RHD5958 5962-1221101

REVISIONS
LTR
DESCRIPTION
A
DATE (YR-MO-DA)
APPROVED
16-05-23
Charles F. Saffle
Paragraph 1.3: Made corrections. Table I: Made corrections
throughout to accurately reflect how the part is tested and to
incorporate RHA limits. Figure 4: Made corrections. Editorial
changes throughout. -sld
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PMIC N/A
PREPARED BY
Steve L. Duncan
STANDARD MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
CHECKED BY
Greg Cecil
http://www.landandmaritime.dla.mil/
APPROVED BY
Charles F. Saffle
DRAWING APPROVAL DATE
14-02-06
REVISION LEVEL
A
MICROCIRCUIT, CMOS, ANALOG TO DIGITAL
CONVERTER, 14-BIT, 8 CHANNEL
MULTIPLEXED, MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-12211
1 OF
16
5962-E362-16
1. SCOPE
1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A
choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When
available, a choice of radiation hardness assurance levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
12211
01
K
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices meet the MIL-PRF-38534 specified RHA levels
and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
Circuit function
RHD5958
A/D converter, 14-bit, 8 channel
multiplexed
1.2.3 Device class designator. This device class designator is a single letter identifying the product assurance level. All
levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and
E) or QML Listing (Class G and D). The product assurance levels are as follows:
Device class
Device performance documentation
K
Highest reliability class available. This level is intended for use in space
applications.
H
Standard military quality class level. This level is intended for use in applications
where non-space high reliability devices are required.
G
Reduced testing version of the standard military quality class. This level uses the
Class H screening and In-Process Inspections with a possible limited temperature
range, manufacturer specified incoming flow, and the manufacturer guarantees (but
may not test) periodic and conformance inspections (Group A, B, C and D).
E
Designates devices which are based upon one of the other classes (K, H, or G)
with exception(s) taken to the requirements of that class. These exception(s) must
be specified in the device acquisition document; therefore the acquisition document
should be reviewed to ensure that the exception(s) taken will not adversely affect
system performance.
D
Manufacturer specified quality class. Quality level is defined by the manufacturers
internal, QML certified flow. This product may have a limited temperature range.
STANDARD
MICROCIRCUIT DRAWING
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A
REVISION LEVEL
A
SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
X
See figure 1
Terminals
Package style
40
Ceramic quad flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38534.
1.3 Absolute maximum ratings. 1/
Supply voltages ....................................................................................
Clock frequency ....................................................................................
Input voltage (PREF, NREF).................................................................
Thermal resistance, junction-to-case (ƟJC) ...........................................
Storage temperature range ...................................................................
Lead temperature (soldering, 10 seconds) ...........................................
Junction temperature (TJ) .....................................................................
Power dissipation (PD) ..........................................................................
Case operating temperature range (TC) ................................................
+7.0 V dc
1.5 MHz
VCC + 0.4 V, GND - 0.4 V
+2.0° C/W
-65°C to +150°C
+300°C
+150°C
130 mW
-55°C to +125°C
1.4 Recommended operating conditions.
Analog power supply voltage (AVCC) ......................................................
Digital power supply voltage (DVCC) .......................................................
Digital output high reference level range (DRVP) ...................................
Digital output low reference level (DRVN) ..............................................
High analog reference voltage (PREF)...................................................
Low analog reference voltage (NREF) ...................................................
+5.0 V
+5.0 V
+3.3 V to +5.0 V
0V
+4.5 V
+0.5 V
1.5 Radiation features. 2/
Maximum Total Ionizing Dose (TID) ..(dose rate = 50 - 300 rad(Si)/s):
In accordance with MIL-STD-883, method 1019, condition A............
Enhanced Low Dose Rate Sensitvity (ELDRS).....................................
Single Event Latchup (SEL) ..................................................................
14
2
Neutron Displacement Damage (> 1 x 10 neutrons/cm ) ...................
100 krad(Si) 3/
4/
2
> 100 MeV-cm /mg 5/
4/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38534 - Hybrid Microcircuits, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines.
_________
1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ See section 4.3.5 for the manufacturer's radiation hardness assurance analysis and testing.
3/ The device will be tested every wafer diffusion lot.
4/ Not tested, Immune by 100 percent CMOS technology.
5/ Single Event Latchup (SEL) immunity is accomplished by double, fully enclosing, guard rings in the CMOS design layout.
