INFINEON BB689-02V

BB669/BB689...
Silicon Tuning Diode
For VHF 2-Band-hyperband-TV-tuners
Very high capacitance ratio
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB669
BB689
BB689-02V
1
2
Type
BB669
BB689
BB689-02V
Package
SOD323
SCD80
SC79
Configuration
single
single
Single
LS(nH)
1.8
0.6
0.6
Marking
1
EE
E
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
30
Peak reverse voltage
VRM
35
Forward current
IF
20
mA
Operating temperature range
Top
-55 ... 150
°C
Storage temperature
Tstg
-55 ... 150
Value
Unit
V
( R 5k )
1
Mar-27-2003
BB669/BB689...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 30 V
-
-
10
VR = 30 V, TA = 85 °C
-
-
200
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
min.
typ.
Unit
max.
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
51
56.5
61.5
VR = 2 V, f = 1 MHz
39.6
43.4
47.2
VR = 25 V, f = 1 MHz
2.6
2.8
3
VR = 28 V, f = 1 MHz
2.5
2.7
2.9
CT1 /CT28
18
20.9
23.2
CT2 /CT25
14.5
15.5
17
CT/CT
-
-
2
%
rS
-
0.85
-
Capacitance ratio
-
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching1)
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
VR = 8 V, f = 470 MHz
1For
details please refer to Application Note 047
2
Mar-27-2003
BB669/BB689...
Diode capacitance CT = (VR )
Temperature coefficient of the diode
capacitance TCc = (VR )
f = 1MHz
10 -3
60
pF
50
1/°C
TC C
CT
45
40
35
10 -4
30
25
20
15
10
5
0
0
4
8
12
16
20
24
V
10 -5 0
10
30
VR
Reverse current I R =
10
1
V
10
2
VR
(V R)
T A = Parameter
3
10
85°C
pA
2
IR
10
25°C
10
1
10
0
10
-1
10
0
10
1
V
10
2
VR
3
Mar-27-2003