathode band Dimensions in inches and (millimeters) Featrues • Mounting Position : Any (4) (5) (6) z RoHS product for packing code • Weight : Approximated 0.011suffix gram "G", Halogen free product for packing code suffix "H". Level 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS z Moisture Sensitivity MAXIMUM Ratings at 25℃RATINGS ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive Symbol load. Value Rating For capacitive load, derate current by 20% Collector–Emitter Voltage VCEO 40 RATINGS Collector–Base Voltage VCBO Marking Code Emitter–Base Voltage Maximum Recurrent Peak Reverse Voltage Collector Current – Continuous Maximum RMS Voltage VEBO IC Maximum DC Blocking Voltage Electrostatic Discharge ESD Maximum Average Forward Rectified Current THERMAL CHARACTERISTICS Peak Forward Surge Current 8.3 ms single half sine-wave Characteristic superimposed on rated load (JEDEC method) Symbol (1) 2) Typical Resistance (Note TotalThermal Package Dissipation T = 25°C Typical A Junction Capacitance (Note 1) PD Operating Temperature Thermal ResistanceRange Junction to RJA Storage Temperature Range Ambient Junction and Storage Temperature CHARACTERISTICS Range TJ, Tstg Marking Device Vdc Shipping SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 60 VRRM 12 6.0 20 VRMS 200 14 20 VDC HBM>16000, MM>2000 IO IFSM Vdc 13 Vdc 30 MA 3000 Units/Reel 10 115 120 100 150 200 18 80 28 35 42 56 70 105 140 40 50 60 80 100 150 200 RΘJA 150 CJ mW 1.0 30 40 120 833 -55 to +125 °C/W –55 to +150 °C TSTG MMBT3904DW1T1 15 16 50 60 30 V Unit TJ 14 40 mAdc 21 Max -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF 0.50 1. Device mounted on FR4 glassatepoxy printed circuit board using the minimum Maximum Average Reverse Current @T A=25℃ IR 1. recommended footprint. Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage ORDERING INFORMATION Unit @T A=125℃ 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNT Purpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) optimize board space. • Low power loss, high efficiency. Characteristic • High current capability, low forward voltage drop. OFF CHARACTERISTICS • High surge capability. (2) Collector–Emitter Voltageprotection. for overvoltage • GuardringBreakdown (IC =• 1.0 mAdc, IB = 0) switching. Ultra high-speed epitaxial planar chip, metal silicon junction. • Silicon Breakdown Collector–Base Voltage Lead-free (IC =• 10 Adc, IE parts = 0) meet environmental standards of 0.146(3.7) Symbol Min Max 0.130(3.3) V(BR)CEO V(BR)CBO MIL-STD-19500 /228 Emitter–Base product for Voltage packing code suffix "G" • RoHSBreakdown (IE = 10 Adc, Ifree 0) C = product Halogen for packing code suffix "H" V(BR)EBO Mechanical data Base Cutoff Current (VCE• = 30 Vdc, V = 3.0 Vdc)flame retardant EB Epoxy : UL94-V0 rated IBL Collector Cutoff: Molded Current plastic, SOD-123H • Case (VCE = 30 Vdc, VEB = 3.0 Vdc) , • Terminals :Plated terminals, solderable per MIL-STD-750 ICEX 0.031(0.8) Typ. 40 – 60 – 6.0 – – 50 – 50 Unit 0.012(0.3) Typ. Vdc 0.071(1.8) 0.056(1.4) Vdc Vdc nAdc 0.040(1.0) 0.024(0.6) nAdc 0.031(0.8) Typ. ON CHARACTERISTICS Method(2) 2026 DC Current Gain : Indicated by cathode band • Polarity (IC = 0.1 mAdc, VCE = 1.0 Vdc) Mounting Position : Any • (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC =• 10 mAdc,: Approximated VCE = 1.0 Vdc) 0.011 gram Weight (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 RATINGS Vdc) MAXIMUM AND ELECTRICAL Collector–Emitter Saturation Voltage unless otherwise specified. VCE(sat) Vdc Ratings at 25℃ ambient temperature (IC =phase 10 mAdc, IB = 1.0 mAdc) – 0.2 Single half wave, 60Hz, resistive of inductive load. (IC = 50 mAdc, IB = 5.0 mAdc) – 0.3 For capacitive load, derate