The guard rings eliminate the parasitic pnpn structure that is responsible for latchup in CMOS circuits. This limit is
guaranteed by design or process, but not tested.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
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DSCC FORM 2234
APR 97
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A
REVISION LEVEL
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DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in
accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as
designated in the device manufacturer's Quality Management (QM) plan or as designated for the applicable device class. The
manufacturer may eliminate, modify, or optimize the tests and inspections herein, however, the performance requirements as
defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not
affect the form, fit, or function of the device for the applicable device class.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38534 and herein.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3.
3.2.4 Block diagram. The block diagram shall be as specified on figure 4.
3.2.5 Radiation exposure circuits. The radiation exposure circuits shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full specified operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with
the PIN listed in 1.2 herein. In addition, the manufacturer's vendor similar PIN may also be marked.
3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described
herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample,
for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those
which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be
made available to the preparing activity (DLA Land and Maritime -VA) upon request.
3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this
drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime -VA shall affirm that the
manufacturer's product meets the performance requirements of MIL-PRF-38534 and herein.
3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of
microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
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DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
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SHEET
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TABLE I. Electrical performance characteristics.
Test
Symbol
Digital supply current sleep 1/
DICCS
Conditions
AVCC = +5.0 V, DVCC = +5.0 V,
DRVP = +5.0 V
-55°C ≤ TC ≤ +125°C
unless otherwise specified
VEN = DGND, VOE = DGND
Group A Device
subgroups type
1,2,3
01
1
mA
Digital supply current active 1/
DICCA
VEN = DVCC, VOE = DVCC
1,2,3
01
2
mA
Digital supply current quiescent 1/
DICCQ
VEN = DVCC, CLK = DGND,
VOE = DVCC
1,2,3
01
1
mA
Analog supply current sleep 1/
AICCS
VEN = DGND, VOE = DGND
1,2,3
01
4
mA
Analog supply current active 1/
AICCA
VEN = DVCC, VOE = DVCC
1,2,3
01
10
mA
Analog supply current 1/
quiescent
AICCQ
VEN = DVCC, CLK = DGND,
VOE = DVCC
1,2,3
01
10
mA
Digital output supply current 1/
sleep
IDRVPS
VEN = DVCC, CL = 50 pF,
VOE = DGND
1,2,3
01
1
mA
Digital output supply current 1/
active
IDRVPA
VEN = DVCC, CL = 50 pF,
VOE = DVCC
1,2,3
01
1
mA
Digital output supply current 1/
quiescent
IDRVPQ
VEN = DVCC, CL = 50 pF,
CLK = DGND, VOE = DVCC
1,2,3
01
0.10
mA
Full-scale input range 1/
VIN
1,2,3
01
VPREF
V
Input capacitance 2/
CIN
TC = +25°C
1
01
50
pF
Analog reference impedance 1/
ZREF
PREF to NREF
1,2,3
01
2
6
kΩ
High analog reference voltage
VPREF
DRVP = 5.0 V 1/
1,2,3
01
VNREF
+5.0
V
VNREF
+5.0
0
VPREF
0
VPREF
DRVP = 3.3 V 2/
Low analog reference voltage
VNREF
DRVP = 5.0 V 1/
1,2,3
01
DRVP = 3.3 V 2/
Limits
Min
VNREF
Unit
Max
V
Integral non-linearity 1/
INL
PREF-NREF = 4.0 V
4,5,6
01
-48
48
LSBs
Differential non-linearity 1/
