SPN01N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3 2 1 Type Package Ordering Code Marking SPN01N60C3 SOT-223 Q67040-S4208 01N60C3 VPS05163 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TA = 25 °C 0.3 TA = 70 °C 0.2 Pulsed drain current, tp limited by Tjmax TA = 25 °C ID puls 1.6 Gate source voltage static VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T A = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C Rev. 2.2 Page 1 V 2005-02-21 SPN01N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, ID = 0.8 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. - 35 - @ min. footprint - 110 75 @ 6 cm2 cooling area 1) - - 72 - - 260 Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A Values Unit min. typ. max. 600 - - - 700 - 2.3 3 3.7 V breakdown voltage Gate threshold voltage VGS(th) ID=250µΑ, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Rev. 2.2 µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 V GS=30V, VDS=0V - - 100 Ω V GS=10V, ID=0.5A, Tj=25°C - 5.5 6 Tj=150°C - 15.1 - Page 2 nA 2005-02-21 SPN01N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*RDS(on)max, Values Unit min. typ. max. - 0.45 - S pF ID=0.2A Input capacitance Ciss VGS=0V, VDS=25V, - 100 - Output capacitance Coss f=1MHz - 40 - Reverse transfer capacitance Crss - 2.5 - Turn-on delay time td(on) VDD=350V, VGS =0/10V, - 45 - Rise time tr ID=0.3A, R G=100Ω - 30 - Turn-off delay time td(off) - 60 90 Fall time tf - 30 45 - 0.9 - - 2.2 - - 3.9 5 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=350V, ID=0.3A VDD=350V, ID=0.3A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=0.3A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.2 Page 3 2005-02-21 SPN01N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous Symbol IS Conditions TA=25°C Values Unit min. typ. max. - - 0.3 - - 1.6 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 0.85 1.05 V Reverse recovery time trr VR=350V, IF =IS , - 200 340 ns Reverse recovery charge Qrr di F/dt=100A/µs - 0.45 - µC Rev. 2.2 Page 4 2005-02-21 SPN01N60C3 1 Power dissipation 2 Safe operating area Ptot = f (TA) ID = f ( V DS ) parameter : D = 0 , T A=25°C 1.9 10 1 SPN01N60C3 W A 1.6 10 0 1.2 ID Ptot 1.4 1 10 -1 0.8 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10ms DC 0.6 10 -2 0.4 0.2 0 0 20 40 60 80 100 120 °C 10 -3 0 10 160 10 1 10 2 10 V VDS TA 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 2 2.5 20V 10V K/W A 10 7V 1 ID ZthJC 6.5V 10 0 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 1.5 6V 1 5.5V 0.5 5V 10 -2 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 s 10 1 tp Rev. 2.2 0 0 5 10 15 V 25 VDS Page 5 2005-02-21 3 SPN01N60C3 5 Drain-source on-state resistance 6 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 0.2 A, VGS = 10 V parameter: tp = 10 µs 34 SPN01N60C3 2.5 Ω A 24 ID RDS(on) 28 20 1.5 16 1 12 98% 8 0.5 typ 4 0 -60 -20 20 60 °C 100 0 0 180 4 8 12 VGS Tj 20 V 7 Typ. gate charge 8 Forward characteristics of body diode VGS = f (QGate ) parameter: ID = 0.3 A pulsed IF = f (VSD) 16 parameter: Tj , tp = 10 µs 10 1 SPN01N60C3 V SPN01N60C3 A 10 0 0.2 VDS max 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 1 2 3 4 nC 5.5 QGate Rev. 2.2 Page 6 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD 2005-02-21 SPN01N60C3 9 Drain-source breakdown voltage 10 Typ. capacitances V(BR)DSS = f (Tj) C = f (VDS) parameter: V GS=0V, f=1 MHz 720 10 3 SPN01N60C3 pF 680 Ciss 10 660 2 C V(BR)DSS V 640 620 Coss 10 1 600 580 Crss 560 540 -60 -20 20 60 100 °C 10 0 0 180 Tj 10 20 30 40 50 60 70 80 V 100 VDS Definition of diodes switching characteristics Rev. 2.2 Page 7 2005-02-21 SPN01N60C3 SOT-223 Rev. 2.2 Page 8 2005-02-21 SPN01N60C3 Published by Infineon Technologies AG, 81726 Munich, Germany © Infineon Technologies AG 2000 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 Page 9 2005-02-21