UT54ACS109

Standard Products
UT54ACS109/UT54ACTS109
Dual J-K Flip-Flops
Datasheet
November 2010
www.aeroflex.com/logic
FEATURES
‰ 1.2μ CMOS
- Latchup immune
‰ High speed
‰ Low power consumption
‰ Single 5 volt supply
‰ Available QML Q or V processes
‰ Flexible package
- 16-pin DIP
- 16-lead flatpack
‰ UT54ACS109 - SMD 5962-96540
‰ UT54ACTS109 - SMD 5962-96541
PINOUTS
16-Pin DIP
Top View
CLR1
1
16
VDD
CLR2
J
2
15
K1
3
14
J2
CLK1
PRE1
4
5
13
12
K2
Q1
Q1
VSS
6
7
8
11
10
9
PRE2
Q2
Q2
CLK2
DESCRIPTION
16-Lead Flatpack
Top View
The UT54ACS109 and the UT54ACTS109 are dual J-K positive
triggered flip-flops. A low level at the preset or clear inputs sets
or resets the outputs regardless of the other input levels. When
preset and clear are inactive (high), data at the J and K input
meeting the setup time requirements are transferred to the outputs on the positive-going edge of the clock pulse. Following
the hold time interval, data at the J and K input can be changed
without affecting the levels at the outputs. The flip-flops can
perform as toggle flip-flops by grounding K and tying J high.
They also can perform as D flip-flops if J and K are tied together.
CLR1
1
16
VDD
J1
2
15
CLR2
K1
3
14
J2
CLK1
PRE1
4
5
13
12
K2
Q1
6
11
PRE2
Q1
7
8
10
9
Q2
VSS
CLK2
Q2
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
LOGIC SYMBOL
INPUTS
OUTPUT
PRE
CLR
CLK
J
K
Q
Q
L
H
X
X
X
H
L
H
L
X
X
X
L
H
L
L
X
X
X
H
1
H
1
H
H
↑
L
L
H
H
↑
H
L
Toggle
H
H
↑
L
H
No Change
H
H
↑
H
H
H
H
L
X
X
L
PRE1
J1
CLK1
K1
CLR1
PRE2
H
H
J2
CLK2
S
J1
C1
K1
R
(6)
(7)
Q1
Q1
(11)
(14)
(10)
Q2
(12)
(13)
K2
(15)
CLR2
L
(9)
Q2
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
No Change
Note:
1. The output levels in this configuration are not guaranteed to meet the minimum
levels for VOH if the lows at preset and clear are near VIL maximum. In
addition, this configuration is nonstable; that is, it will not persist when either
preset or clear returns to its inactive (high) level.
(5)
(2)
(4)
(3)
(1)
1
LOGIC DIAGRAM
PRE
Q
CLK
J
Q
K
CLR
2
OPERATIONAL ENVIRONMENT1
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6 (ACTS109)
5.0E5 (ACS109)
rads(Si)
SEU Threshold 2
80
MeV-cm2/mg
SEL Threshold
120
MeV-cm2/mg
Neutron Fluence
1.0E14
n/cm2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
-0.3 to 7.0
V
VI/O
Voltage any pin
-.3 to VDD +.3
V
TSTG
Storage Temperature range
-65 to +150
°C
TJ
Maximum junction temperature
+175
°C
TLS
Lead temperature (soldering 5 seconds)
+300
°C
ΘJC
Thermal resistance junction to case
20
°C/W
II
DC input current
±10
mA
PD
Maximum power dissipation
1
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
4.5 to 5.5
V
VIN
Input voltage any pin
0 to VDD
V
TC
Temperature range
-55 to + 125
°C
3
DC ELECTRICAL CHARACTERISTICS 7
(VDD = 5.0V ±10%; VSS = 0V 6, -55°C < TC < +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
VIL
VIH
IIN
PARAMETER
CONDITION
MIN
Low-level input voltage 1
ACTS
ACS
High-level input voltage 1
ACTS
ACS
MAX
UNIT
0.8
.3VDD
V
.5VDD
.7VDD
V
Input leakage current
ACTS/ACS
VIN = VDD or VSS
Low-level output voltage 3
ACTS
ACS
IOL = 8.0mA
IOL = 100μA
High-level output voltage 3
ACTS
ACS
IOH = -8.0mA
IOH = -100μA
Short-circuit output current 2 ,4
