MS12N65

MS12N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS12N65 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low gate charge ( typical 52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant package
Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Graphic symbol
Packing Information
Shipping:50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
12
A
Drain Current -Continuous (TC=100°C)
7.4
A
IDM
Pulsed Drain Current
48
A
EAS
Single Pulsed Avalanche Energy
865
mJ
EAR
Repetitive Avalanche Energy
23.1
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
ID
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS12N65
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
PD
TJ/TSTG
Value
Unit
Power Dissipation (TC=25°C)
231
W
Power Dissipation (TC=100°C)
1.85
W
-55 to +150
°C
Operating Junction and Storage Temperature
NOTE:
1. Repetitive rating; pulse width limited by maximum junction temperature.
Thermal characteristics (Tc=25°C unless otherwise noted)
Parameter
Typical thermal resistance
Static Characteristics
Symbol
Test Conditions
VGS
VDS = VGS, ID = 250μA
*RDS(ON)
VGS = 10 V , ID = 6 A
BVDSS
VGS = 0 V , ID = 250μA
△BVDSS /△TJ
ID=250μA, Referenced to 25°C
IDSS
VDS = 650 V , VGS = 0 V
VDS = 520 V , VGS = 0 V , Tj = 125°C
GFS
VDS = 30 V, VDS = 0 V
IGSS
VDS = -30 V, VDS = 0 V
Symbol
Value
RθJA
62.5
Rthjc
0.54
Min
Typ.
2.0
Unit
°C/W
Max.
Units
4.0
V
--
0.63
0.75
Ω
650
710
--
V
0.7
--
--
10
100
uA
100
S
--
--
-100
nA
Min
Typ.
Max.
Units
--
52
--
nC
--
8.5
--
Qgd
--
20
--
td(on)
--
30
--
ns
Dynamic Characteristics
Symbol
Test Conditions
Qg
Qgs
VDS = 520 V,ID = 12 A,
VGS = 10 V
tr
VDS = 325 V, ID = 10 A,
--
90
--
ns
td(off)
RG = 25 Ω
--
140
--
ns
--
90
--
ns
--
1850
--
pF
--
180
--
pF
--
20
--
pF
tf
CISS
COSS
VDS = 25 V, VGS = 0 V,
f=1.0MHz
CRSS
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS12N65
N-Channel Enhancement Mode Power MOSFET
Source-Drain Diode Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
IS
--
--
12
ISM
--
--
48
--
--
1.4
V
--
430
--
ns
--
5.0
--
uC
VSD
trr
Qrr
Units
A
IF = 12 A , VGS = 0
IF = 12 A , VGS = 0 , dIF/dt=100A/μs
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. IAS=12A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤12A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Ordering Information
Package
Shipping
TO-220
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS12N65
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014