BSP171P SIPMOS® Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS(on),max 0.3 Ω ID -1.9 A • Logic level • Avalanche rated • dv /dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant Type Package Tape and Reel Information Marking BSP 171 P PG-SOT-223 L6327: 1000 pcs/reel 171P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit steady state Continuous drain current ID T A=25 °C1) -1.9 T A=70 °C1) -1.5 -7.6 A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-1.9 A, R GS=25 Ω 70 mJ Reverse diode dv /dt dv /dt I D=-1.9 A, V DS=-48 V, di /dt =-200 A/µs, T j,max=150 °C -6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C1) V 1.8 W -55 ... 150 °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 2.4 ±20 page 1 2007-02-08 BSP171P Parameter Values Symbol Conditions Unit min. typ. max. - - 25 minimal footprint, steady state - - 110 6 cm2 cooling area1), steady state - - 70 Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-460 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-60 V, V GS=0 V, T j=125 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-1.5 A - 0.3 0.45 Ω V GS=-10 V, I D=-1.9 A - 0.21 0.3 1.4 2.7 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.5 A S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev 2.4 page 2 2007-02-08 BSP171P Parameter Values Symbol Conditions Unit min. typ. max. - 365 460 - 105 135 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 40 55 Turn-on delay time t d(on) - 6 8 Rise time tr - 25 33 Turn-off delay time t d(off) - 208 276 Fall time tf - 87 130 Gate to source charge Q gs - -1.2 -1.6 Gate to drain charge Q gd - -5 -7 Gate charge total Qg - -13 -20 Gate plateau voltage V plateau - -3 - Output charge Q oss - -5 -7 - - -1.9 - - -7.6 - -0.84 -1.1 V - 80 120 ns - -125 -190 nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-25 V, V GS=-10 V, I D=-1.9 A, R G=6 Ω pF ns Gate Charge Characteristics2) V DD=-48 V, I D=1.9 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr T A=25 °C V GS=0 V, I F=1.9 A, T j=25 °C A V R=-30 V, I F=|I S|, di F/dt =100 A/µs Reverse recovery charge 2) Q rr See figure 16 for gate charge parameter definition Rev 2.4 page 3 2007-02-08 BSP171P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥10 V 1.5 1.5 -I D [A] 2 P tot [W] 2 1 1 0.5 0.5 0 0 0 40 80 120 0 160 40 T A [°C] 80 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 10 µs 100 µs 1 ms 0.5 10 ms 0.2 100 101 100 ms -I D [A] Z thJS [K/W] 0.1 limited by on-state resistance 10-1 DC 0.02 100 10-2 0.01 single pulse 10-1 0.1 1 10 100 -V DS [V] Rev 2.4 0.05 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2007-02-08 BSP171P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 5 -5.5 V 600 -4.5 V -4 V -5 V -3 V -10 V 500 4 -3.5 V 400 R DS(on) [mΩ] -I D [A] 3 -3.5 V 2 -4 V -4.5 V 300 -5 V -5.5 V -10 V 200 -3 V 1 100 -2.5 V 0 0 0 1 2 3 4 0 5 1 -V DS [V] 2 3 4 3 4 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 6 5 5 4 4 g fs [S] -I D [A] 3 3 2 2 1 1 C °125 C °25 0 0 0 1 2 3 4 5 Rev 2.4 0 1 2 -I D [A] -V GS [V] page 5 2007-02-08 BSP171P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-460 µA 3 500 2.5 400 98 % 300 -V GS(th) [V] R DS(on) [mΩ] 2 200 typ. max. 1.5 typ. min. 1 100 0.5 0 0 -60 -20 20 60 100 140 -60 180 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 101 25 °C, typ 150 °C, typ 150 °C, 98% Ciss 100 25 °C, 98% I F [A] C [pF] Coss 102 Crss 10-1 101 10-2 0 10 20 30 -V DS [V] Rev 2.4 0 0.5 1 1.5 -V SD [V] page 6 2007-02-08 BSP171P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.9 A pulsed parameter: T j(start) parameter: V DD 10 12 0.5 VBR(DSS) 10 C °25 8 0.2 VBR(DSS) V GS [V] -I AV [A] 0.8 VBR(DSS) C °100 1 C °125 6 4 2 0.1 0 1 10 100 1000 0 5 10 15 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-1 mA 70 V GS Qg 65 -V BR(DSS) [V] 60 55 V g s(th) 50 45 Q g (th) Q sw Q gs 40 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev 2.4 page 7 2007-02-08 BSP171P Package Outline SOT-223: Outline Footprint Packaging Tape Dimensions in mm Rev 2.4 page 8 2007-02-08 BSP171P Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.4 page 9 2007-02-08