current by 20% Base–Emitter Saturation Voltage VBE(sat) Vdc FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH RATINGS (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 Marking 12 13 14 15 16 – 18 0.95 10 115 120 (IC =Code 50 mAdc, IB = 5.0 mAdc) 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM SMALL–SIGNAL CHARACTERISTICS Maximum RMS Voltage Current–Gain – Bandwidth Maximum DC Blocking VoltageProduct (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) VRMS 14 21 28 VDC 20 30 40 IO Maximum Average Forward Rectified Current hFE Dimensions in inches and (millimeters) – 40 – 70 – 100 300 60 – 30 – CHARACTERISTICS Output Capacitance Vdc,Current IE = 0,8.3f =ms1.0 MHz) Peak(VForward Surge single half sine-wave CB = 5.0 superimposed on rated load (JEDEC method) Input Capacitance Typical Thermal Resistance 2) MHz) (VEB = 0.5 Vdc, IC = 0,(Note f = 1.0 Capacitance 1) Duty Cycle ≤2.0%.CJ 2.Typical PulseJunction Test: Pulse Width ≤ (Note 300 µs; Operating Temperature Range TJ Storage Temperature Range 42 60 Cobo IFSM RΘJA 35 50fT Cibo 300 1.0 – 30 70 80 40– 120 -55 to +125 56 – 100 105 MHz150 4.0 8.0 140 200 pF pF -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers 25°C unless otherwise noted) (Continued) ELECTRICAL CHARACTERISTICS better reverse leakage current(T and resistance. A =thermal application in order to • Low profile surface mounted Characteristic Symbol optimize board space. Input Impedance • Low power loss, high efficiency. (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) • High current capability, low forward voltage drop. • High surge capability. Voltage Feedback Ratio for overvoltage protection. • Guardring (VCE = 10 Vdc, IC = 1.0 switching. mAdc, f = 1.0 kHz) high-speed • Ultra • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free Small–Signal Current Gain (VCE MIL-STD-19500 = 10 Vdc, IC = 1.0/228 mAdc, f = 1.0 kHz) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Output Admittance Mechanical (VCE = 10 Vdc, IC = 1.0 data mAdc, f = 1.0 kHz) • Epoxy : UL94-V0 rated flame retardant SOD-123H Min Max hie 0.146(3.7) 0.130(3.3) 1.0 10 0.5 8.0 100 400 1.0 40 – 5.0 hre hfe hoe Noise •Figure Case : Molded plastic, SOD-123H , (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) • Terminals :Plated terminals, solderable per MIL-STD-750 NF 0.031(0.8) Typ. Unit kΩ 0.012(0.3) Typ. X 10–4 0.071(1.8) 0.056(1.4) – mhos 0.040(1.0) 0.024(0.6) dB 0.031(0.8) Typ. Method 2026 SWITCHING CHARACTERISTICS • Polarity : Indicated by cathode band Delay Time (VCC = 3.0 Vdc, VBE = –0.5 Vdc) : Any • Mounting Position Rise Time (I = 10 mAdc, C B1 = 1.0 mAdc) • Weight : Approximated 0.011 Igram Storage Time Dimensions in inches and (millimeters) (VCC = 3.0 Vdc, IC = 10 mAdc) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (I = I = 1.0 mAdc) Fall Time B1 B2 Ratings at 25℃ ambient temperature unless otherwise specified. – 35 tr – 35 ts – 200 tf – 50 ns ns Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% DUTY CYCLE Marking Code = 2% RATINGS 300 ns Maximum Recurrent Peak +10.9 Reverse V Voltage Maximum RMS Voltage Maximum DC Blocking Voltage -0.5 V 10 k FM1150-MH FM1200-M +3 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH +3 V t1 1012< t1 < 50013 s 14 15 16 18 10 115 120 +10.9 V DUTY 20 CYCLE 30= 2% 40 50 60 80 100 275 150 200 V275 RRM 14 21 28 35 42 56 70 105 140 VRMS 10 k 20 30 40 50 60 80 100 150 200 VDC 0 Maximum Average Forward Rectified Current < 1 ns Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IOC < 4 pF* s IFSM RΘJA Typical Thermal Resistance (Note 2) Operating Temperature Range Figure 1. Delay and Rise Time Storage Temperature Range Equivalent Test Circuit CHARACTERISTICS TJ 1.0 1N916 30 < 1 ns -55 to +125 TSTG 40 120 Cs < 4 pF* -55 to +150 Figure 2. Storage and Fall Time - 65 to +175 Equivalent Test Circuit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -9.1 V′ J * TotalCshunt capacitance of test jig and connectors Typical Junction Capacitance (Note 1) td @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline Features TYPICAL TRANSIENT CHARACTERISTICS • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. T = 25°C J TJ = 125°C optimize board space. 