INFINEON BGA715L7

Data Sheet, Rev.2.1, October 2009
BGA715L7
Silicon Germanium GPS Low Noise Amplifier
Small Signal Discretes
Edition 2009-10-9
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
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BGA715L7
BGA715L7
Revision History: 2009-10-9, Rev.2.1
Previous Version: 2008-09-12, Rev.2.0
Page
Subjects (major changes since last revision)
5
Ambient temperature range is extended down to -40°C
Data Sheet
3
Rev.2.1, 2009-10-9
BGA715L7
Silicon Germanium GPS Low Noise Amplifier
1
Silicon Germanium GPS Low Noise Amplifier
Features
• High gain: 20 dB
• Low Noise Figure: 0.7 dB
• Low current consumption: 3.3 mA
• Supply voltage: 1.5 V to 3.3 V
• High input compression point -15.5 dBm at 1.8 V supply
• High input 3rd intercept point -7 dBm at 1.8 V supply
• B7HFM Silicon Germanium technology
• RF output internally matched to 50 Ω
• Low external part count
• 2kV HBM ESD protection (including AI-pin)
• Tiny TSLP-7-1 leadless package
• Moisture sensitivity level: MSL 1
• Pb-free (RoHS compliant) package
6
5
4
7
1
2
3
TSLP-7-1
Application
• 1575 MHz GPS, Galileo, GPS phone
VCC PON
BIAS
BIAS
AI
AO
ESD
VSS
GND
Figure 1
Blockdiagram
2
Description
The BGA715L7 is a front-end low noise amplifier for Global Positioning System (GPS) applications. The LNA
provides 20 dB gain, 0.7 dB noise figure and high linearity performance in the application configuration described
in Chapter 4. Current consumption is as low as 3.3 mA. The BGA715L7 is based upon Infineon Technologies‘
B7HFM Silicon Germanium technology. It operates over a 1.5 V to 3.3 V supply range.
If an ultra low noise figure of 0.6 dB is required, please refer to Infineon BGA715L7 Application Note AN161.
Data Sheet
4
Rev.2.1, 2009-10-9
BGA715L7
Description
Type
Package
Marking
BGA715L7
TSLP-7-1
UG
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Symbol
Function
1
AI
LNA input
2
BIAS
DC bias
3
GND
RF ground
4
PON
Power on control
5
VCC
DC supply
6
AO
LNA output
7
VSS
DC ground
Maximum Ratings
Table 2
Parameter
Maximum Ratings
1)
Symbol
VCC
Voltage at pin AI
VAI
Voltage at pin BIAS
VBIAS
Voltage at pin AO
VAO
Voltage at pin PON
VPON
Voltage at pin GND
VGND
Current into pin VCC
ICC
RF input power
PIN
Total power dissipation
Ptot
Junction temperature
TJ
Ambient temperature range
TA
Storage temperature range
TSTG
2)
Human Body Model ESD capability, all pin to all pin VESD_HBM
3)
Machine Model ESD capability, all pin to all pin
VESD_MM
Voltage at pin VCC
Value
Unit
-0.3 ... 3.6
V
-0.3 ... 0.9
V
-0.3 ... 0.9
V
-0.3 ... VCC+ 0.3
V
-0.3 ... VCC+ 0.3
V
-0.3 ... 0.3
V
10
mA
10
dBm
36
mW
150
°C
-40 ... 85
°C
-65 ... 150
°C
2000
V
100
V
1) All voltages refer to VSS-Node.
2) According to JEDS22A-114
3) According to JEDS22A-115
Thermal resistance
Table 3
Thermal resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
RthJS
159
1) For calculation of RthJA please refer to Application Note Thermal Resistance
K/W
1)
Data Sheet
5
Rev.2.1, 2009-10-9
BGA715L7
Electrical Characteristics
3
Electrical Characteristics
Table 4
Electrical Characteristics1): TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1575 MHz
Parameter
Symbol
VCC
ICC
Supply voltage
Supply current
Gain switch control voltage
Gain switch control current
Vpon
Ipon
Values
Note / Test Condition
Min.
Typ.
Max.
1.5
1.8
3.6
V
-
3.3
-
mA
ON-mode
-
0.2
3
µA
OFF-mode
1.0
-
Vcc
V
ON-mode
0
-
0.4
V
OFF-mode
-
5
µA
ON-mode
1
µA
OFF-mode
2
Unit
|S21|
-
20
-
dB
High-gain Mode
NF
RLin
RLout
1/|S12|2
tS
-
0.7
-
dB
ZS = 50 Ω
-
14
-
dB
-
13
-
dB
-
43
-
dB
-
5
-
µs
OFF- to ON-mode
-
5
-
µs
ON- to OFF-mode
Inband input 1dB compression IP1dB
point
-
-15.5
-
dBm
Inband input 3rd order intercept IIP3
point4)
-
-7
-
dBm
-
>1
-
Power gain
Noise figure
2)
Input return loss
Output return loss
Reverse isolation
3)
Power gain settling time
Stability
k
f1 = 1575 MHz
f2 = f1 +/-1 MHz
f = 20 MHz ... 20 GHz
1) Measured on BGA715L7 application board according to application schematic on page 7, including PCB losses (unless
noted otherwise)
2) PCB tranmission line- and connector losses of 0.05dB are subtracted
3) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
4) Input Power = -30 dBm for each tone
Data Sheet
6
Rev.2.1, 2009-10-9
BGA715L7
Application Information
4
Application Information
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Figure 2
Application Schematic BGA715L7
BGA715 L7_appboard .vsd
Figure 3
Application Board Drawing BGA715L7
Table 5
Bill of Materials
Name
Value
Package
Manufacturer
Function
C1
1.8 pF
0402
Various
DC blocking and input
matching
C2
1 µF
0402
Various
RF block
C4
15 pF
0402
Various
RF block
L1
4.7 nH
LQW15A series
0402
Murata
Bias feed and input matching
N1
BGA715L7
TSLP-7-1
Infineon
SiGe LNA
A list of all application notes is available at http://goto.infineon.com/smallsignaldiscretes-appnotes.
Data Sheet
7
Rev.2.1, 2009-10-9
BGA715L7
Package Information
Package Information
Top view
Bottom view
0.4
+0.1
1.3 ±0.05
0.05 MAX.
1 ±0.05
6
1.7 ±0.05
1.2 ±0.035 1)
7
3
Pin 1 marking
2
1
6 x 0.2 ±0.035 1)
1) Dimension applies to plated terminal
TSLP-7-1-PO V04
Package Dimensions for TSLP-7-1
NSMD
SMD
Solder mask
0.2
0.3
R0.1
0.3
0.2
0.2
0.25
0.25
1.9
0.2
0.25
1.9
1.9
0.25
0.3
Copper
0.25
0.2
0.2
0.25
0.2
0.2
0.3
0.2
0.2
1.9
0.3
1.4
0.2
1.4
0.2
1.4
0.2
1.4
0.3
Stencil apertures
Copper
Solder mask
0.2
Figure 4
2 ±0.05
5
6 x 0.2 ±0.035 1)
4
1.1 ±0.035 1)
5
0.25
0.25
R0.1
Stencil apertures
TSLP-7-1-FP V01
Figure 5
Footprint TSLP-7-1
0.5
8
2.18
4
Pin 1
marking
Figure 6
Data Sheet
1.45
TSLP-7-1-TP V03
Tape & Reel Dimensions (Ø reel 180, pieces/reel 7500)
8
Rev.2.1, 2009-10-9