V6WM100C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 3 A FEATURES ® TMBS • Trench MOS Schottky technology TO-252 (D-PAK) • Ideal for automated placement • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per LF maximum peak of 260 °C A J-STD-020, • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 A V6WM100C TYPICAL APPLICATIONS A A K For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. HEATSINK MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2x3A VRRM 100 V IFSM 75 A VF at IF = 3 A (TA = 125 °C) 0.56 V TJ max. 150 °C Package TO-252 (D-PAK) Diode variation Dual common cathode Case: TO-252 (D-PAK) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL V6WM100C UNIT VRRM 100 V 6 per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range IF(AV) A 3 IFSM 75 A TJ, TSTG -40 to +150 °C Revision: 04-Dec-13 Document Number: 89969 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V6WM100C-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C Instantaneous forward voltage per diode IF = 3 A Reverse current per diode VR = 100 V TYP. MAX. 0.65 0.74 0.56 0.65 - 150 μA 2 6 mA VF (1) TA = 125 °C TA = 25 °C IR (2) TA = 125 °C UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V6WM100C RJC per device Typical thermal resistance UNIT 3.8 per diode 1.9 RJA (1) (2) per device °C/W 65 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V6WM100C-M3/I 0.38 I 2500/reel 13" diameter plastic tape and reel 7 RthJA=RthJC=1.9oC/W 6 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 5 4 RthJA=65oC/W 3 2 1 0 0 25 50 75 100 125 150 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 D = 0.8 D = 0.5 D = 0.3 D = 0.2 D = 1.0 D = 0.1 T D = tp/T 0 0.4 0.8 1.2 1.6 2 2.4 tp 2.8 3.2 3.6 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 04-Dec-13 Document Number: 89969 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V6WM100C-M3 www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0.1 1 Instantaneous Forward Voltage (V) 10 TA = 150 °C 1 TA = 125 °C TA = 100 °C 0.01 0.001 TA = 25 °C 0.0001 30 40 50 60 70 80 Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 20 90 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 0.1 10 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Device Revision: 04-Dec-13 Document Number: 89969 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V6WM100C-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-252 (D-PAK) A E Mounting Pad Layout in inches (millimeters) 0.002" c -A- 0.244 MIN. (6.2) 0.05 mm b3 L3 1.55 mm REF. 0.256 (6.5) MIN. D H A1 L4 b2 0.39 (9.9) 0.488 (12.4) b e See detail A 0.094 MIN. (2.4) c 0.051 MIN. (1.3) 0.086 (2.19) 0.094 (2.39) L2 D1 E1 θ L 0.004" 0.1 mm SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. A 0.086 0.094 2.19 2.38 A1 - 0.005 - 0.13 b 0.025 0.035 0.64 0.89 b2 0.033 0.045 0.84 1.14 b3 0.205 0.215 5.21 5.46 c 0.018 0.024 0.46 0.61 D 0.235 0.250 5.97 6.22 D1 0.205 - 5.21 - E 0.250 0.265 6.35 6.73 E1 0.190 - 4.83 - e 0.090 BSC. 2.29 BSC. H 0.380 0.410 9.65 10.41 L 0.055 0.070 1.40 1.78 L2 0.020 BSC. 0.51 BSC. L3 0.035 0.050 0.89 1.27 L4 0.025 0.039 0.64 1.01 0° 8° 0° 8° Note • Conforms to JEDEC TO-252 variation AA except dimension “D” Revision: 04-Dec-13 Document Number: 89969 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000