Power Transistors 2SC5392 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ■ Features ● ● ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V Collector to emitter voltage VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 3.0 A Collector current IC 1.5 A Base current IB 0.5 A Collector power TC=25°C Ta=25°C dissipation 25 PC Junction temperature Tj Storage temperature Tstg 3.0±0.5 2.9±0.2 φ3.2±0.1 1.4±0.2 2.6±0.1 1.6±0.2 0.8±0.1 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package W 2.0 ■ Electrical Characteristics 15.0±0.5 ● 4.6±0.2 9.9±0.3 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5kV 13.7±0.2 4.2±0.2 ● 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 500 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 0.6A 8 Collector to emitter saturation voltage VCE(sat) IC = 0.6A, IB = 0.17A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 0.6A, IB = 0.17A 1.5 V Transition frequency fT VCE = 10V, IC = 0.1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 800V, IE = 0 max Collector cutoff current IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A, VCC = 200V V 20 MHz 1.0 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC5392 VCE(sat) — IC 0.8 IB=70mA 60mA 50mA 40mA 0.6 30mA 20mA 0.4 10mA 0.2 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) hFE — IC Forward current transfer ratio hFE 1000 Ta=25˚C 100 10 1 0.1 0.01 0.1 1 Collector current IC (mA) 2 10 100 VBE(sat) — IC Ta=25˚C 10 1 0.1 0.01 0.01 0.1 1 Collector current IC (A) 10 100 Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) TC=25˚C Collector to emitter saturation voltage VCE(sat) (V) IC — VCE 1.0 Ta=25˚C 10 1 0.1 0.01 0.01 0.1 1 Collector current IC (A) 10