5000 • Low power loss, high efficiency. VCC = 40 V • High current capability, low forward voltage drop. 3000 IC/IB = 10 • High surge capability. 2000 • Guardring for overvoltage protection. • Ultra high-speed switching. 1000 • Silicon epitaxial planar chip, metal silicon junction. 700 Cibo standards of • Lead-free parts meet environmental 500 MIL-STD-19500 /228 300 • RoHS product for packing code suffix "G" 200 obo Halogen free product for C packing code suffix "H" SOD-123H • Low profile surface mounted application in order to CAPACITANCE (pF) 7.0 5.0 3.0 2.0 Mechanical data • Epoxy : UL94-V0 rated flame retardant 1.0 • Case : Molded plastic, SOD-123H 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 , • Terminals :Plated terminals, solderable per MIL-STD-750 100 70 50 300 200 MAXIMUM RATINGS AND ELECTRICAL RATINGS 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 2.0 3.0 1.0 40 V 12 20 VRRM 15 V 14 VRMS 2.0 V 20 VDC Maximum Recurrent Peak Reverse Voltage Maximum 10 RMS Voltage td @ VOB = 0 V 5 Average Forward Rectified Current Maximum 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70IO100 IC, COLLECTOR (mA) Peak Forward Surge Current 8.3 ms singleCURRENT half sine-wave IFSM superimposed on rated load (JEDEC Figure 5.method) Turn–On Time Typical Thermal Resistance (Note 2) Operating Temperature Range 300 200 Storage Temperature IC/IB = 20 Range IC/IB = 10 t s′ , STORAGE TIME (ns) 200 CHARACTERISTICS VF Maximum 50 Average Reverse Current at @T A=25℃ IC/IB = 20 Rated DC Blocking Voltage 30 20 NOTES: IR IC/IB = 10 @T A=125℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 15 50 16 60 18 80 10 100 115 150 120 200 21 10 307 5 28 35 42 56 70 105 140 40 50 60 80 100 150 200 1.0 2.0 3.0 5.0 7.0 10 1.0 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 30 200 Figure 6. Rise Time 40 120 500 -55 to +125 300 200 -55 toV+150 CC = 40 V IB1 = IB2 - 65 to +175 IC/IB = 20 100 0.50 70 50 20 30 50 70 100 200 0.70 IC/IB = 10 1.0 0.85 0.9 0.92 0.5 30 20 7 5 2012-06 2012-0 30 13 20 30 10 5.0 7.0 10 VCC = 40 V IC/IB = 10 50 7 5 2.0 3.0 200 100 70 10 2- Thermal Resistance From Junction to Ambient 1.0 50 70 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 100 Maximum Forward Voltage at 1.0A DC 70 0.031(0.8) Typ. 30 IC, COLLECTOR CURRENT (mA) RΘJA CJ t′sT=Jts - 1/8 tf IB1 = IB2 TSTG Typical 500 Junction Capacitance (Note 1) 20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum 7 DC Blocking Voltage 5.0 7.0 10 300 200 CHARACTERISTICS t f , FALL TIME (ns) 30 20 QT 500 IC/IB = 10 Ratings at 25℃ ambient temperature unless otherwise specified. 100 Single phase half wave, 60Hz, resistive of inductive load. tr @ VCC = 3.0 V 70 For capacitive load, derate current by 20% 50 TIME (ns) 0.071(1.8) 0.056(1.4) Dimensions in inches and (millimeters) Figure 4. Charge Data t r, RISE TIME (ns) Figureby 3. cathode Capacitance • Polarity : Indicated band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.012(0.3) Typ. QA REVERSE BIAS VOLTAGE (VOLTS) Method 2026 500 0.146(3.7) 0.130(3.3) Q, CHARGE (pC) 10 2.0 3.0 5.0 7.0 10 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Features TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS Package outline NOISE FIGURE VARIATIONS power dissipation offers • Batch process design, excellent (V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) A better reverse leakage current CE and thermal resistance. 