MITSUBISHI M2S56D20TP-10

MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
PRELIMINARY
Some of contents are subject to change without notice.
DESCRIPTION
M2S56D20TP is a 4-bank x 16777216-word x 4-bit,
M2S56D30TP is a 4-bank x 8388608-word x 8-bit,
double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are
referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output
data and data strobe are referenced on both edges of CLK. The M2S56D20/30 TP achieves very high
speed data rate up to 133MHz, and are suitable for main memory in computer systems.
PIN CONFIGURATION
(TOP VIEW)
FEATURES
- Vdd=Vddq=2.5v±0.2V
- Double data rate architecture;
two data transfers per clock cycle
- Bidirectional, data strobe (DQS) is transmitted/received with data
- Differential clock inputs (CLK and /CLK)
- DLL aligns DQ and DQS transitions
with CLK transitions edges of DQS
- Commands entered on each positive CLK edge;
- data and data mask referenced to both edges of DQS
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 1.5/2.0/2.5 (programmable)
- Burst length- 2/4/8 (programmable)
- Burst type- sequential / interleave (programmable)
- Auto precharge / All bank precharge controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)
- SSTL_2 Interface
- 400-mil, 66-pin Thin Small Outline Package (TSOP II)
- FET switch control(/QFC)
- JEDEC standard
MITSUBISHI
ELECTRIC
x8
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NU/QFC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6 66pin TSOP(II)
7
8
9
10
11
12
13 400mil width
x
14
15 875mil length
16
17
18
19
0.65mm
20
Lead Pitch
21
22
23
24
25 ROW
26
A0-12
27 Column
28
A0-9,11(x4)
29
A0-9 (x8)
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
1
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CLK
CLK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
PIN CONFIGURATION
(TOP VIEW)
x4
x8
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NU,/QFC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
CLK,/CLK
CKE
/CS
/RAS
/CAS
/WE
DQ0-7
DQS
DM
/QFC
Vref
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NU,/QFC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66pin TSOP(II)
400mil width
x
875mil length
0.65mm
Lead Pitch
ROW
A0-12
Column
A0-9,11(x4)
A0-9 (x8)
: Master Clock
: Clock Enable
: Chip Select
: Row Address Strobe
: Column Address Strobe
: Write Enable
: Data I/O
: Data Strobe
: Write Mask
: FET Switch Control
: Reference Voltage
MITSUBISHI
ELECTRIC
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
A0-12
BA0,1
Vdd
VddQ
Vss
VssQ
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CLK
CLK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CLK
CLK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
: Address Input
: Bank Address Input
: Power Supply
: Power Supply for Output
: Ground
: Ground for Output
2
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
DQ0 - 7
/QFC DQS
I/O Buffer
QFC&QS Buffer
BLOCK DIAGRAM
DLL
Memory
Array
Bank #0
Memory
Array
Bank #1
Memory
Array
Bank #2
Memory
Array
Bank #3
Mode Register
Control Circuitry
Address Buffer
Control Signal Buffer
Clock Buffer
A0-12
/CS /RAS /CAS /WE
BA0,1
CLK,/CLK
Type Designation Code
M 2 S 56 D 3 0
DM
CKE
This rule is applied to only Synchronous DRAM family.
TP Speed Grade 10: 125MHz@CL=2.5,100MHz@CL=2.0
75: 133MHz@CL=2.5,100MHz@CL=2.0
Package Type TP: TSOP(II)
Process Generation
Function Reserved for Future Use
Organization 2n 2: x4, 3: x8
DDR Synchronous DRAM
Density 56: 256M bits
Interface V:LVTTL, S:SSTL_3, _2
Memory Style (DRAM)
Mitsubishi Main Designation
MITSUBISHI
ELECTRIC
3
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
PIN FUNCTION
SYMBOL
TYPE
DESCRIPTION
Input
Clock: CLK and /CLK are differential clock inputs. All address and control
input signals are sampled on the crossing of the positive edge of CLK and
negative edge of /CLK. Output (read) data is referenced to the crossings of
CLK and /CLK (both directions of crossing).
CKE
Input
Clock Enable: CKE controls internal clock. When CKE is low, internal clock
for the following cycle is ceased. CKE is also used to select auto / self
refresh. After self refresh mode is started, CKE becomes asynchronous
input. Self refresh is maintained as long as CKE is low.
/CS
Input
Chip Select: When /CS is high, any command means No Operation.
/RAS, /CAS, /WE
Input
Combination of /RAS, /CAS, /WE defines basic commands.
A0-12
Input
A0-12 specify the Row / Column Address in conjunction with BA0,1. The
Row Address is specified by A0-12. The Column Address is specified by
A0-9,11(x4) and A0-9(x8). A10 is also used to indicate precharge option.
When A10 is high at a read / write command, an auto precharge is
performed. When A10 is high at a precharge command, all banks are
precharged.
BA0,1
Input
Bank Address: BA0,1 specifies one of four banks to which a command is
applied. BA0,1 must be set with ACT, PRE, READ, WRITE commands.
DQ0-7(x8),
DQ0-3(x4)
Input / Output
Data Input/Output: Data bus
Input / Output
Data Strobe: Output with read data, input with write data. Edge-aligned
with read data, centered in write data. Used to capture write data.
CLK,/CLK
DQS
Output
FET Control: Optional. Output during every Read and Write access. Can
be used to control
isolation switches on modules. Open drain output.
