INFINEON TLE4203

4-A DC Motor Driver
TLE 4203
Overview
Bipolar IC
Features
•
•
•
•
•
Integrated free-wheeling diodes
Outputs short-circuit proof to VS and ground
Thermal overload protection
Blocking of the output stages upon undervoltage
Final push-pull stage free of cross-over
P-TO220-7-1
P-TO220-7-2
Type
Ordering Code
Package
TLE 4203
Q67000-A8121
P-TO220-7-1
TLE 4203 S
Q67000-A9101
P-TO220-7-2
Description
The integrated circuit TLE 4203 is a versatile double power driver of up to 4 A output
current which is particularly suitable as a driver for DC motors in reversible operation.
The push-pull power output stages operate in the switching mode and can be combined
to a full-bridge configuration.
The drive of the input stage is implemented using digital logic.
The device contains a temperature protection logic, output stages protected against
short-circuit and integrated free-wheeling diodes.
Typical applications are for follow-up control, servo drives, servo motors, drive
mechanisms, etc.
Semiconductor Group
1
1998-02-01
TLE 4203
.
1
2
3 4 5
6
7
VS1 GND VS2
Q2
IST2
IST1 Q1
AEP00618
Figure 1
Pin Configuration (top view)
Pin Definition and Functions
Pin No.
Symbol
Function
1
IST1
Control input for channel 1 (TTL/CMOS-compatible), of
non-inverting effect on the channel output.
2
VS1
Channel 1 supply voltage; externally connected with the
supply voltage pin for channel 2 (pin 6).
3
Q1
Short-circuit protected push-pull C output channel 1 for
currents up to 6 A. Free-wheeling diodes are integrated on
chip for inductive loads.
4
GND 1, 2
Ground; track should be designed for the max. short-circuit
current (2 x 6 A).
5
Q2
Short-circuit protected push-pull C output channel 2 for
currents up to 6 A. Free-wheeling diodes are integrated on
chip for inductive loads.
6
VS2
Channel 2 supply voltage; externally connected with the
supply voltage pin for channel 1 (pin 2).
7
IST2
Control input for channel 2 (TTL/CMOS-compatible), of
non-inverting effect on the channel output.
Semiconductor Group
2
1998-02-01
TLE 4203
Supply Voltage VS
6
2
Protection
Circuit 1
Control
Input 1
1
3
Control
Input 2
7
5
Output 1
Output 2
Protection
Circuit 2
4
GND
Figure 2
AEB00628
Block Diagram
Semiconductor Group
3
1998-02-01
TLE 4203
Application
In industrial and automotive electronics, power full-bridge DC motor drivers are mostly
used for bidirectional motor drives. The two TTL and CMOS-compatible control inputs
act on the output as follows:
Status
Input 1
Input 2
Output 1
Output 2
1
L
L
2
L
H
3
H
L
4
H
H
VQL
VQL
VQH
VQH
VQL
VQH
VQL
VQH
VQL means: Lower power unit conducting; upper power unit blocked.
VQH means: Upper power unit conducting; lower power unit blocked.
The following examples illustrate the operation:
Status 1: Motor is slowed down
Status 2: Motor turns right
Status 3: Motor turns left
Status 4: Motor is slowed down
Semiconductor Group
4
1998-02-01
TLE 4203
Circuit Description
Input Circuit
The control inputs consist of TTL and CMOS-compatible Schmitt triggers with hysteresis.
Buffer amplifiers, controlled from these stages, convert the logic signal into the form
required for driving the power output stages.
Output Stages
The output stages consist of two push-pull C stages. Using protective circuits for limiting
the power dissipation makes the outputs short-circuit proof to ground and to supply
voltage throughout the entire operating range. Positive and negative voltage peaks,
which occur when switching inductive loads, are limited by integrated power diodes.
Monitoring and Protecting Functions
The IC is protected against thermal overloads by a temperature protecting circuit.
In addition an internal circuit ensures that all output transistors are blocked for supply
voltages below operating range.
A monitoring stage logic for each output stage transistor detects whether the relevant
transistor is active and in this case for sink operation (source operation) prevents the
corresponding source transistor (sink transistor) from being turned on. Direct cross-over
currents are effectively prevented with this method.
Semiconductor Group
5
1998-02-01
TLE 4203
Absolute Maximum Ratings
TC = – 40 to 125 °C
Parameter
Symbol
Limit Values
Unit
min.
max.
VS
VI 1, 2
– 0.3
– 45
45
45
V
V
IS
– 12
12
A
IQ 1, 2
–6
6
A
IGND
– 12
12
A
Junction temperature
Storage temperature range
Tj
Tstg
–
– 50
150
150
°C
°C
Thermal resistances
system - case
system - ambient
Rth SC
Rth SA
–
–
3
65
K/W
K/W
VS
VI 1, 2
TC
5
– 10
20
40
V
V
– 40
125
°C
Voltages
Supply voltage
Logic input voltages
Currents
Supply current
TC ≤ 85 °C
Output current
TC ≤ 85 °C
Ground current
TC ≤ 85 °C
Temperatures
Operating Range
Supply voltage
Logic input voltage
Case temperature
Tj ≤ 150 °C
Semiconductor Group
6
1998-02-01
TLE 4203
Characteristics
VS = 8 to 18 V, Tj = – 25 to 125 °C (typ. VS = 12 V; Tj = 25 °C)
Parameter
Symbol
Limit Values
Unit Test Condition
min. typ.
max.