12 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 optimize board space. = 1.0 mA loss, high efficiency. • LowIC power • High current capability, low forward voltage drop. RESISTANCE = 200 capability. • High surgeSOURCE IC = 0.5 mA • Guardring for overvoltage protection. • Ultra high-speed switching. SOURCE RESISTANCE = 1.0 k chip, • Silicon epitaxial planar IC = 50 A metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOURCE RESISTANCE = 500 Halogen free product forpacking code suffix "H" IMechanical C = 100 A data f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 • Low profile surface mounted application in order to IC = 1.0 mA 0.146(3.7) 0.130(3.3) IC = 0.5 mA 10 0.012(0.3) Typ. IC = 50 A 8 0.071(1.8) 0.056(1.4) IC = 100 A 6 4 2 40 100 : UL94-V0 retardant • Epoxy 0.2 0.4 1.0 rated 2.0 flame 4.0 10 20 FREQUENCY (kHz) SOD-123H • Case : Moldedf,plastic, , • Terminals :Plated solderable per MIL-STD-750 Figure terminals, 9. Noise Figure 0 0.1 0.2 0.4 1.0 2.0 4.0 10 0.040(1.0) 0.024(0.6)100 40 20 RS, SOURCE RESISTANCE (k OHMS) 0.031(0.8) Typ. 0.031(0.8) Typ. Figure 10. Noise Figure Method 2026 • Polarity : Indicated by cathode band h PARAMETERS • Mounting Position : Any (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) • Weight : Approximated 0.011 gram 300 SOD-123H Dimensions in inches and (millimeters) hoe, OUTPUT ADMITTANCE ( mhos) 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS 100 Maximum Recurrent Peak Reverse Voltage 70 VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO 5.0 IFSM 50 30 0.1 0.2 Current 0.3 0.5 1.0 half sine-wave 2.0 3.0 Peak Forward Surge 8.3 ms single I , COLLECTOR CURRENT (mA) C (JEDEC method) superimposed on rated load Typical Thermal Resistance (Note Figure 11.2)Current Gain CJ Operating Temperature Range TJ h ie , INPUT IMPEDANCE (k OHMS) Storage 10 Temperature Range Rated DC Blocking Voltage IR @T A=125℃ 1.0 NOTES: 0.5 2- Thermal Resistance From Junction to Ambient 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance 2012-06 2012-0 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 302 40 50 60 80 100 150 200 0.1 0.2 1.0 0.3 0.5 1.0 2.0 3.0 30 IC, COLLECTOR CURRENT (mA) 5.0 10 40 Admittance Figure 12. Output 120 -55 10 to +125 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 15 50 -55 to +150 - 65 to +175 7.0 5.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ 2.0 14 40 VF Maximum Forward Voltage at 1.0A DC 13 305 TSTG CHARACTERISTICS 5.0 20 1 10 RΘJA Typical Junction Capacitance (Note 1) 20 50 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH 10 Marking Code hre , VOLTAGE FEEDBACK RATIO (x 10 -4) h fe , CURRENT GAIN Ratings at 25℃ ambient temperature unless otherwise specified. 200 phase half wave, 60Hz, resistive of inductive load. Single For capacitive load, derate current by 20% 5.0 10 3.0 0.50 0.70 0.9 0.85 0.5 2.0 0.92 10 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 14. Voltage Feedback Ratio WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC offers CHARACTERISTICS power dissipation • Batch process design, excellent better reverse leakage current and thermal resistance. 2.0 SOD-123H • Low profile surface mounted application in order to TJ = +125°C optimize board space. 