BB 664 Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio 2 • Low series inductance • Low series resistance • Extremely small plastic SMD package 1 • Excellent uniformity and matching due to VES05991 "in-line" matching assembly procedure Type Marking Ordering Code Pin Configuration Package BB 664 4 Q62702- B0909 (unmatched) 1=C BB 664 4 Q62702- B0908 (in-lined matched) 2=A SCD-80 Value Unit Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage (R ≥ 5kΩ) VRM 35 Forward current IF 20 mA Operating temperature range T op -55.. ...+125 °C Storage temperature T stg -55... ...+150 Semiconductor Group Semiconductor Group 11 V Jul-10-1998 1998-11-01 BB 664 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 100 DC characteristics Reverse current nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 39 41.8 44.5 VR = 2 V, f = 1 MHz 29.4 31.85 34.2 VR = 25 V, f = 1 MHz 2.5 2.7 2.85 VR = 28 V, f = 1 MHz 2.4 2.55 2.75 11 11.8 12.5 16.4 17.5 CT2/C T25 Capacitance ratio - VR = 2 V, VR = 25 V, f = 1 MHz CT1/C T28 15.2 Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) ∆CT/C T - - 2 % rs - 0.6 0.75 Ω Ls - 0.6 - nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-10-1998 1998-11-01 BB 664 Diode capacitance CT = f (V R) f = 1MHz 40 5 pF CT 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V 30 VR Semiconductor Group Semiconductor Group 33 Jul-10-1998 1998-11-01