Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • • Low gate charge (47nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Fast switching speed. • High performance trench technology for extremely low RDS(ON). Applications • High power and current handling capability. • • • 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V. DC/DC converter Load switch Battery protection D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ID Drain Current ±12 15 A - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg V Operating and Storage Junction Temperature Range W 1 -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 50 Thermal Resistance, Junction-to-Case (Note 1) 25 Package Outlines and Ordering Information Device Marking 4466 2001 Fairchild Semiconductor International Device Reel Size Tape Width Quantity Si4466DY 13’’ 12mm 2500 units Si4466DY Rev. A Si4466DY FDS6570A January 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V VGS = –12 V, VDS = 0 V 100 –100 nA nA On Characteristics 20 V 29 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250µA, Referenced to 25°C ID(on) On-State Drain Current VGS = 4.5 V, ID =15 A VGS = 4.5 V, ID =15 A, TJ=125°C VGS = 2.5 V, ID =12 A VGS = 4.5 V, VDS = 5.0 V gFS Forward Transconductance VDS = 5 V, ID = 15 A 0.4 0.9 1.5 -4 V mV/°C 0.006 0.009 0.008 0.0075 0.0130 0.0100 25 Ω A 70 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V, VGS = 0 V, f = 1.0 MHz 4700 pF 850 pF 310 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDS = 10 V, ID = 15 A, VGS = 5 V, 20 32 ns 27 44 ns 95 133 ns 35 56 ns 47 66 nC 7 nC 10.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.65 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 50° C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.02 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a 0.003 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Si4466DY Rev. A FDS6570A Si4466DY Electrical Characteristics FDS6570A Si4466DY Typical Characteristics 50 2.5 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS= 4.5V ID, DRAIN CURRENT (A) 2.5V 40 2.0V 3.0V 30 20 10 1.5V 0 2 VGS= 2.0V 1.5 2.5V 3.0V 4.5V 1 0.5 0 0.4 0.8 1.2 1.6 2 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 1.6 ID= 15A VGS= 4.5V ID= 7.0A RDS(ON), ON RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) 1.4 1.2 1 0.8 0.024 0.018 0.012 o TJ= 125 C o 25 C 0.006 0.6 -50 -25 0 25 50 75 100 125 150 0 o 1 TJ, JUNCTION TEMPERATURE ( C) 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 o VDS= 5V ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) 50 TJ= -55 C o 25 C o 40 125 C 30 20 10 VGS= 0 10 o TJ=125 C 1 o 25 C o 0.1 125 C 0.01 0.001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si4466DY Rev. A (continued) 5 7000 ID= 13A 6000 4 VDS= 5V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDS6570A Si4466DY Typical Characteristics 10V 3 15V 2 1 5000 Ciss 4000 3000 2000 1000 Coss Crss 0 0 0 10 20 30 40 0 50 4 12 16 20 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 50 100 100µs RDS(ON) Limit SINGLE PULSE o 1ms 10 RθJA=125 C/W 40 o TA=25 C POWER (W) 10ms 100ms 1s 10s 1 DC VGS= 4.5V SINGLE PULSE 0.1 30 20 10 o RθJA= 125 C/W 0.01 0.01 0.1 1 10 0 100 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.5 0.2 0.1 0.05 0.02 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 125°C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. Si4466DY Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G