MS12N60 N-Channel Enhancement Mode Power MOSFET Description The MS12N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=6600V typically @ Tj=150°C • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Ballast • Inverter Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box x MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 12 A Drain Current -Continuous (TC=100°C) 7.2 A IDM Pulsed Drain Current 48 A EAS Single Pulsed Avalanche Energy 870 mJ EAR Repetitive Avalanche Energy 22.5 mJ IAR Avalanche Current 12.0 A dV/dt Peak Diode Recovery dV/dt 3.5 V/ns ID • Drain current limited by maximum junction temperature Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS12N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol Parameter PD Value Unit Power Dissipation (TC=25°C) 225 W Derating Factor above 25 °C 1.78 W 300 °C -55 to +150 °C 150 °C Maximum Temperature for Soldering @ Lead at 0.125 TL in(0.318mm) from case for 10 seconds TSTG Operating Junction Temperature TJ Storage Temperature NOTE: 1. TJ=+25°C to +150°C. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=12A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150°C. 4. IAS=12A, VDD=50V, L=11mH, RG=25Ω, starting TJ=+25°C. Thermal Characteristics Symbol Parameter Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case -- -- 0.56 RθJA Thermal Resistance, Junction-to-Ambient -- -- 62.5 °C/W Static Characteristics Symbol Parameter Drain-Source Breakdown BVDSS Voltage Test Conditions Breakdown Voltage VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA Drain-Source Leakage VDS = 500 V , VGS = 0 V Current VDS = 400 V , TC = 125°C IGSS *RDS(ON) Temperature coefficient Gate-Source Leakage, Forward Static Drain-Source On-state Resis-tance 660 Max. Units -- V 0.5 V 2.0 -- -- -- VGS = ±30 V -- -- ±100 nA VGS = 10 V , ID = 6.0 A -- 0.53 0.65 Ω Min Typ. Max. Units -- 48 63 -- 8.5 -- -- 21 -- Test Conditions Total Gate Charge Qgs Qgs Gate-Source Charge Qgd Qgd Gate-Drain Charge(Miller Charge) Publication Order Number: [MS12N60] Typ. 600 ID = 250μA, Referenced to 25°C Dynamic Characteristics Symbol Parameter Qg Min VGS = 0 V , ID = 250μA △BVDSS /△TJ IDSS Units VDS = 250 V,ID = 12 A, VGS = 10 V 4.0 1 25 V uA nC © Bruckewell Technology Corporation Rev. A -2014 MS12N60 N-Channel Enhancement Mode Power MOSFET Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units -- 30 70 ns td(on) Turn-on Delay Time tr Rise Time VDS = 325 V, ID = 12 A, -- 85 180 ns td(off) Turn-off Delay Time VGS = 10 V , RG = 25 Ω -- 140 280 ns tf Fall Time -- 90 190 ns CISS Input Capacitance -- 1760 2290 pF -- 182 235 pF -- 21 28 pF Min Typ. Max. Units COSS Coss Output Capacitance CRSS Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0MHz Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS VD = VG = 0, -- -- 12 ISM VS = 1.3 V -- -- 48 VSD IF = 12 A , VGS = 0 -- -- 1.5 V trr IF = 12 A , VGS = 0 , -- 460 -- ns Qrr dIF/dt=100A/μs -- 4.9 -- uC A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS12N60 N-Channel Enhancement Mode Power MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS12N60 N-Channel Enhancement Mode Power MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014 MS12N60 N-Channel Enhancement Mode Power MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS12N60] © Bruckewell Technology Corporation Rev. A -2014