MS8N50 N-Channel Enhancement Mode Power MOSFET Description The MS8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=550V typically @ Tj=150°C • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Ballast • Inverter Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 8.0 A Drain Current -Continuous (TC=100°C) 4.8 A IDM Drain Current Pulsed 32 A IAR Avalanche Current 8.0 V EAS Single Pulsed Avalanche Energy 290 mJ EAR Repetitive Avalanche Energy 12.5 mJ dv/dt Peak Diode Recovery dv/dt 3.5 V/ns ID • Drain current limited by maximum junction temperature Publication Order Number: [MS8N50] © Bruckewell Technology Corporation Rev. A -2014 MS8N50 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TL TPKG PD Value Unit 300 °C 260 °C Total Power Dissipation(@TC = 25 °C) 44 W 125 W Derating Factor above 25 °C 1.0 W/°C -55 to +150 °C 150 °C Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds TSTG Operating and Storage Temperature TJ Storage Temperature Note: 1. TJ=+25°C to +150°C. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=8A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150°C. 4. IAS=8A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25°C. Thermal Characteristics Symbol Parameter Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case -- -- 1.0 RθJA Thermal Resistance, Junction-to-Ambient -- -- 62.5 Units °C/W Static Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units Drain-Source Breakdown VGS = 0 V , ID = 250μA 500 -- -- V Voltage Tj = 150°C -- 550 -- V △BVDSS Breakdown Voltage Temperature Coefficient ID=250μA, Referenced to 25°C -- 0.60 -- V/°C /△TJ VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 -- 4.0 V Drain-Source Leakage VDS = 500 V , VGS = 0 V Current VDS = 400 V , TC= 125°C -- -- VGS = ±30 -- -- ±100 nA VGS =10 V , ID = 4.0 V -- 0.70 0.85 Ω BVDSS IDSS IGSS RDS(ON) Gate-Body Leakage, Forward Static Drain-Source On-state Resistance Publication Order Number: [MS8N50] 1 25 uA © Bruckewell Technology Corporation Rev. A -2014 MS8N50 N-Channel Enhancement Mode Power MOSFET Dynamic Characteristics Symbol Parameter Qg Test Conditions Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Miller Charge) CISS Input Capacitance VDD = 250 V,ID = 8 A, VGS = 10 V VDS = 25 V, VGS = 0 V, Min Typ. Max. Units -- 30 -- nC -- 5 -- nC -- 16 -- nC -- 1300 -- pF -- 310 -- pF COSS Output Capacitance CRSS Reverse Transfer Capacitance -- 120 -- pF td(on) Turn-On Time -- 14 -- ns tr Rise Time VDS = 250 V, ID = 8 A, -- 23 -- ns td(off) Turn-Off Delay Time VGS = 10 V, RG = 10 Ω -- 49 -- ns tf Fall Time -- 20 -- ns Min Typ. Max. Units f=1.0MHz Source-Drain Diode Symbol Parameter Test Conditions IS VD = VG = 0, -- -- 8.0 ISM VS = 1.3 V -- -- 32 VSD IS = 8 A , VGS = 0 V -- -- 1.5 V trr IS = 8 A , VGS = 0 V -- 460 -- ns Qrr diF/dt=100A/μs -- 4.2 -- uC A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Publication Order Number: [MS8N50] © Bruckewell Technology Corporation Rev. A -2014 MS8N50 N-Channel Enhancement Mode Power MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS8N50] © Bruckewell Technology Corporation Rev. A -2014