MSF15N60

MSF15N60
N-Channel Enhancement Mode Power MOSFET
Description
The MSF15N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
15
A
Drain Current -Continuous (TC=100°C)
9.5
A
IDM
Drain Current Pulsed
60
A
EAS
Single Pulsed Avalanche Energy
245
mJ
IAR
Avalanche Current
15
A
EAR
Repetitive Avalanche Energy
24
mJ
dV/dt
Peak Diode Recovery dV/dt
9.8
V/ns
ID
Publication Order Number: [MSF15N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF15N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
PD
Total Power Dissipation(@TC = 25 °C) 60 W
Derating Factor above 25 °C
Value
Unit
53
W
0.42
W/°C
Value
Unit
300
°C
-55 ~ 150
W
150
°C
• Drain current limited by maximum junction temperature
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
TL
Maximum Temperature for Soldering @ Lead at 0.125
in(0.318mm) from case for 10 seconds
TSTG
Operating Junction Temperature
TJ
Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=15A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25°C.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal characteristics
Symbol
Parameter
Max.
RθJC
Thermal Resistance, Junction-to-Case
2.58
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Units
°C/W
Static Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
2.0
--
4.0
V
--
0.42
0.52
Ω
600
--
--
V
--
0.7
--
V/°C
--
--
1
μA
--
--
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V,ID=7.5A
BVDSS
Drain-Source Breakdown Voltage
△BVDSS
Breakdown Voltage Temperature
ID=250μA, Referenced
/△TJ
Coefficient
to 25°C
IDSS
Drain-Source Leakage Current
IGSS
Gate-Body Leakage , Forward
Publication Order Number: [MSF15N60]
VGS=0 V , ID=250μA
Tj=150°C
VDS=600V , VGS= 0 V
VDS=480V , TC= 125°C
VGS=±30
10
±100
nA
© Bruckewell Technology Corporation Rev. A -2014
MSF15N60
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
50
101
ns
td(on)
Turn-On Time
tr
Turn-On Time
VDS=250 V, ID=15A,
--
78
162
ns
td(off)
Turn-Off Delay Time
VGS=10V , RG=9.1Ω
--
120
261
ns
tf
Turn-Off Fall Time
--
66
128
ns
Qg
Total Gate Charge
--
36
60
nC
Qgs
Gate-Source Charge
--
9
--
nC
Qgd
Gate-Drain Charge (Miller Charge)
--
16
--
nC
Min
Typ.
Max.
Units
--
2270
3000
pF
--
300
405
pF
--
23
37
pF
Min
Typ.
Max.
Units
Dynamic Characteristics
Symbol
Parameter
CISS
VDS=250V,ID=15A,
VGS=10 V
Test Conditions
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V, VGS=0V,
f=1.0MHz
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
VD=VG=0,
--
--
14
ISM
VS=1.3V
--
--
60
VSD
IS=12A , VGS= 0V
--
--
1.4
V
trr
IS=12A , VGS= 0V
--
600
--
ns
Qrr
diF/dt=100A/μs
--
7.2
--
μC
Publication Order Number: [MSF15N60]
A
© Bruckewell Technology Corporation Rev. A -2014
MSF15N60
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF15N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF15N60
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF15N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF15N60
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF15N60]
© Bruckewell Technology Corporation Rev. A -2014