NTMFS4933N D

NTMFS4933N
Power MOSFET
30 V, 210 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Improve Conduction and Overall Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
Applications
• OR−ing FET, Power Load Switch, Motor Control
• Refer to Application Note AND8195/D for Mounting Information
End Products
V(BR)DSS
RDS(ON) MAX
1.2 mW @ 10 V
30 V
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
34
A
TA = 25°C
Continuous Drain
Current RqJA
(Note 1)
ID
TA = 100°C
S (1,2,3)
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.74
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
43
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
Steady
State
TA = 25°C
PD
ID
7.3
20
12.5
PD
1.06
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
210
A
TC =100°C
132
TC = 25°C
PD
104
W
TA = 25°C, tp = 10 ms
IDM
400
A
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
95
A
dV/dt
4.4
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 58 Apk, L = 0.3 mH, RG = 25 W)
EAS
504
mJ
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm2 [1 oz])
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 8
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4933N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Drain to Source DV/DT
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
A
TA = 25°C
Operating Junction and Storage
Temperature
MARKING
DIAGRAM
W
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
N−CHANNEL MOSFET
27
TA = 100°C
Power Dissipation
RqJC (Note 1)
G (4)
21.5
TA = 100°C
210 A
2.0 mW @ 4.5 V
• Server, UPS, Fault−Tolerant Power Systems, Hot Swap
Parameter
ID MAX
1
Device
Package
Shipping†
NTMFS4933NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4933NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4933N/D
NTMFS4933N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
1.1
Junction−to−Ambient – Steady State (Note 3)
RqJA
45.6
Junction−to−Ambient – Steady State (Note 4)
RqJA
117.5
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
17.13
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm2 [1 oz])
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.6
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
gFS
ID = 30 A
0.9
ID = 15 A
0.9
ID = 30 A
1.5
ID = 15 A
1.5
VDS = 1.5 V, ID = 15 A
82
mV/°C
1.2
2.0
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
10930
VGS = 0 V, f = 1 MHz, VDS = 15 V
3230
CRSS
92
Total Gate Charge
QG(TOT)
62.1
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 4.5 V, VDS = 15 V; ID = 30 A
15.7
27
pF
nC
10.1
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
148
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
31
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
33
47
23
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4933N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
20
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
26
ns
88.6
22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.82
TJ = 125°C
0.68
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
73.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
35.9
ns
37.6
QRR
117
nC
Source Inductance
LS
0.50
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
1.1
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.2
W
NTMFS4933N
TYPICAL CHARACTERISTICS
3.8 V to
10 V
200
180
220
TJ = 25°C
3.4 V
VGS = 3.2 V
140
3.0 V
120
100
2.8 V
80
60
2.6 V
40
2.4 V
2.2 V
20
0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
0
1
2
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS = 10 V
200
180
160
140
120
100
TJ = 125°C
80
60
TJ = 25°C
40
TJ = −55°C
20
0
4
1
0.0027
0.0023
3.5
4
0.0016
VGS = 4.5 V
0.0015
0.0019
0.0014
0.0017
0.0013
0.0015
0.0012
0.0013
0.0011
0.0011
VGS = 10 V
0.0010
0.0009
0.0009
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
0.0008
20
40
60
80
100
120
140
160
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
3
TJ = 25°C
0.0017
0.0021
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2.5
0.0018
ID = 30 A
TJ = 25°C
0.0025
0.0007
2
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
1.5
−50
−25
0
25
50
75
100
125
150
10000
TJ = 150°C
TJ = 125°C
1000
TJ = 85°C
100
10
5
TJ, JUNCTION TEMPERATURE (°C)
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4933N
Ciss
C, CAPACITANCE (pF)
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
TJ = 25°C
VGS = 0 V
Coss
Crss
0
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30
10
9
7
5
4
QGD
2
VDD = 15 V
VGS = 10 V
ID = 30 A
1
0
0
20
40
60
80
100
120
QG, TOTAL GATE CHARGE (nC)
140
30
ID, DRAIN CURRENT (A)
VGS = 0 V
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
tf
100
tr
td(on)
10
1
10
15
TJ = 25°C
10
5
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
10
1 ms
10 ms
0 V ≤ VGS ≤ 20 V
SINGLE PULSE
TA = 25°C
TJ = 150°C
0.01
0.01
TJ = 125°C
RG, GATE RESISTANCE (W)
100
0.1
20
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
1
25
0
0.4
100
100 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
t, TIME (ns)
QGS
3
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
10000
ID, DRAIN CURRENT (A)
QT
6
Figure 7. Capacitance Variation
1
TJ = 25°C
8
100
520
480
440
400
360
320
280
240
200
160
120
80
40
0
ID = 58 A
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
1.0
NTMFS4933N
TYPICAL CHARACTERISTICS
100
D = 0.5
0.2
0.1
10
0.02
0.01
1
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
GFS (S)
r(t)
(°C/W)
0.05
260
240
220
200
180
160
140
12
100
80
60
40
20
0
0
10
20
30
40
50
ID (A)
60
70
Figure 14. GFS vs. ID
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6
80
90
100
100
1000
NTMFS4933N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTMFS4933N/D