INFINEON BGA428_07

D at a S he et , R e v . 2. 2 , N ov e m be r 2 00 7
B G A 4 28
Gain and PCS Low Noise Amplifier
S m a l l S i g n a l D i s c r et e s
Edition 2007-11-06
Published by Infineon Technologies AG,
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
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BGA428
BGA428, Gain and PCS Low Noise Amplifier
Revision History: 2007-11-06, Rev. 2.2
Previous Version: 2002-03-26
Page
Subjects (major changes since last revision)
9
Correction of cross-reference
Trademarks
SIEGET® is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 2.2, 2007-11-06
BGA428
Silicon Germanium Broadband MMIC Amplifier
1
Silicon Germanium Broadband MMIC Amplifier
Feature
• High gain, GMA = 20 dB at 1.8 GHz
• Low noise figure, NF = 1.4 dB at 1.8 GHz
• Prematched
• Ideal for GSM, DCS1800, PCS1900
• Open collector output
• Typical supply voltage: 2.4 - 3 V
• SIEGET®-45 technology
• Pb-free (RoHS compliant) package1)
4
5
6
1
2
3
SOT363
1) Pb-containing package may be available upon special request
9&&
287
,1
*6
*1'
Figure 1
%*$B3LQBFRQQHFWLRQYVG
Pin connection
Description
BGA428 is a high gain, low noise amplifier.
Type
Package
Marking
BGA428
SOT363
PGs
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
Rev. 2.2, 2007-11-06
BGA428
Silicon Germanium Broadband MMIC Amplifier
Maximum Ratings
Table 1
Maximum ratings
Parameter
Symbol
Limit Value
Unit
Device voltage
VCC
Vout
VGS
Iin
Itot
Pin
Ptot
TJ
TOP
TSTG
4
V
4
V
3.5
V
0.5
mA
12
mA
8
dBm
50
mW
150
°C
-40... 85
°C
-65... 150
°C
Voltage at pin Out
Voltage at pin GS
Current into pin In
1)
Total device current
Input power2)
Total power dissipation, TS < 125 °C
3)
Junction temperature
Operating temperature range
Storage temperature range
1) Itot = Current into Out + Current into VCC
2) Valid for:
a) ZL = 50 Ω, ZS = 50 Ω, VCC = 2.7 V, Vout = 2.7 V, VGS = 0.0 V, GND = 0.0 V
b) ZL = 50 Ω, ZS = 50 Ω, VCC = 0.0 V, Vout = 0.0 V, VGS = 2.7 V, GND = 0.0 V
3) TS is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Thermal resistance
Parameter
Symbol
Value
Unit
RthJS
220
Junction - soldering point
1) For calculation of RthJA please refer to Application Note Thermal Resistance
K/W
1)
Data Sheet
5
Rev. 2.2, 2007-11-06
BGA428
Electrical Characteristics
2
Electrical Characteristics
2.1
Electrical characteristics at TA = 25 °C (measured in test circuit specified in
Figure 2), VCC = 2.7 V, Frequency = 1.8 GHz, unless otherwise specified
Table 3
Electrical Characteristics
Parameter
Symbol
Values
Min.
Typ.
GMA
Noise figure (ZS = 50 Ω)
NF
Input power at 1 dB gain compression P-1dB
Input third order intercept point
IIP3
Itot
Total device current
Insertion loss in gain-step-mode
LGS
Maximum available power gain
Unit
Max.
20
dB
1.4
dB
-19
dBm
9
dBm
8.2
mA
13.5
dB
Note /
Test Condition
VCC = 0.0 V,
VCTRL = 2.7 V,
RCRRL = 3 kΩ
R eference Plane
V CTRL
RCTRL =3kΩ
GS
Bias-T
OUT
Out
GND
In
Bias-T
IN
V CC
Reference Plane
47pF
180pF
100nF
Top View
2.7V
BGA428_Test_Circuit.vsd
Figure 2
Data Sheet
Test Circuit for Electrical Characteristics and S-Parameter
6
Rev. 2.2, 2007-11-06
BGA428
Electrical Characteristics
Table 4
S-Parameter at 2.7 V (see Electrical Characteristics for conditions)
Frequency
[GHz]
S11
Mag
S11
Ang
S21
Mag
S21
Ang
S12
Mag
S12
Ang
S22
Mag
S22
Ang
0.100
0.6756
-31.7
58.775
-19.6
0.0005
153.5
0.9491
-3.9
0.200
0.5936
-53.6
47.806
-43.1
0.0014
138.4
0.9327
-6.3
0.300
0.5150
-71.4
39.232
-59.5
0.0021
119.0
0.9174
-8.3
0.400
0.4587
-86.6
31.740
-71.8
0.0028
104.9
0.9035
-10.3
0.600
0.4004
-110.7
23.868
-89.6
0.0042
105.9
0.8807
-14.0
0.800
0.3743
-129.1
18.509
-103.2
0.0063
94.3
0.8593
-17.7
1.000
0.3743
-143.0
14.825
-114.5
0.0082
92.4
0.8352
-21.4
1.200
0.3816
-154.5
12.288
-124.7
0.0093
87.2
0.8116
-25.1
1.400
0.3922
-164.4
10.353
-134.2
0.0110
85.3
0.7865
-28.7
1.600
0.4086
-1.72.4
8.879
-143.2
0.0132
79.4
0.7597
-32.2
1.800
0.4265
-178.9
7.732
-151.4
0.0141
79.4
0.7309
-36.0
1.900
0.4314
-178.8
7.214
-155.2
0.0146
76.1
0.7199
-37.5
2.000
0.4371
176.1
6.771
-159.1
0.0150
77.0
0.7097
-39.1
2.200
0.4505
171.2
5.976
-166.6
0.0169
75.2
0.6791
-42.3
2.400
0.4640
167.2
5.298
-173.5
0.0181
73.2
0.6593
-45.6
3.000
0.4935
155.9
3.935
167.0
0.0217
68.3
0.5925
-53.3
4.000
0.5181
141.2
2.605
139.2
0.0282
65.1
0.5284
-64.9
5.000
0.5202
126.9
1.911
113.6
0.0319
62.2
0.4829
-75.1
6.000
0.5128
110.0
1.479
89.9
0.0489
56.0
0.4323
-81.7
Data Sheet
7
Rev. 2.2, 2007-11-06
BGA428
Electrical Characteristics
2.2
Application Circuit Characteristics (measured in test circuit specified in
Figure 3), TA = 25 °C,VCC = 2.7 V, Frequency = 1.85 GHz, unless otherwise
specified
Table 5
Application Circuit Characteristics
Parameter
Symbol
Values
Min.
