BB 644 Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure Type Marking Ordering Code Pin Configuration Package BB 644 yellow 4 Q62702-B0905 group matched 1=C BB 644 yellow 4 Q62702-B0907 unmatched 2=A SOD-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage (R ≥ 5kΩ) VRM 35 Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit V Jul-09-1998 1998-11-01 BB 644 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 100 DC characteristics Reverse current nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 39 41.8 44.5 VR = 2 V, f = 1 MHz 29.4 31.85 34.2 VR = 25 V, f = 1 MHz 2.5 27 2.85 VR = 28 V, f = 1 MHz 2.4 2.55 2.75 11 11.8 12.5 16.4 17.5 Capacitance ratio CT2/C T25 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 15.2 VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) ∆CT/C T - - 2 % rs - 0.6 0.75 Ω Ls - 1.8 - nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-09-1998 1998-11-01 BB 644 Diode capacitance CT = f (V R) f = 1MHz 70 pF 60 CT 55 50 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25 V 35 VR Semiconductor Group Semiconductor Group 33 Jul-09-1998 1998-11-01