MSF6N60 N-Channel Enhancement Mode Power MOSFET Description The MSF6N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Open Framed Power Supply • Adapter • STB Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 4.5 A Drain Current -Continuous (TC=100°C) 2.6 A IDM Drain Current Pulsed 18 A IAR Avalanche Current 4.5 A EAS Single Pulsed Avalanche Energy 58.6 mJ EAR Repetitive Avalanche Energy 10 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns ID Publication Order Number: [MSF6N60] © Bruckewell Technology Corporation Rev. A -2014 MSF6N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol Parameter TL TPKG PD Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25°C) Derating Factor above 25 °C TSTG Operating and Storage Temperature Range TJ Storage Temperature Value Unit 300 °C 260 °C 33 W 0.26 W/°C -55 to +150 °C 150 °C Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS=4.5A, VDD=50V, L=7mH, VG=10V, Starting TJ=25℃ 3. ISD≦4.5A, di/dt≦100A/μs,VDD≦BVDSS, Starting TJ=25℃ Thermal Characteristics Symbol Parameter Max. RθJC Thermal Resistance, Junction-to-Case 3.75 RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Static Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage Test Conditions Min Typ. Max. Units VGS = 0 V , ID=250μA 600 -- -- V -- 0.6 -- V/°C 2.0 -- 4.0 V -- -- 1 μA VGS = ±30 -- -- ±100 nA VGS = 10 V,ID = 3.0 A -- 1.8 2.3 Ω Min Typ. Max. Units -- 9.6 -- ns △BVDSS Breakdown Voltage /△TJ Temperature Coefficient VGS(th) Gate Threshold Voltage VDS = VGS,ID = 250μA Zero Gate Voltage Drain VDS = 600 V , VGS = 0 V Current VDS = 480 V , TC = 125°C IDSS IGSS RDS(ON) Units Gate-Body Leakage Forward Static Drain-Source On-Resistance Dynamic Characteristics Symbol Parameter ID = 250μA, Referenced to 25°C Test Conditions 10 td(on) Turn-On Time tr Turn-On Time VDS = 300 V, ID = 4.5 A, -- 12.2 -- ns td(off) Turn-Off Delay Time RG = 10 Ω , VGS = 10 V -- 22.3 -- ns tf Turn-Off Fall Time -- 14.8 -- ns Publication Order Number: [MSF6N60] © Bruckewell Technology Corporation Rev. A -2014 MSF6N60 N-Channel Enhancement Mode Power MOSFET Dynamic Characteristics Symbol Parameter Qg Test Conditions Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS = 300 V,ID = 4.5 A, VGS = 10 V VDS = 25 V, VGS = 0 V, f = 1.0MHz Min Typ. Max. Units -- 16 -- nC -- 3.3 -- nC -- 6.2 -- nC -- 700 -- pF -- 86 -- pF -- 20 -- pF Min Typ. Max. Units Source-Drain Diode Symbol Parameter Test Conditions IS VD = VG = 0 -- -- 4.5 ISM VS = 1.3 V -- -- 18 VSD IS = 4.5 A , VGS = 0 V -- -- 1.5 V trr IF = 4.5 A , VGS = 0 V -- 320 -- ns Qrr diF/dt=100A/μs -- 2.7 -- μC A Notes; 1. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% Publication Order Number: [MSF6N60] © Bruckewell Technology Corporation Rev. A -2014 MSF6N60 N-Channel Enhancement Mode Power MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSF6N60] © Bruckewell Technology Corporation Rev. A -2014 MSF6N60 N-Channel Enhancement Mode Power MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSF6N60] © Bruckewell Technology Corporation Rev. A -2014 MSF6N60 N-Channel Enhancement Mode Power MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSF6N60] © Bruckewell Technology Corporation Rev. A -2014