IL211A/212A/213A N EW PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES • High Current Transfer Ratio IL211A—20% Minimum IL212A—50% Minimum IL213A—100% Minimum • Isolation Voltage, 2500 VACRMS • Electrical Specifications Similar to Standard 6 Pin Coupler • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available in Tape and Reel Option (Conforms to EIA Standard RS481A) • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL211A/212A/213A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211A//212A/213A comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20, 50, and 100% minimum CTR at IF=10 mA makes these optocouplers suitable for a variety of different applications. Dimensions in inches (mm) .120±.005 (3.05±.13) .240 (6.10) Anode 1 .154±.005 Cathode 2 CL (3.91±.13) NC 3 NC 4 .016 (.41) Pin One ID .192±.005 (4.88±.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53) .020±.004 (.15±.10) 2 plcs. R.010 (.25) max. Lead Coplanarity ±.0015 (.04) max. Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage VF 1.3 1.5 V IF=10 mA Reverse Current IR 0.1 100 µA VR=6.0 V Capacitance CO 25 pF VR=0 Breakdown Voltage BVCEO BVECO 30 7 V V IC=10 µA IE=10 µA Dark Current, Collector-Emitter ICEOdark 5 nA VCE=10 V IF=0 Capacitance, Collector-Emitter CCE 10 pF VCE=0 % IF=10 mA, VCE=5 V Detector 50 Package Emitter Peak Reverse Voltage .....................................6.0 V Continuous Forward Current .........................60 mA Power Dissipation at 25°C............................90 mW Derate Linearly from 25°C......................1.2 mW/°C DC Current Transfer Ratio IL211A IL212A IL213A CTRDC Saturation Voltage, Collector-Emitter VCEsat Isolation Test Voltage VIO Capacitance, Input toOutput CIO 0.5 pF Resistance, Input to Output RIO 100 GΩ Switching Time ton,toff 3.0 µs Package Total Package Dissipation at 25°C Ambient (LED + Detector) ....................................280 mW Derate Linearly from 25°C......................3.3 mW/°C Storage Temperature ...................–55°C to +150°C Operating Temperature ...............–55°C to +100°C Soldering Time at 260°C ............................. 10 sec. .125±.005 (3.18±.13) 5° max. Maximum Ratings Detector Collector-Emitter Breakdown Voltage...............30 V Emitter-Collector Breakdown Voltage.................7 V Collector-Base Breakdown Voltage..................70 V Power Dissipation ......................................150 mW Derate Linearly from 25°C2.0 mW/°C NC Base Collector Emitter 7° .058±.005 (1.49±.13) 40° .015±.002 (.38±.05) .008 (.20) 8 7 6 5 5–1 20 50 100 50 80 130 0.4 2500 IF=10 mA, IC=2.0 mA VACRMS IC=2 mA, RE=100 Ω, VCE=10 V Figure 5. Normalized collector-base photocurrent versus LED current Figure 1. Forward voltage versus forward current 1.4 Vf-Forward Voltage - V NIcb - Normalized Icb 10 1.3 Ta = -55°C 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 100°C 0.8 1 10 If- Forward Current - mA 100 Figure 2. Normalized non-saturated and saturated CTRce versus LED current Vce = 5 V Vce = 0.4 V 10 Vcb = 9.3 V 100 10 1 .1 0.0 1 .1 100 1 Iceo - Collector-Emitter - nA Ice - Collector-emitter Current - mA Ta = 25°C Vce = 10 V 100 50 Vce = 0.4 V 0 1 10 IF - LED Current - mA 100 Figure 4. Normalized collector-base photocurrent versus LED current .1 1 10 IF - LED Current - mA 4 103 102 Vce = 10V 101 100 TYPICAL 10-1 10-2 -20 0 20 40 60 80 100 Ta - Ambient Temperature - °C 2.0 1 .1 10 5 Figure 8. Normalized saturated HFE versus base current and temperature Normalized to: Vcb = 9.3 V IF = 1 mA Ta = 25 °C 10 10 NHFE(sat) - Normalized Saturated HFE NIcb - Normalized Icb 100 100 Figure 7. Collector-emitter leakage current versus temperature g p Figure 3. Collector-emitter current versus LED current .1 10 I F - LED Current - mA IF - LED Current - mA 150 100 Ta = 25°C 0.5 .1 1 10 IF - LED Current - mA 1000 Normalized to: Vce = 10 V IF = 10 mA Ta = 25 °C 1.0 .1 Figure 6. Collector-base photocurrent versus LED current Icb - Collector-base Current - µA NCTRce - Normalized CTRce 1.5 1 .01 .1 0.7 .1 Normalized to: Vcb = 9.3 V IF = 10 mA Ta = 25 °C 100 70°C 50°C 25°C 1.5 Normalized to: Ib = 20µA Vce = 10 V Ta = 25 °C 1.0 Vce = 0.4 V 0.5 0.0 1 10 100 Ib - Base Current - µA 1000 IL211A/212A/213A 5–2 Figure 9. Typical switching characteristics versus base resistance (saturated operation) Figure 10. Typical switching times versus load resistance 1000 Input: IF =10mA 50 Pulse width=100 mS Duty cycle=50% Switching time (µS) Switching time (µs) 100 F T OF 10 5 TON Input: 500 IF=10 mA Pulse width=100 mS Duty cycle=50% 100 50 10 10K 50K 100K 500K 1M TON 5 1 1.0 FF TO 0.1 0.5 1 5 10 50 100 Load resistance RL (KΩ) Base-emitter resistance, RBE (Ω) IL211A/212A/213A 5–3