REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHEET REV SHEET 15 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Steve L.Duncan STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 1 2 3 4 5 DRAWING APPROVAL DATE 13-03-26 REVISION LEVEL 7 9 10 11 12 13 MICROCIRCUIT, CMOS, OPERATIONAL AMPLIFIER, QUAD, MONOLITHIC SILICON SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 8 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil/ CHECKED BY Greg Cecil APPROVED BY Charles F. Saffle 6 5962-10241 1 OF 15 5962-E334-12 14 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 H Federal stock class designator \ RHA designator (see 1.2.1) 10241 01 K X X Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 01 02 03 Generic number RHD5900 RHD5901 RHD5902 Circuit function Quad operational amplifier Quad operational amplifier, Hi-Z output control Quad operational amplifier, High speed, Hi-Z output control 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 2 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator X See figure 1 Terminals Package style 16 Flat package with formed leads 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) ............................................................................. Input voltage (VIN) range ....................................................................... Junction temperature (TJ) ..................................................................... Power @ +25°C .................................................................................... Thermal resistance, Junction to Case (ӨJC) .......................................... Storage temperature range ................................................................... Lead temperature (soldering, 10 seconds) ........................................... +7.0 V dc VCC +0.4 V, VEE -0.4 V +150°C 200 mW 7° C/W -65°C to +150°C +300°C 1.4 Recommended operating conditions. Supply voltage (VCC) range .................................................................... Input Common Mode (VCM) range .......................................................... Case operating temperature range (TC) ................................................. +3.0 V dc to +5.5 V dc VCC to VEE -55°C to +125°C 1.5 Radiation features. 2/ Maximum Total Ionizing Dose (TID) ..(dose rate = 50 - 300 rad(Si)/s): In accordance with MIL-STD-883, method 1019, condition A............ Enhanced Low Dose Rate Sensitvity (ELDRS)..................................... Single Event Phenomenon (SEP) effective linear energy transfer (LET): No Single Event Latchup (SEL) ......................................................... Single Event Transient (SET) ............................................................ 14 2 Neutron Displacement Damage (> 1 x 10 neutrons/cm ) ................... 1 Mrad(Si) 3/ ≤ 100 MeV-cm /mg 4/ 5/ ≤ 59 MeV-cm2/mg 4/ 5/ 3/ 2 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. _________ 1/ 2/ 3/ 4/ 5/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. See section 4.3.5 for the manufacturer's radiation hardness assurance analysis and testing. Not tested, Immune by 100 percent CMOS technology. 2 2 Single event testing performed at 100 Mev-cm /mg with no latch-up and up to 59 Mev-cm /mg with single event transients (voltage) limited as specified in Table IB. See table IB. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 3 (Copies of these documents are available online at https://assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online at http://www.astm.org or from the American Society for Testing and Materials, P O Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as designated in the device manufacturer's Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and and as specified on figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Logic diagram(s). The logic diagram(s) shall be as specified on figure 3. 3.2.4 Switching diagram(s). The switching diagram(s) shall be as specified on figure 4. 3.2.5 Radiation exposure circuits. The radiation exposure circuits shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table IA and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table IA. