VS-6EWH06FNHM3 www.vishay.com Vishay Semiconductors Ultralow VF Ultrafast Rectifier, 6 A FRED Pt® FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation TO-252AA (D-PAK) 1 N/C • Low forward voltage drop 3 Anode • Low leakage current • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-252AA (D-PAK) IF(AV) 6A VR 600 V VF at IF 1.26 V trr (typ.) 18 ns DESCRIPTION / APPLICATIONS TJ max. 175 °C Diode variation Single die State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 144 °C Non-repetitive peak surge current IFSM TJ = 25 °C 70 Peak repetitive forward current IFM TC = 144 °C, f = 20 kHz, d = 50 % 12 Operating junction and storage temperatures TJ, TStg 6 A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 6 A MIN. TYP. MAX. 600 - - - 1.60 2.1 IF = 6 A, TJ = 150 °C - 1.26 1.7 VR = VR rated - - 50 TJ = 150 °C, VR = VR rated - - 250 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 3.5 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 10-Jul-15 Document Number: 94740 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time Reverse recovery charge TYP. MAX. - 18 25 UNITS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 22 - TJ = 25 °C - 27 - - 37 - - 4.1 - - 5.3 - TJ = 25 °C - 57 - TJ = 125 °C - 103 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C RthJC - - 3 °C/W trr TJ = 125 °C Peak recovery current MIN. IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 6 A dIF/dt = 200 A/μs VR = 390 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg SYMBOL TEST CONDITIONS Approximate weight Marking device Case style D-PAK 0.3 g 0.01 oz. 6EWH06FNH Revision: 10-Jul-15 Document Number: 94740 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FNHM3 Vishay Semiconductors 100 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 1 TJ = 125 °C TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C TJ = 25 °C TJ = 25 °C 0.1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 10-Jul-15 Document Number: 94740 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FNHM3 Vishay Semiconductors 40 180 170 35 DC 6 A, TJ = 125 °C 160 35 150 trr (ns) Allowable Case Temperature (°C) www.vishay.com 140 130 25 20 Square wave (D = 0.50) 80 % rated VR applied 6 A, TJ = 25 °C 15 120 See note (1) 110 0 2 4 6 8 10 100 10 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 200 14 RMS limit 180 12 160 10 140 Qrr (nC) Average Power Loss (W) 1000 8 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 6 4 2 3 6 120 100 80 60 40 6 A, TJ = 25 °C 20 0 0 6 A, TJ = 125 °C 9 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 0 100 1000 dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 10-Jul-15 Document Number: 94740 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FNHM3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 10-Jul-15 Document Number: 94740 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 6 E W H 06 FN TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (6 = 6 A) 3 - Circuit configuration: 4 - Package identifier: E = single diode W = D-PAK 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - FN = TO-252AA 8 - None = tube TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - H = AEC-Q101 qualified 10 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-6EWH06FNTRHM3 2000 2000 13" diameter reel VS-6EWH06FNTRRHM3 3000 3000 13" diameter reel VS-6EWH06FNTRLHM3 3000 3000 13" diameter reel VS-6EWH06FNHM3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 Revision: 10-Jul-15 Document Number: 94740 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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