BBY55... Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W 2 Type BBY55-02V BBY55-02W BBY55-03W Package SC79 SCD80 SOD323 Configuration single single single LS(nH) 0.6 0.6 1.8 Marking 7 77 7 white Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 16 V Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 1 Value Unit Nov-14-2002 BBY55... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 15 V - - 3 VR = 15 V, TA = 85 °C - - 100 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 17.5 18.6 19.6 VR = 2 V, f = 1 MHz 14 15 16 VR = 3 V, f = 1 MHz 11.6 12.6 13.6 VR = 4 V, f = 1 MHz 10 11 12 VR = 10 V, f = 1 MHz 5.5 6 6.5 CT2 /CT10 2 2.5 3 rS - 0.15 0.4 Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 2 Nov-14-2002 BBY55... Diode capacitance CT = (VR ) Capacitance change C = (TA) f = 1MHz f = 1 MHz 4 30 pF % 1V 2V 24 2 22 ∆C CT 20 18 6V 10V 1 16 0 14 12 -1 10 8 -2 6 4 -3 C=(C(TA)-C(25°C))/C(25°C) -4 -50 -30 2 0 0 2 4 6 8 10 V 14 -10 10 30 50 70 VR °C 110 TA Series resistance r S= (V R) f = 470 MHz Reverse current IR = (VR) TA = Parameter 10 -9 0.5 A Ohm 80°C IR rs 10 -10 0.3 60°C 25°C 0.2 10 -11 0.1 0 0 2 4 6 8 10 V 10 -12 0 14 VR 2 4 6 8 10 12 14 V 18 VR 3 Nov-14-2002