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DLA Land and Maritime -VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime -VA shall affirm that the manufacturer's product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 4 TABLE IA. Electrical performance characteristics. Test Input offset voltage 1/ Symbol Conditions -55°C ≤ TC ≤ +125°C VCC = +5.0 V, VEE = GND unless otherwise specified VOS Group A Device subgroups types 1,2,3 Limits Unit Min Max 01,02 -3 3 03 -4 4 mV Input offset current 1/ IOS 1,2,3 All -100 100 pA Input bias current 1/ IB 1,3 All -100 100 pA -1 1 nA 2 Common Mode Rejection Ratio CMRR 4,5,6 01,02 70 03 60 4,5,6 All 70 dB 4.90 V Power supply rejection ratio PSRR Output voltage high VOH ROUT = 3.6 kΩ to GND 1,2,3 All Output voltage low VOL ROUT = 3.6 kΩ to VCC 1,2,3 All Short circuit output current 2/ IO(SINK) VOUT to VCC 1,2,3 01,02 IO(SOURCE) Slew rate 1/ SR VOUT to VEE RL = 8 kΩ, Gain = +1 9,10,11 dB 0.1 V -30 -75 mA 03 -130 -290 01,02 45 55 03 110 210 01,02 2.0 03 12.0 V/µs Open loop gain 1/ AOL RL = 100 kΩ 4,5,6 All 90 dB Unity gain bandwidth 1/ UGBW RL = 10 kΩ 4,5,6 01,02 4 MHz 03 23 Quiescent supply current 1/ ICCQ All amplifiers enabled, no loads 1,2,3 All amplifiers disabled All 5.5 mA 02,03 300 nA Channel separation 2/ CHSEP RL = 2 kΩ, f = 1.0 kHz 4,5,6 All 84 dB Enable input voltage high 2/ VHI HI = enabled 1,2,3 02,03 3.5 V Enable input voltage low 2/ VLO LO = disabled 1,2,3 02,03 1.5 V Enable input current 2/ IEN 1,2,3 02,03 10 nA Output enable delay 2/ tONEN 9,10,11 02,03 500 ns Output disable delay 2/ tOFFEN 9,10,11 02,03 100 ns 1/ 2/ See figure 4 These devices have been tested to (2 Mrad(Si)) to Method 1019, condition A of MIL-STD-883 at +25°C for these parameters to assure the requirements of RHA designator level "H” (1Mrad(Si)) are met. Not tested. Shall be guaranteed by design, characterization, or correlation to other test parameters. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 5 TABLE IB. SEP test limits. 1/ Device types 01,02,03 SEP 01,02,03 SET (transient voltage) SEL Temperature (TC) +125°C +25°C Conditions Results VCC = +5.5 V and VEE = +0 V VCC = +2.75 V and VEE = -2.75 V VCC = +5.0 V and VEE = +0 V No SEL No SEL Maximum voltage 240 mV Maximum duration 3.5 µS Maximum voltage 240 mV Maximum duration 4.0 µS VCC = +2.5 V and VEE = -2.5 V Effective linear energy transfer (LET) 2 < 100 MeV-cm /mg 2 < 59 MeV-cm /mg 1/ For SEP test conditions, see 4.3.5.1.2.2 herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 6 Case X Symbol Inches Min A A1 A2 A3 b c D e e1 E E1 E2 Max .105 .030 REF .017 .027 .012 .015 .019 .007 .009 .417 .050 BSC .350 BSC .300 .394 .419 .346 REF Millimeters Min Max 2.68 0.76 REF 0.43 0.69 0.30 0.38 0.48 0.18 0.23 10.59 1.27 BSC 8.90 BSC 7.62 10.01 10.64 8.79 REF NOTE: 1. Location of the pin 1 marking. The ESD symbol may be used as the pin 1 marking. 2. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound units shall rule. 3. Package and lid are electrically isolated from signal pads. FIGURE 1. Case outline. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 7 Device types 01 02 and 03 Case outline X Terminal number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Terminal symbol OUT_A -IN_A +IN_A VCC +IN_B -IN_B OUT_B NC_GND (See note 1) NC_GND (See note 1) OUT_C -IN_C +IN_C VEE +IN_D -IN_D OUT_D OUT_A -IN_A +IN_A VCC +IN_B -IN_B OUT_B EN_AB (See note 2) EN_CD (See note 2) OUT_C -IN_C +IN_C VEE +IN_D -IN_D OUT_D NOTE: 1. NC_GND (pins 8 and 9) should be grounded to eliminate or minimize electrostatic discharge (ESD) or static buildup. 2. EN_AB enables amplifiers A and B, EN_CD enables amplifiers C and D. FIGURE 2. Terminal connections. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 8 FIGURE 3. Logic diagram(s). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 9 FIGURE 4. Switching diagrams. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 10 TABLE II. Electrical test requirements. MIL-PRF-38534 test requirements Subgroups (in accordance with MIL-PRF-38534, group A test table) Interim electrical parameters 1,4,9 Final electrical parameters 1*2,3,4,5,6,9,10,11 Group A test requirements 1,2,3,4,5,6,9,10,11 Group C end-point electrical parameters 1,2,3,4,5,6,9,10,11 End-point electrical parameters for Radiation Hardness Assurance (RHA) devices 1,4,9 * PDA applies to subgroup 1. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. b. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DLA Land and Maritime -VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA as specified in accordance with table I of method 1015 of MIL-STD-883. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. 