Iq
Iq
–
–
70
180
100
230
mA
mA
VI1 = VI2 > VIH
VI1 = VI2 < VIL
VIH
VIL
∆VI
2.8
–
–
–
–
0.7
–
1.2
–
V
V
V
–
–
–
IIH
– IIL
–
–
–
–
10
10
µA
µA
VI = 5 V
VI = 0.5 V
General Characteristics
Quiescent current
Quiescent current
Logic
Control inputs
H-input voltage
L-input voltage
Hysteresis of
input voltage
H-input current
L-input current
VS = 8 to 18 V, TC = – 25 to 125 °C
Switching Stages
Saturation voltages
to + VS
to + VS
to + VS
to ground
to ground
to ground
VQSato
VQSato
VQSato
VQSatu
VQSatu
VQSatu
–
–
–
–
–
–
1.1
1.5
2.5
0.3
0.6
1.6
1.3
1.8
3.5
0.6
1
3.2
V
V
V
V
V
V
VI 1, 2 > VIH; IQ = – 1 A 1)
VI 1, 2 > VIH; IQ = – 2 A 1)
VI 1, 2 > VIH; IQ = – 4 A 1)
VI 1, 2 < VIL; IQ = 1 A
VI 1, 2 < VIL; IQ = 2 A
VI 1, 2 < VIL; IQ = 4 A
– VQFo
– VQFo
– VQFo
– VQFu
– VQFu
– VQFu
–
–
–
–
–
–
0.95
1.05
1.30
0.95
1
1.20
1.3
1.5
1.8
1.3
1.5
1.8
V
V
V
V
V
V
VI 1/ 2 > VIH; IQ = 1 A 1)
VI 1/ 2 > VIH; IQ = 2 A 1)
VI 1/ 2 > VIH; IQ = 4 A 1)
VI 1/ 2 < VIL; IQ = – 1 A
VI 1/ 2 < VIL; IQ = – 2 A
VI 1/ 2 < VIL; IQ = – 4 A
Forward Voltages
Diode to + VS
Diode to + VS
Diode of + VS
Diode to ground
Diode to ground
Diode to ground
1)
measured to + VS
Semiconductor Group
7
1998-02-01
TLE 4203
Ι q, Ι S
470 nF
6
2
Ι Ι1 1
VS
4700 µF
63 V
3
Ι Q1
TLE 4203
Ι Ι2 7
VΙ1
VΙ2
RL
5
Ι Q2
VQ2
4
VQ1
ΙM
AES00620
Figure 3
Test Circuit
VΙ 1 = VΙ 2
t r = t f <_ 100 ns
VΙ H
VΙ L
t
td
Ι Q2
td
0t
tt
4A
-4 A
t
AET00621
Figure 4
Timing Diagram
Semiconductor Group
8
1998-02-01
TLE 4203
+ VS = 12 V
220 nF
1000 µF
1Ω
6
2
220 nF
1
Control
Inputs
3
TLE 4203
7
M
5
220 nF
4
1Ω
AES00622
Figure 5
Application Circuit
Semiconductor Group
9
1998-02-01
TLE 4203
Saturation Voltage versus
Output Current
ΙQ
Short-Circuit Current versus
Output Voltage
VA = VQ for sink operation
VA = VS – VQ for source operation
AED00623
250
ΙQ
VS =12 V
R L=2.4 Ω
mA
AED00625
6
A
5
200
TC = 25 ˚C
VΙ 1/2 < V Ι L
4
150
3
VΙ 1 = V Ι 2
100
2
VΙ 1/2 > V Ι H
50
1
0
-50
0
50
100
0
150 ˚C 200
0
10
20
30
V
Tj
40
VQ
Diode Forward Voltage versus
Output Current
Saturation Voltage versus
Output Current
AED00624
3.0
AED00626
1.4
VQ
VQ Fo
VQ
TC = 25 ˚C
V
V
VQ Fu
1.0
VQ Sato
2.0
0.8
1.5
TC = 25 ˚C
0.6
VQ Satu
1.0
0.4
0.5
0.0
0.2
0
1
2
3
4
A
0.0
5
1
2
3
4
A
5
ΙQ
ΙQ
Semiconductor Group
0
10
1998-02-01
TLE 4203
Package Outlines
P-TO220-7-1
(Plastic Transistor Single Outline)
10 +0.4
10.2 -0.2
1 x 45˚
+0.1
1.27 +0.1
8.6 ±0.3
0.4 +0.1
1.27
0.6
+0.1 1)
4.5 ±0.4
0.6 M
7x
8.4 ±0.4
1) 0.75 -0.15 at dam bar (max 1.8 from body)
1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Körper)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Semiconductor Group
15.4 ±0.3
8.8 -0.2
2.6
7
10.2 ±0.3
1
16 ±0.4
19.5 max
2.8
3.75
4.6 -0.2
11
GPT05108
Dimensions in mm
1998-02-01
TLE 4203
P-TO220-7-2
(Plastic Transistor Single Outline)
10 +0.4
10.2 -0.2
1 x 45˚
+0.1
1.27 +0.1
7
0.4 +0.1
0.6 +0.1 1)
0.6 M
7x
1) 0.75 -0.15 at dam bar (max 1.8 from body)
1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Körper)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
12
2.6
GPT05257
1.27
Semiconductor Group
15.4
13
1
11
8.8 -0.2
2.8
3.75
4.6 -0.2
Dimensions in mm
1998-02-01