DNL
PREF-NREF = 4.0 V
4,5,6
01
-8.2
8.2
LSBs
DC offset 1/
VOS
PREF-NREF = 4.0 V
4,5,6
01
-1
1
%FSR
DC gain 1/
AE
PREF-NREF = 4.0 V
4,5,6
01
-2
2
%FSR
Channel isolation 2/
ISO
TC = +25°C
4
01
80
Clock frequency 1/
fC
PREF-NREF = 5.0 V
4,5,6
01
1
MHz
Maximum sampling rate 2/
fSAMPLE
fC = 1 MHz
4,5,6
01
50
kSPS
Digital high level input voltage
EN_H, STCNV_H, OE_H, CLK
(AD00 - AD02)
VIH
DRVP = 5.0 V 1/
1,2,3
01
Digital low level input voltage
EN_H, STCNV_H, OE_H, CLK
(AD00 - AD02)
VIL
DRVP = 3.3 V 2/
dB
3.5
V
2.31
DRVP = 5.0 V 1/
1.5
DRVP = 3.3 V 2/
0.99
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
A
SHEET
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Digital high level input current
EN_H, STCNV_H, OE_H, CLK
(AD00 - AD02) 1/ 3/
IIH
Digital low level input current
EN_H, STCNV_H, OE_H, CLK
(AD00 - AD02) 1/ 3/
IIL
High input leakage current
(AIN00 - AIN15) 1/ 4/
IINLK(HI)
Low input leakage current
(AIN00 - AIN15) 1/ 4/
IINLK(LO)
Digital high level output voltage
(B00 - B13)
VOH
Digital low level output voltage
(B00 - B13)
VOL
Conditions
AVCC = +5.0 V, DVCC = +5.0 V,
DRVP = +5.0 V
-55°C ≤ TC ≤ +125°C
unless otherwise specified
DRVP = 5.0 V, VIH = 5.0 V,
All other digital inputs = DGND
01
2
1
Input under test = AVCC,
VEN = DVCC
1
Input under test = AGND,
VEN = DVCC
1
01
2
01
2
01
2
DRVP = 5.0 V, IOH = -1.0 mA 2/
1,2,3
01
Limits
Min
-5
5
50
-5
5
-50
50
-5
5
-50
50
-5
5
-50
50
DRVP = 3.3 V, IOH = -1.0 mA 2/
3.0
DRVP = 3.3 V, IOH = -4.0 mA 1/ 4/
2.7
DRVP = 5.0 V, IOL = 4.0 mA 1/ 4/
DRVP = 5.0 V, VEN ≥ VIH
Digital high level output current
(B00 - B13) 1/ 4/
IOH
Digital low level output current
(B00 - B13) 1/ 4/
IOL
High output leakage current
(B00 - B13) 1/ 4/
IOUTLK(HI)
VOE = DGND
Low output leakage current
(B00 - B13) 1/ 4/
IOUTLK(LO)
VOE = DGND
1,2,3
01
nA
nA
0.4
0.6
2
0.8
1,2,3
0.4
1,3
0.6
2
0.8
01
V
-4.0
DRVP = 3.3 V, VEN ≥ VIH
DRVP = 5.0 V, VEN ≥ VIH
nA
V
1,3
1,2,3
nA
4.6
4.2
DRVP = 5.0 V, IOL = 1.0 mA 2/
Unit
Max
-50
DRVP = 5.0 V, IOH = -4.0 mA 1/ 4/
DRVP = 3.3 V, IOL = 4.0 mA 1/ 4/
2/
3/
4/
1
DRVP = 5.0 V, VIL = 0.0 V,
All other digital inputs = DGND
DRVP = 3.3 V, IOL = 1.0 mA 2/
1/
Group A Device
subgroups type
mA
-4.0
1,2,3
01
4.0
DRVP = 3.3 V, VEN ≥ VIH
mA
4.0
1
01
2
1
01
2
-5
5
-50
50
-5
5
-50
50
nA
nA
This device has been tested to (100 krad(Si)) to Method 1019, condition A of MIL-STD-883 at +25°C for these
parameters.
Not tested. Shall be guaranteed by design, characterization, or correlation to other test parameters.
Subgroup 3 for these parameters is guaranteed, but not production tested.
This test or test condition was used during Radiation Lot Acceptance Testing (RLAT), but not production tested.
STANDARD
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REVISION LEVEL
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Case outline X.
FIGURE 1. Case outline.
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Case outline X - Continued.
Symbol
A
A1
A2
b
c
D/E
D1
e
F
J
L
L1
L2
L3
Inches
Min
Max
.120
.111
.005
.011
.0135
.0195
.004
.008
.590
.610
.444
.456
.050 BSC
.200 TYP
.035 TYP
2.490
2.510
2.580
1.700
1.740
2.090
2.110
Millimeters
Min
Max
3.05
2.82
.13
.28
.343
.495
.10
.20
14.99
15.49
11.28
11.58
1.27 BSC
5.08 TYP
.89 TYP
63.25
63.75
65.53
43.18
44.20
53.09
53.60
L4
N
S1
S2
.750 TYP
40
.030 TYP
.015 TYP
19.05 TYP
40
.76 TYP
.38 TYP
NOTES:
1. Pin 1 is indicated by the ESD marking on top of the package and the extended lead on the bottom of the package.
2. The U.S. preferred system of measurement is the metric SI. This item was designed using inch-pound units of
measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound
units shall rule.
3. N equals 40, the total number of leads on the package.
4. Pin numbers are for reference only.
FIGURE 1. Case outline(s) - Continued.