4.3 Conformance and periodic inspections. Conformance inspection (CI) and periodic inspection (PI) shall be in accordance with MIL-PRF-38534 and as specified herein. 4.3.1 Group A inspection (CI). Group A inspection shall be in accordance with MIL-PRF-38534 and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 7, 8A , and 8B shall be omitted. 4.3.2 Group B inspection (PI). Group B inspection shall be in accordance with MIL-PRF-38534. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 11 4.3.3 Group C inspection (PI). Group C inspection shall be in accordance with MIL-PRF-38534 and as follows: a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life test, method 1005 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DLA Land and Maritime -VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. (2) TA as specified in accordance with table I of method 1005 of MIL-STD-883. (3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.3.4 Group D inspection (PI). Group D inspection shall be in accordance with MIL-PRF-38534. 4.3.5. Radiation hardness assurance (RHA). RHA qualification is required only for those devices with the RHA designator as specified herein. See table IIIA and table IIIB. Table IIIA. Radiation Hardness Assurance Method Table. RHA method employed NOTES: X = G = (N) = N/A = Testing at 2X rated total dose of (1 Mrad) Element Level Hybrid Device Level Yes Yes (See 4.3.5.1.1) Worst Case Analysis Performed No End point electricals after total dose Includes Combines Combines End-of-life temperature temperature total dose effects and and radiation displacement effects effects Element Level Hybrid device level TC = +25°C TC = +25°C N/A N/A N/A N/A Yes Yes Radiation testing done (Level) Guaranteed by design or process Not yet tested Not applicable for this SMD Table IIIB. Hybrid level and element level test table. Total Dose Low Dose Rate High Dose Rate (LDR) (HDR) CMOS IC NOTES: X = G = (N) = N/A = G X (2 Mrad) (See 4.3.5.1.1) ELDRS G Radiation Test Heavy Ion SET SEL (transient) (latch-up) X 59 MeV2 cm /mg X 100 MeV2 cm /mg Proton Low High Energy Energy (N) (N) SEE (upset) Neutron Displacement Damage (DD) (N) G Radiation testing done (Level) Guaranteed by design or process Not yet tested Not applicable for this SMD STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 12 4.3.5.1 Radiation Hardness Assurance (RHA) inspection. RHA qualification is required for those devices with the RHA designator as specified herein. End-point electrical parameters for radiation hardness assurance (RHA) devices shall be specified in table II. Radiation testing will be in accordance with the qualifying activity (DLA Land and Maritime -VQ) approved plan and with MIL-PRF-38534, Appendix G. a. The hybrid device manufacturer shall establish procedures controlling component radiation testing, and shall establish radiation test plans used to implement component lot qualification during procurement. Test plans and test reports shall be filed and controlled in accordance with the manufacturer's configuration management system. b. The hybrid device manufacturer shall designate a RHA program manager to oversee component lot qualification, and to monitor design changes for continued compliance to RHA requirements. 4.3.5.1.1 Hybrid level RHA qualification. Hybrid level and element level testing are the same for the devices on this Standard Microcircuit Drawing (SMD) since the active element is accessible to the device leads for test. 4.3.5.1.1.1 Qualification by similarity. The devices on this (SMD) are considered similar for the purpose of RHA testing. Device type 5962H1024102KXC was RHA tested, therefore the other device types on this SMD are qualified by similarity. 4.3.5.1.2 Element level qualification. 4.3.5.1.2.1 Total ionizing dose irradiation testing. A minimum of 5 biased devices of the active element used will be tested every wafer lot. These active element will be tested at HDR in accordance with condition A of method 1019 of MIL-STD-883 to 2 Mrad(Si) to assure 1 Mrad(Si) for the device parameters as specified in table IA herein. 4.3.5.1.2.