MS8N60

MS8N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS8N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
7.5
A
Drain Current -Continuous (TC=100°C)
4.5
A
IDM
Drain Current Pulsed
30
A
IAR
Avalanche Current
7.5
V
EAS
Single Pulsed Avalanche Energy
230
mJ
EAR
Repetitive Avalanche Energy
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
ID
• Drain current limited by maximum junction temperature
Publication Order Number: [MS8N60]
© Bruckewell Technology Corporation Rev. A -2014
MS8N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
TL
PD
Value
Unit
300
°C
Total Power Dissipation(@TC = 25 °C) 44 W
147
W
Derating Factor above 25 °C
1.18
W/°C
-55 to +150
°C
150
°C
Maximum Temperature for Soldering @ Lead at 0.125
in(0.318mm) from case for 10 seconds
TSTG
Operating and Storage Temperature
TJ
Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS≤7.5A, VDD=50V, L=7.5mH, VG=10V, starting TJ=+25°C.
3. ISD≤7.5A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal Characteristics
Symbol
Parameter
Min.
Typ.
Max.
RθJC
Thermal Resistance, Junction-to-Case
--
--
0.85
RθJA
Thermal Resistance, Junction-to-Ambient
--
--
62.5
Units
°C/W
Static ChaStatic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
Drain-Source Breakdown
VGS = 0 V , ID = 250μA
600
--
--
V
Voltage
Tj = 150°C
--
650
--
V
△BVDSS
Breakdown Voltage
Temperature Coefficient
ID = 250μA, Referenced to 25°C
--
0.65
--
V/°C
/△TJ
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 uA
2.0
--
4.0
V
Drain-Source Leakage
VDS = 600 V , VGS = 0 V
Current
VDS = 480 V , TC = 125°C
--
--
VGS = ±30
--
--
±100
nA
VGS = 10 V , ID = 3.75 V
--
1.08
1.2
Ω
BVDSS
IDSS
IGSS
RDS(ON)
Gate-Body Leakage,
Forward
Static Drain-Source
On-state Resistance
Publication Order Number: [MS8N60]
1
10
uA
© Bruckewell Technology Corporation Rev. A -2014
MS8N60
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol
Parameter
Qg
Test Conditions
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge (Miller Charge)
CISS
Input Capacitance
VDD = 300 V,ID = 6 A,
VGS = 10 V
VDS = 25 V, VGS = 0 V,
Min
Typ.
Max.
Units
--
31.3
--
nC
--
6.9
--
nC
--
14
--
nC
--
1482
--
pF
--
121.7
--
pF
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
--
14
--
pF
td(on)
Turn-On Time
--
14.2
--
ns
tr
Rise Time
VDS = 300 V, ID = 6 A,
--
11.8
--
ns
td(off)
Turn-Off Delay Time
VGS = 10 V, RG = 10 Ω
--
40.1
--
ns
tf
Fall Time
--
18.8
--
ns
Min
Typ.
Max.
Units
f = 1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
IS
VD = VG = 0,
--
--
7.5
ISM
VS = 1.3 V
--
--
30
VSD
IS = 7.5 A , VGS = 0 V
--
--
1.5
V
trr
IF = 6 A , VGS = 0 V
--
504.9
--
ns
Qrr
diF/dt=100A/μs
--
47.59
--
uC
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Publication Order Number: [MS8N60]
© Bruckewell Technology Corporation Rev. A -2014
MS8N60
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS8N60]
© Bruckewell Technology Corporation Rev. A -2014