Typ.
|S21|2
Noise figure (ZS = 50 Ω)
NF
Input power at 1 dB gain compression P-1dB
Input third order intercept point
IIP3
Itot
Total device current
Insertion loss in gain-step-mode
LGS
Insertion power gain
Unit
Max.
19
dB
1.4
dB
-19
dBm
-9
dBm
8.2
mA
13.5
dB
Note /
Test Condition
VCC = 0.0 V,
VCTRL = 2.7 V,
RCRRL = 3 kΩ
47pF 180pF
Supply
3kΩ
GS
Vcc
VCTRL
3.9nH
RFin
150pF
In
BGA428
Out
0.9pF
RFout
GND
BGA428_Application_Circuit.vsd
Figure 3
Data Sheet
Application Circuit for 1850 MHz
8
Rev. 2.2, 2007-11-06
BGA428
Measured Parameters
3
Measured Parameters
Refer to the application circuit given in Figure 3
2
2
Power Gain |S21| =f(f)
V = 2.7V, V =2.7V
CC
Power Gain |S21| =f(f)
V = 2.7V, V =2.7V
Out
CC
20
23
15
22
10
21
5
Insertion Gain [dB]
Insertion Gain [dB]
Out
0
−5
20
19
18
−10
17
−15
16
−20
−25
0
1
2
3
4
5
15
1.7
6
1.8
Frequency [GHz]
2
Off−Gain |S | =f(V
)
21
CTRL
V = 0.0V, V =0.0V,R
CC
Out
1.9
2
2.1
2.5
3
Frequency [GHz]
Matching |S11|,|S22|=f(f)
V = 2.7V, V =2.7V
=2.7kΩ
CC
CTRL
−10
Out
0
S
22
−11
−5
−12
1800MHz
S11
−10
−14
|S11|, |S22| [dB]
Insertion Gain [dB]
−13
1990MHz
−15
−16
−15
−20
−17
−18
−25
−19
−20
−30
2
2.2
2.4
2.6
V
CTRL
Data Sheet
2.8
3
3.2
1
1.5
2
Frequency [GHz]
[V]
9
Rev. 2.2, 2007-11-06
BGA428
Measured Parameters
Input Compression Point P−1dB=f(f)
Device Current I=f(ϑ)
V =2.7V, V =2.7V
CC
−16.5
Out
9
8.8
−17
−17.5
8.4
Device Current [mA]
Input Compression Point [dBm]
8.6
VCC=2.7V
−18
−18.5
VCC=2.85V
8.2
8
7.8
7.6
−19
V =2.4V
CC
7.4
−19.5
7.2
−20
1800
1850
1900
1950
7
−20
2000
Frequency [MHz]
0
20
40
60
80
Temperature [°C]
2
Insertion Gain |S | =f(ϑ)
21
VCC=2.7V, VOut=2.7V
25
24
23
22
|S21|2 [dB]
21
f=1800MHz
20
19
f=1990MHz
18
17
16
15
−20
0
20
40
60
80
Temperature [°C]
Data Sheet
10
Rev. 2.2, 2007-11-06
BGA428
Package Information
4
Package Information
2 ±0.2
0.9 ±0.1
+0.1
0.2 -0.05
6x
0.1
0.1 MAX.
M
0.1
Pin 1
marking
1
2
3
A
1.25 ±0.1
4
0.1 MIN.
5
2.1 ±0.1
6
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
GPS05604
Figure 4
Package Outline SOT363
0.2
2.3
8
4
Pin 1
marking
Figure 5
Data Sheet
1.1
2.15
CSOG5902
Tape for SOT363
11
Rev. 2.2, 2007-11-06