IL485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACRMS APPLICATIONS • Motor Drive Controls • IGBT-predrivers • AC/DC Power Inverters DESCRIPTION The IL485 is a photovoltatic generator (optically coupled) designed to drive highly capacitive loads such as the gate of a power MOSFET transistor and at the same time provide isolation and floating voltage supply capability. The coupler consists of a GaAlAs light emitting diode as input control and a custom photo IC chip with photodiode arrary (PDA) as output device. When the LED is turned on, the emitted light produces a voltage in the PDA. The output of the PDA is used to drive the gate of a power MOSFET. The photo IC chip contains additional circuitry to enhance the switching speeds, (both turn on turn off). The optocoupler is packaged in a 6 pin DIP. Dimensions in inches (mm) Pin One ID. 3 2 1 .248 (6.30) .256 (6.50) 4 5 A 1 6 –out K 2 5 B 6 4 +out 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° Typ. .018 (0.45) .022 (0.55) .300 (7.62) Typ. .130 (3.30) .150 (3.81) 18° Typ. .020 (.051) Min. .031 (0.80) .035 (0.90) .100 (2.54) Typ. .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82) Maximum Ratings Emitter Reverse Voltage ..................................................................................4 V Forward Current ..............................................................................60 mA Peak Forward Current....................................................................600 mA Power Dissipation.........................................................................100 mW Thermal Resistance....................................................................700 °C/W Detector Breakdown Voltage (pin 5 to 6) ........................................................300 V Peak Input Current (pin 5 to 4) ........................................................50 mA Reverse Current (pin 5 to 6, V=100 V) ...........................................200 nA Power Dissipation (pin 5 to 4) ......................................................150 mW Package Insulation Thickness between Emitter and Detector ...................≥0.4 mm Isolation Test Voltage (1 sec.)..............................................5300 VACRMS Isolation Resistance VIO=500 V, TA=25°C.................................................................. ≥1012 Ω VIO=500 V, TA=100°C............................................................... ≥1011 Ω Comparative Tracking Index per DIN IEC 112/VDE 303, Part 1.........................................................≥175 Total Power Dissipation ................................................................250 mW Storage Temperature Range ..........................................–55°C to +150°C Operating Temperature Range.......................................–55°C to +100°C Junction Temperature ...................................................................... 100°C Soldering Temperature (max. 10 sec., dip soldering distance to seating plane >1.5 mm)...................... 260°C 5–1 Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Condition LED Forward Voltage VF 0.9 1.5 2.1 V IF=10 mA LED Junction Capacitance CJ pF VR=0 V, f=1 MHz 13 V IZT=10 µA 11 V CL=2000 pF, VB=20 V IF=10 mA 5 15 mA mA 300 20 Ω Ω Input — Emitter 25 MOSFET Driver Output with External Biasing (see Figure 1 and Figure 3) Zener Voltage (pin 4 to 6) VZ Dynamic Output Voltage (pin 4 to 6) VOUT Dynamic Output Current (pin 4 to 6) IOUT 9 CL=2000 pF, VB=20 V IF=10 mA IF=40 mA Dynamic Output Resistance Sourcing (pin 4) Sinking (pin 4) ROUT IF=10 mA Turn-on Time tON 3.5 5 µs CL=2000 pF, IF=40 mA Measure at VOUT=5 V, VB=20 V Turn-off Time tOFF 3.5 5 µs CL=2000 pF, IF=40 mA Measure at VOUT=2 V, VB=20 V MOSFET Driver Output without External Biasing (see Figure 2 and Figure 3) Output Open Circuit Voltage (pin 4 to 6) VOC Output Short Circuit Current (pin 4 to 6) ISC 7 10 V IF=10 mA 2.1 8.4 4 16 µA µA IF=10 mA IF=40 mA Ω IF=10 mA Dynamic Output Resistance Sinking (pin 4) ROUT 20 Turn-on Time tON 650 1000 µs CL=2000 pF (see Figure 3) Measure at VOUT=5 V, IF=40 mA Turn-off Time tOFF 3 5 µs CL=2000 pF (seeFigure 3) Measure at VOUT=2 V, IF=40 mA MOSFET Driver Output Switching Speed (see Figure 3, Figure 4, Figure 5) Rise time tR 500 ns Turn-on Time tON 3.5 µs Fall time tF 300 ns Turn-off Time tOFF 3.5 µs Input-Output CMRR dv/dt 15 kV V/µs VCM=1000 V Coupling Capacitance CIO 1 pF f=1 MHz M1 Cgs=2000 pF, VS=50 V Measure at 90%–10% M1 VDS (see Figure 4) Package Isolation Characteristics 5–2 IL485 Figure 1. Switching time measurement with external voltage bias 100Ω B IF Photo diode array 2 2 4 Vo VB 2000 pF 300V Figure 5. IL485 connected in DC load switching configuration 5 B 2 5 1 ac 100Ω 2 4 Vo Photo diode array 2000 pF 300V 2N2222 CL M1 4 1KΩ M2 6 6 3 Vs 6 +5V Photo diode array Load 3 Figure 2. Switching time measurement IF M1 4 1KΩ 6 1 Photo diode array 2N2222 CL 3 5 1 +5V 5 1 Figure 4. Switching time measurement without voltage bias 3 Load ac Figure 3. IL485 connected in AC load switching configuration V out ton 5V 2V ILED t toff t 5–3 IL485