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.3.5.1.2.2 Single Event Phenomena (SEP). A minimum of one representative hybrid from this SMD shall be characterized for SEL and SET responses at initial qualification and after any design or process change which may affect the RHA response of the devices on this SMD. Testing shall be performed in accordance with ASTM F1192. Test conditions are as follows: a. The ion beam angles of incidence for SEL shall be normal and 55 degrees to the die surface and for SET shall be normal. No shadowing of the ion beam due to fixturing is allowed. b. The fluence shall be ≥ 1x10 particles/cm . c. The flux shall be between 10 and 10 ions/cm /s. d. The particle range shall be ≥ 60 micron in silicon. e. The transient test temperature shall be +25° ±10°C and the latchup test temperature shall be +125°C ±10°C. f. For SEP test limits, see table IB herein. 7 2 2 5 2 4.3.5.2 RHA Lot Acceptance. Each wafer lot of the active element shall be evaluated for acceptance in accordance with MILPRF-38534 and herein. 4.3.5.2.1 Total Ionizing Dose (TID). See paragraph 4.3.5.1.2.1 and 4.3.5.1.2.1.1 herein. 4.3.5.2.2 Enhanced Element Evaluation. Enhanced Element Evaluation per Table IV herein including 45 devices subjected to Group C2, 1000 hours life testing, is required only for those devices with the RHA designator as specified herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 13 Table IV. Enhanced Element Evaluation For Microcircuit Die. Subgroup 2 Class K X Test MIL-STD-883 Method Condition 2010 1 3 4 X X X Element visual Assembled into package as specified in 1.2.4 herein. Element electrical Internal visual Temperature cycling X Constant acceleration 2001 X Burn-in 1015 X X Interim electrical Burn-in 1015 X X Post burn-in Final Electrical, Group A Steady-state life 1005 5 X X Final electrical Wire bond evaluation 3/ 2011 6 X SEM 2018 2017 1010 C Quantity (accept number) 100 percent 100 percent Reference Paragraph 1/ C.3.3.2 100 percent 100 percent C.3.3.1 C.5.5 C.3.3.3 100 percent 3000g’s, Y1 direction 160 hours minimum at +125°C C.5.6 C.3.3.4.3 160 hours minimum at +125°C C.5.10 1000 hours minimum at +125°C 45(0) 2/ 10(0) wires or 20(1) wires See method 2018 of MIL-STD-883 C.3.3.4.3 C.3.3.3 C.3.3.5 C.3.3.6 1/ See MIL-PRF-38534. 2/ Die shall be traceable to the wafer and wafer lot. The sample size shall consist of a minimum of 3 die from each wafer and a minimum of 45 die from each wafer lot. 3/ The devices herein is manufactured with aluminum wires and aluminum bond sites on the IC. No bimetallic bonds. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38534. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing. 6.3 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated as specified in MIL-PRF38534. 6.4 Record of users. Military and industrial users shall inform DLA Land and Maritime when a system application requires configuration control and the applicable SMD to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 14 6.5 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990, or telephone (614) 692-1081. 6.6 Sources of supply. Sources of supply are listed in MIL-HDBK-103 and QML-38534. The vendors listed in MIL-HDBK-103 and QML-38534 have submitted a certificate of compliance (see 3.7 herein) to DLA Land and Maritime-VA and have agreed to this drawing. 6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from the device manufacturer. a. RHA upset levels. b. Test conditions (SEP). c. Number of transients (SEP). d. Occurance of latchup (SEP). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-10241 A REVISION LEVEL SHEET 15 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 13-03-26 Approved sources of supply for SMD 5962-10241 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38534 during the next revisions. MIL-HDBK-103 and QML-38534 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information bulletin is superseded by the next dated revisions of MIL-HDBK-103 and QML-38534. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962-1024101KXA 5962H1024101KXA 5962-1024101KXC 5962H1024101KXC 88379 88379 88379 88379 RHD5900-201-2S RHD5900-901-2S RHD5900-201-1S RHD5900-901-1S 5962-1024102KXA 5962H1024102KXA 5962-1024102KXC 5962H1024102KXC 88379 88379 88379 88379 RHD5901-201-2S RHD5901-901-2S RHD5901-201-1S RHD5901-901-1S 5962-1024103KXA 5962H1024103KXA 5962-1024103KXC 5962H1024103KXC 88379 88379 88379 88379 RHD5902-201-2S RHD5902-901-2S RHD5902-201-1S RHD5902-901-1S 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the Vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 88379 Vendor name and address Aeroflex Plainview Incorporated, (Aeroflex Microelectronic Solutions) 35 South Service Road Plainview, NY 11803-4193 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.