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Device type
01
Case outline
Terminal
number
Terminal
symbol
X
Terminal
number
Terminal
symbol
1
AVCC
21
B10
2
DVCC
22
B11
3
AD02
23
B12
4
AD01
24
B13
5
AD00
25
EOC_H
6
CASE GND
26
BUSY_L
7
STCNV_H
27
DRVN
8
EN_H
28
DRVP
9
OE_H
29
DGND
10
CLK
30
AGND
11
B00
31
PREF
12
B01
32
AIN07
13
B02
33
AIN06
14
B03
34
AIN05
15
B04
35
AIN04
16
B05
36
AIN03
17
B06
37
AIN02
18
B07
38
AIN01
19
B08
39
AIN00
20
B09
40
NREF
FIGURE 2. Terminal connections.
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AD02
AD01
AD00
EN_H
"ON" Channel
X
L
X
L
X
L
L
H
None
AIN00
L
L
L
H
H
L
H
H
AIN01
AIN02
L
H
H
L
H
L
H
H
AIN03
AIN04
H
H
L
H
H
L
H
H
AIN05
AIN06
H
H
H
H
AIN07
FIGURE 3. Truth table.
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DSCC FORM 2234
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REVISION LEVEL
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FIGURE 4. Block diagram.
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TABLE II. Electrical test requirements.
MIL-PRF-38534 test requirements
Subgroups
(in accordance with
MIL-PRF-38534, group A
test table)
Interim electrical parameters
1
Final electrical parameters
1*,2,3,4,5,6
Group A test requirements
1,2,3,4,5,6
Group C end-point electrical
parameters
1,2,3,4,5,6
End-point electrical parameters
for Radiation Hardness Assurance
(RHA) devices
1
* PDA applies to subgroup 1.
4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as
modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form,
fit, or function as described herein.
4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply:
a.
b.
Burn-in test, method 1015 of MIL-STD-883.
(1)
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to either DLA Land and Maritime-VA or the acquiring activity upon request.
Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance
with the intent specified in method 1015 of MIL-STD-883.
(2)
TA as specified in accordance with table I of method 1015 of MIL-STD-883.
Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter
tests prior to burn-in are optional at the discretion of the manufacturer.
4.3 Conformance and periodic inspections. Conformance inspection (CI) and periodic inspection (PI) shall be in accordance
with MIL-PRF-38534 and as specified herein.
4.3.1 Group A inspection (CI). Group A inspection shall be in accordance with MIL-PRF-38534 and as follows:
a.
Tests shall be as specified in table II herein.
b.
Subgroups 7, 8, 9, 10, and 11 shall be omitted.
4.3.2 Group B inspection (PI). Group B inspection shall be in accordance with MIL-PRF-38534.
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REVISION LEVEL
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4.3.3 Group C inspection (PI). Group C inspection shall be in accordance with MIL-PRF-38534 and as follows:
a.
End-point electrical parameters shall be as specified in table II herein.
b.
Steady-state life test, method 1005 of MIL-STD-883.
(1)
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to either DLA Land and Maritime-VA or the acquiring activity upon request.
Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance
with the intent specified in method 1005 of MIL-STD-883.
(2)
TA as specified in accordance with table I of method 1005 of MIL-STD-883.
(3)
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.3.4 Group D inspection (PI). Group D inspection shall be in accordance with MIL-PRF-38534.
4.3.5. Radiation hardness assurance (RHA). RHA qualification is required only for those devices with the RHA designator as
specified herein. See table IIIA and table IIIB.
Table IIIA. Radiation Hardness Assurance Method Table.
RHA
method
employed
Total Dose Testing
RHA level "R"
100 krad(Si)
Worst Case Analysis Performed
Element
level
Hybrid device
level
Tested at
100
krad(Si)
Tested at
100 krad(Si)
(See 4.3.5.1.1)
End point electricals after
total dose
Includes
Combines
Combines End-of-life Element level
temperature temperature total dose and
effects and radiation displacement
effects
effects
No
No
No
No
TC = +25°C
Hybrid device
level
TC = +25°C
Table IIIB. Hybrid level and element level test table.
Radiation Test
Total Dose
Heavy Ion
Low Dose Rate High Dose Rate ELDRS
SET
SEL
(LDR)
(HDR)
(transient) (latch-up)
CMOS IC
G
Tested
100 krad(Si)
G
Not
Tested
G
100 MeV2
cm /mg
Proton
Low
High
Energy Energy
SEE
(upset)
Not
Tested
Not
Tested
Not
Tested
Neutron
Displacement
Damage (DD)
G
NOTE:
G = Guaranteed by design or process.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-12211
A
REVISION LEVEL
A
SHEET
13
4.3.5.1 Radiation Hardness Assurance (RHA) inspection. RHA qualification is required for those devices with the RHA
designator as specified herein. End-point electrical parameters for radiation hardness assurance (RHA) devices shall be
specified in table II. Radiation testing will be in accordance with the qualifying activity (DLA Land and Maritime -VQ) approved
plan and with MIL-PRF-38534, Appendix G.
a.
