Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −5 V Peak collector current ICP −16 A Collector current IC −8 A 20 W TC = 25°C PC Ta = 25°C 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High-speed switching Collector to base voltage φ 3.2±0.1 15.0±0.5 ■ Features Collector power dissipation 2.9±0.2 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = −60 V, IE = 0 −100 µA ICEO VCE = −60 V, IE = 0 −100 µA Collector to emitter voltage VCEO IC = −10 mA, IB = 0 −60 Forward current transfer ratio hFE1 VCE = −2 V, IC = − 0.1 A 100 VCE = −2 V, IC = −5 A 30 Collector cutoff current hFE2 Collector to emitter saturation voltage VCE(sat) IC = −5 A, IB = − 0.25 A Base to emitter saturation voltage VBE(sat) IC = −5 A, IC = − 0.25 A V 230 −1.2 V −1.7 V Turn-on time ton IC = −4 A, IB1 = −400 mA 0.2 0.5 µs Storage time tstg IB2 = 400 mA, VCC = 50 V 0.1 0.15 µs Fall time tf 0.5 1.0 µs 1