MS9N90 900V N-Channel MOSFET Description The MS9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • RDS(on) (Max 1.4 Ω )@VGS=10V • Gate Charge (Typical 47nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • RoHS compliant package Application • Adapter • Switching Mode Power Supply Graphic symbol Packing & Order Information 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 9 A Drain Current -Continuous (TC=100°C) 6 A IDM Drain Current -Pulsed 36 A EAS Single Pulsed Avalanche Energy 900 mJ EAR Repetitive Avalanche Energy 28 mJ dV/dt Peak Diode Recovery dV/dt 4.0 V/ns Power Dissipation (TC=25°C) 280 W 2.22 W/°C -55 to +150 °C ID PD TJ/TSTG - Derate above 25C Operating Junction and Storage Temperature Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS9N90 900V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Maximum lead temperature for soldering purposes, TL 1/8'' from case for 5 seconds Value Unit 300 °C • Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 0.75 RθJA Junction-to-Ambient -- 62.5 °C/W On Characteristics Symbol Parameter Gate Threshold Voltage VGS Static Drain-Source *RDS(ON) On-Resistance Off Characteristics Symbol Parameter Test Conditions Min VDS = VGS, ID = 250μA 3.0 VGS = 10 V , ID = 4.5 A -- -- V -- 1.05 -- V/°C -- -- 10 μA VDS = 30 V, VDS = 0 V -- -- 100 μA VDS = -30 V, VDS = 0 V -- -- -100 nA Zero Gate Voltage Drain Current Dynamic Characteristics Symbol Parameter CISS VDS = 900 V , VGS = 0 V VDS = 720 V , VC = 125°C Test Conditions Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Publication Order Number: [MS12N60] Ω -- IDSS Reverse 1.40 900 ID = 250μA, Referenced to 25°C Gate-Body Leakage Current, V Units Breakdown Voltage Temperature IGSSR 5.0 Max. △BVDSS /△TJ Forward Units Typ. VGS = 0 V , ID = 250μA Gate-Body Leakage Current, 1.10 Max. Min Drain-Source Breakdown Voltage Coefficient Typ. Test Conditions BVDSS IGSSF Units VDS = 25 V, VGS = 0 V, f = 1.0MHz 100 Min Typ. Max. Units -- 2200 -- pF -- 180 -- pF -- 15 -- pF © Bruckewell Technology Corporation Rev. A -2014 MS9N90 900V N-Channel MOSFET Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units -- 60 -- ns td(on) Turn-On Time tr Turn-On Time VDS = 450 V, ID = 9 A, -- 130 -- ns td(off) Turn-Off Delay Time RG = 25 Ω -- 110 -- ns tf Turn-Off Fall Time -- 80 -- ns Qg Total Gate Charge -- 47 -- nC -- 15 -- nC -- 20 -- nC Min Typ. Max. Units Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 720 V,ID = 10 A, VGS= 9 V Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source-Drain Diode Forward Current -- -- 9.0 ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 35 VSD Source-Drain Diode Forward Voltage IS= 9 A , VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time IS= 9 A , VGS = 0 V -- 550 -- ns Qrr Reverse Recovery Charge diF/dt=100A/μs -- 6.5 -- μC A Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. L = 21mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS9N90 900V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014