The hybrid device manufacturer shall establish procedures controlling component radiation testing, and shall establish
radiation test plans used to implement component lot qualification during procurement. Test plans and test reports
shall be filed and controlled in accordance with the manufacturer's configuration management system.
b.
The hybrid device manufacturer shall designate a RHA program manager to oversee component lot qualification, and
to monitor design changes for continued compliance to RHA requirements.
4.3.5.1.1 Hybrid level RHA qualification. Hybrid level and element level testing are the same for the devices on this Standard
Microcircuit Drawing (SMD) since the active element is accessible to the device leads for test.
4.3.5.1.1.1 Qualification by similarity. The device on this (SMD) is considered similar for the purpose of RHA testing. Device
type 5962R1220301KXC was RHA tested, therefore the device type on this SMD is qualified by similarity.
4.3.5.1.2 Element level qualification.
4.3.5.1.2.1 Total ionizing dose irradiation testing. A minimum of 5 biased and 5 unbiased devices of the active element used
will be tested every wafer lot. This active element will be tested at HDR in accordance with condition A of method 1019 of MILSTD-883 to 100 krad(Si) for the device parameters as specified in table I herein.
4.3.5.1.2.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed per paragraph 3.12.2 of MIL-STD883, Test Method 1019 on all CMOS devices. The post-anneal end-point electrical parameter test data values shall not exceed
the maximum irradiated dose level limits specified in table I herein at 25°C ±5°C.
4.3.5.2 RHA Lot Acceptance. Each wafer lot of the active element shall be evaluated for acceptance in accordance with MILPRF-38534 and herein.
4.3.5.2.1 Total Ionizing Dose (TID). See paragraph 4.3.5.1.2.1 and 4.3.5.1.2.1.1 herein.
4.3.5.2.2 Enhanced Element Evaluation. Enhanced Element Evaluation per Table IV herein including 45 devices subjected to
Group C2, 1000 hours life testing, is required only for those devices with the RHA designator as specified herein.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-12211
A
REVISION LEVEL
A
SHEET
14
Table IV. Enhanced Element Evaluation For Microcircuit Die.
Subgroup
Class
K
2
X
1
3
4
Test
MIL-STD-883
Method
Condition
2010
X
X
X
Element visual
Assembled into package
as specified in 1.2.4
herein.
Element electrical
Internal visual
Temperature cycling
X
Constant acceleration
2001
X
Burn-in
1015
X
X
Interim electrical
Burn-in
1015
X
X
Post burn-in Final
Electrical, Group A
Steady-state life
1005
5
X
X
Final electrical
Wire bond evaluation
2011
6
X
SEM
2018
Quantity
(accept number)
100 percent
100 percent
2017
1010
100 percent
45(0)
45(0) 2/
C
3000g’s, Y1
direction
160 hours
minimum at
+125°C
Reference
Paragraph
1/
C.3.3.2
C.3.3.1
C.5.5
C.3.3.3
C.5.6
C.3.3.4.3
160 hours
minimum at
+125°C
C.5.10
1000 hours
minimum at
+125°C
10(0) wires or
20(1) wires
See method 2018
of MIL-STD-883
C.3.3.4.3
C.3.3.3
C.3.3.5
C.3.3.6
1/ See MIL-PRF-38534.
2/ Die shall be traceable to the wafer and wafer lot. The sample size shall consist of a minimum of 3 die from each wafer
and a minimum of 45 die from each wafer lot.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38534.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
6.3 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated as specified in MIL-PRF38534.
6.4 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and the applicable SMD to that system. DLA Land and Maritime will maintain a record of users and this list
will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices
(FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-12211
A
REVISION LEVEL
A
SHEET
15
6.5 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-1081.
6.6 Sources of supply. Sources of supply are listed in MIL-HDBK-103 and QML-38534. The vendors, listed in MIL-HDBK103 and QML-38534, have submitted a certificate of compliance (see 3.7 herein) to DLA Land and Maritime-VA and have
agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-12211
A
REVISION LEVEL
A
SHEET
16
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 16-05-23
Approved sources of supply for SMD 5962-12211 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38534 during the next revisions. MIL-HDBK-103 and QML-38534 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revisions of MIL-HDBK-103 and QML-38534. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-1221101KXC
5962R1221101KXC
88379
88379
RHD5958-201-1S
RHD5958-901-1S
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the Vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
88379
Vendor name
and address
Aeroflex Plainview Incorporated,
(Aeroflex Microelectronic Solutions)
35 South Service Road
Plainview, NY 11803-4193
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.