Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Application specific optimisation of inverse diode • Pb-free lead plating; RoHS compliant C G E PG-TO-247-3 Applications: • Microwave Oven • Soft Switching Applications for ZCS Type IHW30N90R VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 900V 30A 1.5V 175°C H30R90 PG-TO-247-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value Unit 900 V A 60 30 TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax ICpuls 90 Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C - 90 Diode forward current IF 60 30 TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax IFpuls 90 Gate-emitter voltage VGE ±20 Transient Gate-emitter voltage (tp < 5 ms) V ±25 454 W Tj -40...+175 °C Storage temperature Tstg -55...+175 °C Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Power dissipation, TC = 25°C Ptot Operating junction temperature 1 260 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.2 Nov 08 IHW30N90R q Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.33 K/W RthJCD 0.33 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, 40 RthJA junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 900 - - T j = 25°C - 1.5 1.7 T j = 150 °C - 1.6 - T j = 175 °C - 1.7 - T j = 25°C - 1.4 1.6 T j = 150 °C - 1.4 - T j = 175 °C - 1.45 - 5.1 5.8 6.4 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.5mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V G E = 15 V, I C =30A VGE=0V, IF=30A Gate-emitter threshold voltage VGE(th) I C =700 μA,V C E =V G E Zero gate voltage collector current ICES V C E = 90 0 V , VGE=0V Gate-emitter leakage current Power Semiconductors IGES V μA T j = 25°C - - 5 T j = 150 °C - - 2500 V C E = 0 V ,V G E =20V - - 600 2 nA Rev. 2.2 Nov 08 IHW30N90R q Soft Switching Series Dynamic Characteristic Input capacitance Ciss V C E =25V, - 2889 - Output capacitance Coss VGE=0V, - 83 - Reverse transfer capacitance Crss f=1MHz - 79 - Gate charge QGate V C C = 72 0 V, I C =30A - 200 - nC - 13 - nH pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. Max. Unit IGBT Characteristic Turn-off delay time td(off) T j = 25°C - 511 - Fall time tf V C C = 60 0 V, - 24 - Turn-on energy Eon I C =30A, - - - Turn-off energy Eoff V G E = 0 /1 5 V, - 1.46 - Total switching energy Ets R G = 1 5Ω - 1.46 - mJ Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. Unit IGBT Characteristic Turn-off delay time td(off) T j = 175 °C - 594 - Fall time tf V C C = 60 0 V, - 46 - Turn-on energy Eon I C =30A, - - - Eoff V G E = 0 /1 5 V, - 2.1 - Ets R G = 1 5Ω - 2.1 - Turn-off energy Total switching energy Power Semiconductors 3 mJ Rev. 2.2 Nov 08 IHW30N90R q Soft Switching Series tp=1µs 10µs 80A 20µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT TC=80°C 60A TC=110°C 40A Ic 20A 50µs 10A 200µs 1ms 1A DC 0A 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15Ω) 400W 50A IC, COLLECTOR CURRENT Ptot, DISSIPATED POWER 350W 300W 250W 200W 150W 100W 40A 30A 20A 10A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) 4 Rev. 2.2 Nov 08 IHW30N90R q Soft Switching Series 80A 70A 13V 60A 11V 50A 9V 40A 7V 30A 20A 0A 0.0V 0.5V 1.0V 1.5V 2.0V 13V 60A 11V 50A 9V 40A 7V 30A 20A 0A 0.0V 2.5V 60A 50A 40A 30A TJ=175°C 20A 25°C 10A 0V 2V 4V 6V 8V 1.0V 1.5V 2.0V 2.5V IC=60A 2.0V IC=30A 1.5V IC=15A 1.0V 0.5V 0.0V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 0.5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 15V 10A 10A 0A VGE=20V 70A 15V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A VGE=20V 5 Rev. 2.2 Nov 08 IHW30N90R q Soft Switching Series 1000ns 1000ns td(off) t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns 100ns tf tf 0A 10A 20A 30A 40A 10ns 50A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=15Ω, Dynamic test circuit in Figure E) 20Ω 30Ω 40Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE 1000ns t, SWITCHING TIMES td(off) 100ns tf 25°C 50°C 7V 6V 5V max. typ. 4V 3V min. 75°C 100°C 125°C 2V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=15Ω, Dynamic test circuit in Figure E) Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA) 6 Rev. 2.2 Nov 08 Soft Switching Series IHW30N90R q E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 4.0mJ Eoff 3.0mJ 2.0mJ 1.0mJ 0.0mJ 3.0mJ Eoff 2.0mJ 1.0mJ 0.0mJ 0A 10A 20A 30A 40A 20Ω 50A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=15Ω, Dynamic test circuit in Figure E) 30Ω 40Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E) Eoff E, SWITCHING ENERGY LOSSES 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 25°C 50°C 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=15Ω, Dynamic test circuit in Figure E) Power Semiconductors 7 Rev. 2.2 Nov 08 IHW30N90R q Soft Switching Series 1nF 180V 10V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 720V 5V Crss 0V 0nC 50nC 100nC 150nC 200nC 10pF 250nC D=0.5 -1 10 K/W 0.2 R,(K/W) 0.0395 0.1559 0.1075 0.0275 0.1 0.05 0.02 R1 τ, (s) -1 1.10*10 -2 1.43*10 -4 8.67*10 -4 1.09*10 R2 0.01 -2 10 K/W 10µs single pulse 100µs 1ms C1= τ1/R1 10ms C2= τ2/R2 100ms 10V 20V D=0.5 -1 10 K/W 0.2 0.1 0.05 0.02 0.01 R,(K/W) 0.0842 0.1202 0.0877 0.0385 R1 τ, (s) -2 6.67*10 -3 9.59*10 -4 7.33*10 -5 8.56*10 R2 -2 10 K/W 10µs tP, PULSE WIDTH Figure 18. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) ZthJC, TRANSIENT THERMAL RESISTANCE QGE, GATE CHARGE Figure 16. Typical gate charge (IC=30 A) ZthJC, TRANSIENT THERMAL RESISTANCE Coss 100pF single pulse 100µs 1ms C1=τ1/R1 C2=τ2/R2 10ms 100ms tP, PULSE WIDTH Figure 19. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T) 8 Rev. 2.2 Nov 08 Soft Switching Series IHW30N90R q IF=60A 50A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 2.0V 40A 30A TJ=25°C 20A 175°C 1.5V 15A 1.0V 0.5V 10A 0A 30A 0.0V 0.5V 1.0V 1.5V 0.0V 2.0V VF, FORWARD VOLTAGE Figure 20. Typical diode forward current as a function of forward voltage Power Semiconductors 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 21. Typical diode forward voltage as a function of junction temperature 9 Rev. 2.2 Nov 08 Soft Switching Series IHW30N90R q PG-TO247-3 M M MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 5.44 3 19.80 4.17 3.50 5.49 6.04 Power Semiconductors MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 5 5 7.5mm 0.214 3 20.31 4.47 3.70 6.00 6.30 0.780 0.164 0.138 0.216 0.238 10 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Rev. 2.2 Nov 08 IHW30N90R q Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors Figure E. Dynamic test circuit 11 Rev. 2.2 Nov 08 Soft Switching Series IHW30N90R q Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.2 Nov 08