VS-6EWX06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt® FEATURES • Hyperfast recovery time, extremely low Qrr 2, 4 • 175 °C maximum operating junction temperature • For PFC CCM operation • Low forward voltage drop TO-252AA (D-PAK) 1 N/C • Low leakage current 3 Anode • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-252AA (D-PAK) IF(AV) 6A VR 600 V VF at IF 1.65 V trr (typ.) 14 ns DESCRIPTION / APPLICATIONS TJ max. 175 °C Diode variation Single die State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 136 °C Non-repetitive peak surge current IFSM TJ = 25 °C 50 Peak repetitive forward current IFM TC = 136 °C, f = 20 kHz, d = 50 % 12 Operating junction and storage temperatures TJ, TStg 6 A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 6 A - 2.50 3.1 IF = 6 A, TJ = 150 °C - 1.65 1.9 VR = VR rated - - 20 TJ = 150 °C, VR = VR rated - - 250 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 3.5 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 10-Jul-15 Document Number: 94745 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWX06FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS Reverse recovery charge IRRM TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 14 21 IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 16 - TJ = 25 °C - 19 - - 27 - TJ = 125 °C Peak recovery current MIN. TJ = 25 °C TJ = 125 °C IF = 6 A dIF/dt = 200 A/μs VR = 390 V - 3.0 - - 4.0 - UNITS ns A TJ = 25 °C - 28 - TJ = 125 °C - 57 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C RthJC - - 3 °C/W Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg SYMBOL TEST CONDITIONS Approximate weight Marking device Case style TO-252AA (D-PAK) 0.3 g 0.01 oz. 6EWX06FNH Revision: 10-Jul-15 Document Number: 94745 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWX06FNHM3 Vishay Semiconductors 100 1000 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A www.vishay.com TJ = 175 °C 10 TJ = 125 °C 1 TJ = 25 °C TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.001 4.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 10-Jul-15 Document Number: 94745 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWX06FNHM3 Vishay Semiconductors 30 180 170 25 160 150 140 130 Square wave (D = 0.50) Rated VR applied 20 IF = 6 A, TJ = 25 °C 15 120 See note (1) 110 0 2 4 6 8 10 100 10 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 16 140 14 120 12 100 RMS limit 10 Qrr (nC) Average Power Loss (W) IF = 6 A, TJ = 125 °C DC trr (ns) Allowable Case Temperature (°C) www.vishay.com D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 8 6 4 2 3 6 IF = 6 A, TJ = 125 °C 60 40 20 0 0 80 9 IF = 6 A, TJ = 25 °C 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 10-Jul-15 Document Number: 94745 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWX06FNHM3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 10-Jul-15 Document Number: 94745 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWX06FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 6 E W X 06 FN TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (6 = 6 A) 3 - Circuit configuration: E = single diode 4 - Package identifier: 5 - X = hyperfast recovery time 6 - Voltage rating (06 = 600 V) 7 - FN = TO-252AA 8 - None = tube W = D-PAK TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - H = AEC-Q101 qualified 10 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-6EWX06FNTRHM3 2000 2000 13" diameter reel VS-6EWX06FNTRRHM3 3000 3000 13" diameter reel VS-6EWX06FNTRLHM3 3000 3000 13" diameter reel VS-6EWX06FNHM3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 Revision: 10-Jul-15 Document Number: 94745 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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