0.3 • Low power loss, high efficiency. +25°C drop. • High current capability, low forward voltage • High surge capability. • Guardring for overvoltage protection. -55°C • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.2 • RoHS product for packing code suffix "G" 1.0 0.7 0.5 VCE = 1.0 V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" 0.1 0.1 Mechanical data rated • Epoxy0.2: UL94-V0 0.3 0.5 flame 0.7 retardant 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderableFigure per MIL-STD-750 15. DC Current Gain 20 30 70 50 0.040(1.0) 0.024(0.6) 100 200 0.031(0.8) Typ. 0.031(0.8) Typ. VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Method 2026 1.0 0.8 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram IC = 1.0 mA TJ = 25°C 10 mA 30 mA 100 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.6 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For 0.4 capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code 0.2 12 20 13 30 14 40 15 50 14 21 28 35 42 56 0.7 200.3 300.5 40 1.0 50 VDC Maximum Average Forward Rectified Current IO IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 2.0 60 3.0 80 VRRM Maximum Recurrent Peak Reverse Voltage VRMS Maximum RMS Voltage 0 0.01 DC Blocking 0.02 Voltage 0.03 Maximum Dimensions in inches and (millimeters) 0.05 0.07 0.1 16 60 0.2 TJ VBE(sat) @ IC/IBTSTG =10 CHARACTERISTICS 0.8 Maximum Average Reverse Current at @T A=25℃ 0.6 IR @T A=125℃ Rated DC Blocking Voltage 0.4 NOTES: VCE(sat) @ IC/IB =10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0 1.0 2.0 2012-06 2012-0 5.0 10 20 140 200 -55 to +150 - 65 to +175 +25°C TO +125°C VC FOR VCE(sat) 50 100 0.50 200 -55°C TO +25°C 0.85 0.70 0.9 0.5 -0.5 0.92 10 -55°C TO +25°C -1.0 +25°C TO +125°C VB FOR VBE(sat) -1.5 0.2 105 10 150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 0 F VBE @ VCEV=1.0 V Maximum Forward Voltage at 1.0A DC 120 200 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) Storage Temperature Range 1.0 70 5.0 100 7.0 115 150 40 120 1.0 -55 to +125 CJ TJ =Temperature 25°C Operating Range RΘJA Typical Junction Capacitance (Note 1) 1.2 10 100 1.0 30 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 18 80 -2.0 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 180 200 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-363 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .071(1.80) .054(1.35) .045(1.15) 0.071(1.8) 0.056(1.4) .004(0.10)MIN. MIL-STD-19500 /228 .087(2.20) • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .096(2.45) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .071(1.80) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .030(0.75) .021(0.55) RATINGS Marking Code .010(0.25) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M .056(1.40) .047(1.20) Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave .004(0.10)MAX. superimposed on rated load (JEDEC method) RΘJA CJ Operating Temperature Range TJ -55 to +125 TSTG Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC -55 to +150 - 65 to +175 .016(0.40) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 0.92 VF 0.50 0.70 0.85 .004(0.10) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 40 120 Typical Junction Capacitance (Note 1) .043(1.10) .032(0.80) Typical Thermal Resistance (Note 2) 1.0 30 @T A=125℃ IR 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3904DW1T1 THRU Dual General Purpose Transistor 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) voltage drop. • High current capability, low forward (1) MMBT3904DW1T1 G ‐WS Tape&Reel: 3 Kpcs/Reel surge capability. • High Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 TypicalWILLAS products are not designed, intended or authorized for use in medical, Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storageapplications where a failure or malfunction of component or circuitry may directly Temperature Range TSTG or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures . NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.