NPN Silicon RF Transistor ● For SAW filter driver applications in TV tuners ● For linear broadband VHF amplifier stages ● For oscillator applications BF 959 Type Marking Ordering Code BF 959 – Q62702-F640 Pin Configuration 1 2 3 C E Package1) TO-92 B Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-emitter reverse voltage VCES 30 Collector-base voltage VCB0 30 Emitter-base voltage VEB0 3 Peak collector current ICM 100 Peak base current IBM 30 Total power dissipation, TA ≤ 25 ˚C VCE ≤ 15 V Ptot 500 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 250 K/W BF 959 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA V(BR) CE0 20 – – Collector-base breakdown voltage IC = 10 µA V(BR) CB0 30 – – Emitter-base breakdown voltage IE = 10 µA V(BR) EB0 3 – – Collector cutoff current V = 20 V ICB0 – – 100 DC current gain, VCE = 10 V IC = 5 mA IC = 20 mA hFE Base-emitter voltage IC = 20 mA, VCE = 10 V V nA – 35 40 – 85 – – VBE – 0.75 – Collector-emitter saturation voltage IC = 30 mA, IB = 2 mA VCE sat – – 1 Base-emitter saturation voltage IC = 30 mA, IB = 2 mA VBE sat – – 0.95 700 600 1100 – – – V AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz IC = 30 mA, VCE = 5 V fT Output capacitance VCB = 10 V, IE = 0, f = 1 MHz Cobo – 0.9 – Collector-base capacitance VCE = 10 V, VBE = 0, f = 1 MHz Ccb – 0.75 – Noise figure VCE = 10 V, f = 200 MHz, RS = 60 Ω IC = 5 mA IC = 20 mA F Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz g22e Semiconductor Group 2 MHz pF dB – – 3 4 – – – 0.06 – mS BF 959 Total power dissipation Ptot = f (TA) Transition frequency fT = f (IC) f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Semiconductor Group 3