INFINEON Q62702

BB 644
Silicon Variable Capacitance Diode
Preliminary data
• For VHF TV-tuners
• High capacitance ratio
• Low series inductance
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
Type
Marking Ordering Code
Pin Configuration Package
BB 644
yellow 4
Q62702-B0905 group matched
1=C
BB 644
yellow 4
Q62702-B0907 unmatched
2=A
SOD-323
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
30
Peak reverse voltage (R ≥ 5kΩ)
VRM
35
Forward current
IF
20
mA
Operating temperature range
T op
-55 ...+150
°C
Storage temperature
T stg
-55 ...+150
Semiconductor Group
Semiconductor Group
11
Value
Unit
V
Jul-09-1998
1998-11-01
BB 644
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
10
IR
-
-
100
DC characteristics
Reverse current
nA
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
39
41.8
44.5
VR = 2 V, f = 1 MHz
29.4
31.85
34.2
VR = 25 V, f = 1 MHz
2.5
27
2.85
VR = 28 V, f = 1 MHz
2.4
2.55
2.75
11
11.8
12.5
16.4
17.5
Capacitance ratio
CT2/C T25
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
CT1/C T28 15.2
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio 1)
∆CT/C T
-
-
2
%
rs
-
0.6
0.75
Ω
Ls
-
1.8
-
nH
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
Series inductance
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
Semiconductor Group
22
Jul-09-1998
1998-11-01
BB 644
Diode capacitance CT = f (V R)
f = 1MHz
70
pF
60
CT
55
50
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
V
35
VR
Semiconductor Group
Semiconductor Group
33
Jul-09-1998
1998-11-01