BBY66... Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread BBY66-02V BBY66-05 BBY66-05W 1 3 2 D 2 D 1 1 Type BBY66-02V* BBY66-05 BBY66-05W* 2 Package SC79 SOT23 SOT323 Configuration single common cathode common cathode LS(nH) 0.6 1.8 1.4 Marking h O1s / O2s** OBs * Preliminary **For differences see next page Capacitance groups Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 12 V Forward current IF 50 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 1 Value Unit Nov-14-2002 BBY66... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 10 V - - 20 VR = 10 V, TA = 65 °C - - 200 AC Characteristics Diode capacitance1) pF CT VR = 1 V, f = 1 MHz 66 68.7 71.5 VR = 2 V, f = 1 MHz 33 35.4 38 VR = 3 V, f = 1 MHz 19.7 20.95 22.2 12 12.7 13.5 CT1 /CT4.5 5 5.41 - rS - 0.25 0.4 VR = 4.5 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4.5 V Series resistance VR = 1 V, f = 470 MHz 1Capacitance CT/groups groups at 1V, coded 01; 02 (only BBY66-05) 01 02 C1V min 66pF 68.5pF C1V max 69pF 71.5pF Deliveries contain either CT group 01 or group 02 (marked on reel). No direct order of CT groups possible 2 Nov-14-2002 BBY66... Diode capacitance CT = (VR ) Temperature coefficient of the diode capacitance TCc = (VR ) f = 1MHz 1200 80 pF ppm/°C TC C CT 60 50 600 40 30 300 20 10 0 0 1 2 V 3 0 1 5 VR Reverse current I R = 2 3 V 5 VR (V R) T A = Parameter 10 4 pA TA=+85°C 10 3 IR TA=+65°C TA=+25°C 10 2 10 1 10 0 2 3 4 5 6 7 8 9 10 V 12 VR 3 Nov-14-2002