MS7N60 N-Channel Enhancement Mode Power MOSFET Description The MS7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Adapter • Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 7.0 A Drain Current -Continuous (TC=100°C) 4.4 A IDM Drain Current Pulsed 28 A IAR Avalanche Current 7.0 V EAS Single Pulsed Avalanche Energy 187 mJ EAR Repetitive Avalanche Energy 7.0 mJ dv/dt Peak Diode Recovery dv/dt 4.4 V/ns ID • Drain current limited by maximum junction temperature Publication Order Number: [MS7N60] © Bruckewell Technology Corporation Rev. A -2014 MS7N60 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TL TPKG PD Value Unit 300 °C 260 °C 44 W 0.35 W/°C -55 to +150 °C 150 °C Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation(@TC = 25 °C) 44 W Derating Factor above 25 °C TSTG Operating and Storage Temperature TJ Storage Temperature Note: 1. Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C. 3. ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C. Thermal Characteristics Symbol Parameter Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case -- -- 1.25 RθJA Thermal Resistance, Junction-to-Ambient -- -- 62.5 °C/W Static Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage Test Conditions Min Typ. Max. Units VGS = 0 V , ID = 250μA 600 -- -- V -- 0.60 -- V/°C 2.0 -- 4.0 V -- -- VGS = ±30 -- -- ±100 nA VGS = -10 V , ID = 3.5 V -- 1.08 1.2 Ω Min Typ. Max. Units -- 1332 -- pF -- 114 -- pF -- 61 -- pF △BVDSS Breakdown Voltage /△TJ Temperature Coefficient VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA Drain-Source Leakage VDS = 600 V , VGS = 0 V Current VDS = 480 V , TC = 125°C IDSS IGSS RDS(ON) Units Gate-Body Leakage, Forward Static Drain-Source On-state Resistance ID = 250μA, Referenced to 25°C Dynamic Characteristics Symbol Parameter CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Publication Order Number: [MS7N60] Test Conditions VDS=25V, VGS=0V, f=1.0MHz 1 10 uA © Bruckewell Technology Corporation Rev. A -2014 MS7N60 N-Channel Enhancement Mode Power MOSFET Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units -- 14.2 -- ns td(on) Turn-On Time tr Rise Time VDS = 300 V, ID = 6 A, -- 40 -- ns td(off) Turn-Off Delay Time VGS = 10 V, RG = 25 Ω -- 31.5 -- ns tf Fall Time -- 32.3 -- ns Qg Total Gate Charge -- 37 -- nC -- 6.0 -- nC -- 17.9 -- nC Min Typ. Max. Units Qgs Gate-Source Charge Qgd Gate-Drain Charge (Miller Charge) VDS = 300 V,ID = 6 A, VGS = 10 V Source-Drain Diode Symbol Parameter Test Conditions IS VD = VG = 0, -- -- 7.0 ISM VS = 1.3 V -- -- 28 VSD IS = 7 A , VGS = 0 V -- -- 1.5 V trr IS = 6 A , VGS = 0 V -- 504.9 -- ns Qrr diF/dt=100A/μs -- 47.59 -- uC A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Publication Order Number: [MS7N60] © Bruckewell Technology Corporation Rev. A -2014 MS7N60 N-Channel Enhancement Mode Power MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS7N60] © Bruckewell Technology Corporation Rev. A -2014