Test Proced dure for the N NCV7425GE EVB 221/10/2011 R Required Equip pment • • • • Oscillosccope Bench Power Supply Voltmeteer Signal G Generator Figu ure 1: Test Setup Co onfiguration 111/13/2011 1 www.onsem mi.com Test procedure Step 1 (Power-up sequence, Standby mode): 1. 2. 3. 4. 5. 6. Connect the setup as shown above. Set STB, EN and TxD and G (LIN Switch Gate) to LOW. Apply an input voltage, VBAT = 12 V Set STB and TxD to HIGH Check VCC, LIN, INH, RxD and RSTN State Check IBAT. Caution should be taken with oscilloscope digital probes resistance which could have influence on overall IBAT current. Table 1: Desired Results IBAT = Typ. 40 µA, Max. 60 µA (Measured with disconnected digital probes, no VCC Load) VCC = ON LIN = RECESSIVE INH = FLOATING RxD = HIGH RSTN = HIGH Test procedure Step 2 (Transition to Normal mode): 1. 2. 3. Set EN HIGH Check VCC, LIN, INH, RxD and RSTN State Check IBAT. Caution should be taken with oscilloscope digital probes resistance which could have influence on overall IBAT current. Table 2: Desired Results IBAT = Typ. 0.64 mA, Max 1 mA (Measured with disconnected digital probes, no VCC Load) VCC = ON LIN = RECESSIVE INH = ON RxD = HIGH RSTN = HIGH 11/13/2011 2 www.onsemi.com Test procedure Step 3 (Transmit in Normal mode): 1. 2. Set TxD to LOW, wait <6ms, set TxD HIGH (Generate LIN Dominant state) Observe LIN and RxD. Start observation with TxD falling edge. Table 3: Desired Results LIN = Contain one Dominant pattern RxD = Contain one Dominant pattern Test procedure Step 4 (Transition to Sleep mode): 1. 2. 3. 4. Set STB to LOW Set EN LOW Set TxD LOW (to simulate a microcontroller without power supply being connected to TxD) Check IBAT, VCC, INH, RxD and RSTN State Table 4: Desired Results IBAT = Typ. 11 µA, Max 20 µA VCC = OFF INH = FLOATING RxD = LOW RSTN = LOW 11/13/2011 3 www.onsemi.com Test procedure Step 5 (Local Wakeup): 1. 2. 3. 4. In Sleep, press Local Wakeup switch Set STB and TxD to HIGH Check VCC, INH, RxD and RSTN State Check IBAT. Caution should be taken with oscilloscope digital probes resistance which could have influence on overall IBAT current. Table 5: Desired Results IBAT = Typ. 40 µA, Max. 60 µA (Measured with disconnected digital probes, no VCC Load) VCC = ON INH = FLOATING RxD = HIGH – Signaling Wakeup source – Local Wakeup RSTN = HIGH Test procedure Step 6 (Remote Wakeup): 1. 2. 3. 4. In Sleep, generate Remote Wakeup pattern: Set G HIGH, wait >150 us, set G LOW Set STB and TxD to HIGH Check VCC, INH, RxD and RSTN State Check IBAT. Caution should be taken with oscilloscope digital probes resistance which could have influence on overall IBAT current. Table 6: Desired Results IBAT = Typ. 0.37 mA – 3.3V version IBAT = Typ. 0.56 mA – 5V version (RxD 10 kΩ pull-up to VCC + 40 µA Standby current consumption) (Measured with disconnected digital probes, no VCC Load) VCC = ON INH = FLOATING RxD = LOW – Signaling Wakeup source – Remote Wakeup RSTN = HIGH 11/13/2011 4 www.onsemi.com DC Characteristics LIN DOMINANT LIN RECESSIVE INH HIGH VCC ON (3.3 V version) VCC ON (5 V version) RxD LOW RxD HIGH 11/13/2011 MIN TYP MAX 2V VBAT - 1 V VBAT - 0.75 V 3.19 V 4.83 V 3.3 V 5.0 V 3.41 V 5.17 V 0.65 V VCC-0.65 V 5 www.onsemi.com