MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 10 A Drain Current -Continuous (TC=100°C) 6.0 A IDM Drain Current Pulsed 40 A EAS Single Pulsed Avalanche Energy 710 mJ IAR Avalanche Current 10 A EAR Repetitive Avalanche Energy 16.2 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns ID Publication Order Number: [MSF10N65] © Bruckewell Technology Corporation Rev. A -2014 MSF10N65 650V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter PD TJ,TSTG Value Unit Power Dissipation (TC = 25 °C) 52 W Power Dissipation (TC=100°C) 0.42 W/°C -55 to +150 °C Operating and Storage Temperature Range NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=13mH, IAS=10.0A,VDD=50V, RG=25Ω,Starting TJ=25˚C 3. ISD ≤ 10.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating temperature Thermal characteristics (Tc=25°C unless otherwise noted) Symbol Parameter Max. RθJC Junction-to-Case 2.25 RθJA Junction-to-Ambient 62.5 °C/W On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units 3.0 -- 5.0 V -- 1.95 2.4 Ω VGS Gate Threshold Voltage VDS=VGS,ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V,ID=3A Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS Breakdown Voltage /△TJ Temperature Coefficient IDSS IGSSF IGSSR Test Conditions Min Typ. Max. Units VGS=0 V , ID=250μA 900 -- -- V -- 1.03 -- V/°C -- -- 10 μA VGS=30V , VDS=0 V -- -- 100 nA VGS=-30V , VDS=0 V -- -- -100 nA Min Typ. Max. Units -- 1500 2010 pF -- 145 190 pF -- 15 20 pF ID=250μA, Referenced to 25°C Zero Gate Voltage Drain VDS=900V , VGS= 0 V Current VDS=720V , TC= 125°C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Symbol Parameter CISS Units Test Conditions Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Publication Order Number: [MSF10N65] VDS=25V, VGS=0V, f=1.0MHz 100 © Bruckewell Technology Corporation Rev. A -2014 MSF10N65 650V N-Channel MOSFET Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units -- 40 80 ns td(on) Turn-On Time tr Turn-On Time VDS=450 V, ID=6A, -- 120 240 ns td(off) Turn-Off Delay Time RG=25Ω -- 60 120 ns tf Turn-Off Fall Time -- 70 140 ns Qg Total Gate Charge -- 33 45 nC Qgs Gate-Source Charge -- 10 -- nC Qgd Gate-Drain Charge -- 13 -- nC Min Typ. Max. Units VDS=720V,ID=6A, VGS=10 V Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source-Drain Diode Forward Current -- -- 6.0 ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 24.0 VSD Source-Drain Diode Forward Voltage IS=6A , VGS= 0V -- -- 1.4 V trr Reverse Recovery Time IS=6A , VGS= 0V -- 780 -- ns Qrr Reverse Recovery Charge diF/dt=100A/μs -- 9.0 -- μC A Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=34mH, IAS=6A, VDD=50V, RG=25Ω, Starting TJ=25℃ 3. ISD≦6A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSF10N65] © Bruckewell Technology Corporation Rev. A -2014 MSF10N65 650V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSF10N65] © Bruckewell Technology Corporation Rev. A -2014 MSF10N65 650V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSF10N65] © Bruckewell Technology Corporation Rev. A -2014 MSF10N65 650V N-Channel MOSFET ■Characteristics Test Circuit & Waveform Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Publication Order Number: [MSF10N65] © Bruckewell Technology Corporation Rev. A -2014 MSF10N65 650V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSF10N65] © Bruckewell Technology Corporation Rev. A -2014