INFINEON IL485

IL485
OPTICALLY COUPLED
HIGH SPEED MOSFET DRIVERS
OPTOCOUPLER
FEATURES
• Fast Turn On
• Fast Turn Off
• Low Input Current
• Isolation Test Voltage, 5300 VACRMS
APPLICATIONS
• Motor Drive Controls
• IGBT-predrivers
• AC/DC Power Inverters
DESCRIPTION
The IL485 is a photovoltatic generator (optically coupled) designed to drive highly capacitive loads such
as the gate of a power MOSFET transistor and at the
same time provide isolation and floating voltage supply capability. The coupler consists of a GaAlAs light
emitting diode as input control and a custom photo IC
chip with photodiode arrary (PDA) as output device.
When the LED is turned on, the emitted light produces a voltage in the PDA. The output of the PDA is
used to drive the gate of a power MOSFET. The photo
IC chip contains additional circuitry to enhance the
switching speeds, (both turn on turn off). The optocoupler is packaged in a 6 pin DIP.
Dimensions in inches (mm)
Pin One ID.
3
2
1
.248 (6.30)
.256 (6.50)
4
5
A 1
6 –out
K 2
5 B
6
4 +out
3
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
Typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
Typ.
.130 (3.30)
.150 (3.81)
18° Typ.
.020 (.051) Min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.300 (7.62)
.347 (8.82)
Maximum Ratings
Emitter
Reverse Voltage ..................................................................................4 V
Forward Current ..............................................................................60 mA
Peak Forward Current....................................................................600 mA
Power Dissipation.........................................................................100 mW
Thermal Resistance....................................................................700 °C/W
Detector
Breakdown Voltage (pin 5 to 6) ........................................................300 V
Peak Input Current (pin 5 to 4) ........................................................50 mA
Reverse Current (pin 5 to 6, V=100 V) ...........................................200 nA
Power Dissipation (pin 5 to 4) ......................................................150 mW
Package
Insulation Thickness between Emitter and Detector ...................≥0.4 mm
Isolation Test Voltage (1 sec.)..............................................5300 VACRMS
Isolation Resistance
VIO=500 V, TA=25°C.................................................................. ≥1012 Ω
VIO=500 V, TA=100°C............................................................... ≥1011 Ω
Comparative Tracking Index per
DIN IEC 112/VDE 303, Part 1.........................................................≥175
Total Power Dissipation ................................................................250 mW
Storage Temperature Range ..........................................–55°C to +150°C
Operating Temperature Range.......................................–55°C to +100°C
Junction Temperature ...................................................................... 100°C
Soldering Temperature (max. 10 sec.,
dip soldering distance to seating plane >1.5 mm)...................... 260°C
5–1
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max. Unit
Condition
LED Forward Voltage
VF
0.9
1.5
2.1
V
IF=10 mA
LED Junction Capacitance
CJ
pF
VR=0 V, f=1 MHz
13
V
IZT=10 µA
11
V
CL=2000 pF, VB=20 V
IF=10 mA
5
15
mA
mA
300
20
Ω
Ω
Input — Emitter
25
MOSFET Driver Output with External Biasing (see Figure 1 and Figure 3)
Zener Voltage (pin 4 to 6)
VZ
Dynamic Output Voltage (pin 4 to 6)
VOUT
Dynamic Output Current (pin 4 to 6)
IOUT
9
CL=2000 pF, VB=20 V
IF=10 mA
IF=40 mA
Dynamic Output Resistance
Sourcing (pin 4)
Sinking (pin 4)
ROUT
IF=10 mA
Turn-on Time
tON
3.5
5
µs
CL=2000 pF, IF=40 mA
Measure at VOUT=5 V, VB=20 V
Turn-off Time
tOFF
3.5
5
µs
CL=2000 pF, IF=40 mA
Measure at VOUT=2 V, VB=20 V
MOSFET Driver Output without External Biasing (see Figure 2 and Figure 3)
Output Open Circuit Voltage (pin 4 to 6)
VOC
Output Short Circuit Current (pin 4 to 6)
ISC
7
10
V
IF=10 mA
2.1
8.4
4
16
µA
µA
IF=10 mA
IF=40 mA
Ω
IF=10 mA
Dynamic Output Resistance Sinking (pin 4)
ROUT
20
Turn-on Time
tON
650
1000
µs
CL=2000 pF (see Figure 3)
Measure at VOUT=5 V, IF=40 mA
Turn-off Time
tOFF
3
5
µs
CL=2000 pF (seeFigure 3)
Measure at VOUT=2 V, IF=40 mA
MOSFET Driver Output Switching Speed (see Figure 3, Figure 4, Figure 5)
Rise time
tR
500
ns
Turn-on Time
tON
3.5
µs
Fall time
tF
300
ns
Turn-off Time
tOFF
3.5
µs
Input-Output CMRR
dv/dt
15 kV
V/µs
VCM=1000 V
Coupling Capacitance
CIO
1
pF
f=1 MHz
M1 Cgs=2000 pF, VS=50 V
Measure at 90%–10% M1 VDS
(see Figure 4)
Package Isolation Characteristics
5–2
IL485
Figure 1. Switching time measurement with external
voltage bias
100Ω
B
IF
Photo
diode
array
2
2
4
Vo
VB
2000 pF
300V
Figure 5. IL485 connected in DC load switching configuration
5 B
2
5
1
ac
100Ω
2
4 Vo
Photo
diode
array
2000 pF
300V
2N2222
CL
M1
4
1KΩ
M2
6
6
3
Vs
6
+5V
Photo
diode
array
Load
3
Figure 2. Switching time measurement
IF
M1
4
1KΩ
6
1
Photo
diode
array
2N2222
CL
3
5
1
+5V
5
1
Figure 4. Switching time measurement without voltage bias
3
Load
ac
Figure 3. IL485 connected in AC load switching
configuration
V out
ton
5V
2V
ILED
t
toff
t
5–3
IL485