ACTS/ACS
VO = VDD and VSS
-200
Output current10
VIN = VDD or VSS
8
mA
(Sink)
VOL = 0.4V
Output current10
VIN = VDD or VSS
-8
mA
(Source)
VOH = VDD - 0.4V
Ptotal
Power dissipation 2, 8,9
CL = 50pF
2.0
mW/
MHz
IDDQ
Quiescent Supply Current
VDD = 5.5V
10
μA
Quiescent Supply Current Delta
For input under test
1.6
mA
VOL
VOH
IOS
IOL
IOH
ΔIDDQ
ACTS
-1
1
μA
0.40
0.25
V
.7VDD
VDD - 0.25
V
200
mA
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or VSS
VDD = 5.5V
CIN
COUT
Input capacitance 5
ƒ = 1MHz @ 0V
15
pF
Output capacitance 5
ƒ = 1MHz @ 0V
15
pF
4
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%, 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density ≤ 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All ACTS specifications are valid for radiation dose <1E6 rads(Si), and all ACS specifications are valid for radiation dose <5E5 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
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AC ELECTRICAL CHARACTERISTICS 2
(VDD = 5.0V ±10%; VSS = 0V 1, -55°C < TC < +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
tPHL
CLK to Q, Q
5
27
ns
tPLH
CLK to Q, Q
4
23
ns
tPLH
PRE to Q
1
16
ns
tPHL
PRE to Q
1
19
ns
tPHL
CLR to Q
2
19
ns
tPLH
CLR to Q
2
16
ns
fMAX
Maximum clock frequency
62
MHz
tSU1
PRE or CLR inactive
Setup time before CLK ↑
5
ns
tSU2
Data setup time before CLK↑
5
ns
tH3
Data hold time after CLK ↑
3
ns
tW
Minimum pulse width
PRE or CLR low
CLK high
CLK low
8
ns
Notes:
1. Maximum allowable relative shift equals 50mV.
2. For the ACTS version, all specifications are valid for radiation dose <1E6 rads(Si). For the ACS version, all specifications are valid for radiation dose <5E5 rads(Si).
3. Based on characterization, hold time (tH) of 0ns can be assumed if data setup time (tSU2) is >10ns. This is guaranteed, but not tested.
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PACKAGING
Side-Brazed Packages
7
FLATPACK PACKAGES
8
UT54ACS109/UT54ACTS109: SMD
5962 * ***** ** * * *
Lead Finish: (Notes 1 & 2)
A = Solder
C = Gold
X = Optional
Package Type:
X = 16-lead ceramic bottom-brazed dual-in-line Flatpack
C = 16-lead ceramic side-brazed dip
Class Designator:
Q = QML Class Q
V = QML Class V
Device Type:
01
Drawing Number:
96540 = UT54ACS109
96541 = UT54ACTS109
Total Dose: (Notes 3 & 4)
R = 1E5 rads(Si)
F = 3E5 rads(Si)
G = 5E5 rads(Si)
H = 1E6 rads(Si)
Notes:
1. Lead finish (A,C, or X) must be specified.
2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. For prototype inquiries, contact factory.
4. Device type 02 is only offered with a TID tolerance guarantee of 3E5 rads(Si) or 1E6 rads(Si) and is tested in accordance with MIL-STD-883 Test Method 1019
Condition A and section 3.11.2. Device type 03 is only offered with a TID tolerance guarantee of 1E5 rads(Si), 3E5 rads(Si), and 5E5 rads(Si), and is tested in
accordance with MIL-STD-883 Test Method 1019 Condition A.
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Aeroflex Colorado Springs - Datasheet Definition
Advanced Datasheet - Product In Development
Preliminary Datasheet - Shipping Prototype
Datasheet - Shipping QML & Reduced Hi-Rel
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