BB 857 Silicon Tuning Diode • For SAT-indoor-units • High capacitance ratio 2 • Low series inductance • Low series resistance • Extremely small plastic SMD package 1 • Excellent uniformity and matching due to VES05991 "in-line" matching assembly procedure Type Marking Ordering Code Pin Configuration Package BB 857 O Q62702-B0897 unmatched BB 857 O Q62702-B0893 inline matched 1=C 2=A SCD-80 Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage (R ≥ 5kΩ) VRM 35 Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit V Mar-27-1998 1998-11-01 BB 857 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 200 DC characteristics Reverse current nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 6 6.6 7.2 VR = 25 V, f = 1 MHz - 0.55 - VR = 28 V, f = 1 MHz 0.45 0.54 0.65 CT1/C T25 - 12 - CT1/C T28 9.7 12.2 - ∆CT/C T - - 5 % rs - 1.5 - Ω Ls - 0.6 - nH Capacitance ratio - VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Mar-27-1998 1998-11-01 BB 857 Diode capacitance CT = f (V R) f = 1MHz 10 pF 8 CT 7 6 5 4 3 2 1 0 0 10 10 1 V VR Semiconductor Group Semiconductor Group 33 Mar-27-1998 1998-11-01