DM
Input
Input Data Mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH along with that input data during a
WRITE access. DM is sampled on both edges of DQS. Although DM pins
are input only, the DM loading matches the DQ and DQS loading.
Vdd, Vss
Power Supply
Power Supply for the memory array and peripheral circuitry.
VddQ, VssQ
Power Supply
VddQ and VssQ are supplied to the Output Buffers only.
/QFC
Vref
Input
SSTL_2 reference voltage.
MITSUBISHI
ELECTRIC
4
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
BASIC FUNCTIONS
The M2S56D20/30TP provides basic functions, bank (row) activate, burst read / write, bank (row)
precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS and /WE at
CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and
precharge option, respectively. To know the detailed definition of commands, please see the command
truth table.
/CLK
CLK
/CS
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
define basic commands
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data appears after
/CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (autoprecharge,READA)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be written
is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write (autoprecharge, WRITEA).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates burst read
/write operation. When A10 =H at this command, all banks are deactivated (precharge all, PREA).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh address including bank address are generated
internally. After this command, the banks are precharged automatically.
MITSUBISHI
ELECTRIC
5
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
COMMAND TRUTH TABLE
COMMAND
MNEMONIC
CKE
n-1
CKE
n
/CS
/RAS
/CAS
Deselect
DESEL
H
X
H
X
X
X
X
X
X
No Operation
NOP
H
X
L
H
H
H
X
X
X
Row Address Entry &
Bank Activate
ACT
H
X
L
L
H
H
V
V
V
Single Bank Precharge
PRE
H
X
L
L
H
L
V
L
X
Precharge All Banks
PREA
H
X
L
L
H
L
X
H
X
Column Address Entry
& Write
WRITE
H
X
L
H
L
L
V
L
V
Column Address Entry
& Write with
Auto-Precharge
WRITEA
H
X
L
H
L
L
V
H
V
Column Address Entry
& Read
READ
H
X
L
H
L
H
V
L
V
Column Address Entry
& Read with
Auto-Precharge
READA
H
X
L
H
L
H
V
H
V
Auto-Refresh
REFA
H
H
L
L
L
H
X
X
X
Self-Refresh Entry
REFS
H
L
L
L
L
H
X
X
X
Self-Refresh Exit
REFSX
L
H
H
X
X
X
X
X
X
L
H
L
H
H
H
X
X
X
Burst Terminate
TERM
H
X
L
H
H
L
X
X
X
1
Mode Register Set
MRS
H
X
L
L
L
L
L
L
V
2
/WE BA0,1
A10
/AP
A0-9, note
11-12
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
NOTE:
1. Applies only to read bursts with autoprecharge disabled; this command is undefined (and should not be used) for
read bursts with autoprecharge enabled, and for write bursts.
2. BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 =
1, BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A11 provide the opcode to be written to the selected Mode Register.
MITSUBISHI
ELECTRIC
6
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE
Current State
IDLE
ROW ACTIVE
READ
(AutoPrecharge
Disabled)
/CS
/RAS /CAS /WE
Address
Command
Action
Notes
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
BA
TERM
ILLEGAL
2
L
H
L
X
BA, CA, A10
READ / WRITE ILLEGAL
2
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE / PREA
L
L
L
H
X
L
L
L
L
Op-Code,
Mode-Add
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
BA
TERM
NOP
L
H
L
H
BA, CA, A10
READ / READA
Begin Read, Latch CA,
Determine Auto-Precharge
L
H
L
L
BA, CA, A10
WRITE /
WRITEA
Begin Write, Latch CA,
Determine Auto-Precharge
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE / PREA
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
BA
TERM
Terminate Burst
Bank Active, Latch RA
NOP
4
REFA
Auto-Refresh
5
MRS
Mode Register Set
5
Precharge / Precharge All
Terminate Burst, Latch CA,
READ / READA Begin New Read, Determine
Auto-Precharge
WRITE
ILLEGAL
WRITEA
L
H
L
H
BA, CA, A10
L
H
L
L
BA, CA, A10
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE / PREA
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
MITSUBISHI
ELECTRIC
2
Bank Active / ILLEGAL
3
2
Bank Active / ILLEGAL
Terminate Burst, Precharge
7
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
Current State
WRITE
(AutoPrecharge
Disabled)
READ with
AUTO
PRECHARGE
WRITE with
AUTO
PRECHARGE
/CS
/RAS /CAS /WE
Address
Command
Action
Notes
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
BA
TERM
ILLEGAL
Terminate Burst, Latch CA,
READ / READA Begin Read, Determine AutoPrecharge
3
Terminate Burst, Latch CA,
Begin Write, Determine AutoPrecharge
3
Bank Active / ILLEGAL
2
L
H
L
H
BA, CA, A10
L
H
L
L
BA, CA, A10
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE / PREA
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
BA
TERM
ILLEGAL
L
H
L
H
BA, CA, A10
L
H
L
L
BA, CA, A10
L
L
H
H
BA, RA
ACT
Bank Active / ILLEGAL
2
L
L
H
L
BA, A10
PRE / PREA
PRECHARGE/ILLEGAL
2
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Continue Burst to END)
L
H
H
H
X
NOP
NOP (Continue Burst to END)
L
H
H
L
BA
TERM
ILLEGAL
L
H
L
H
BA, CA, A10
L
H
L
L
BA, CA, A10
L
L
H
H
BA, RA
ACT
Bank Active / ILLEGAL
2
L
L
H
L
BA, A10
PRE / PREA
PRECHARGE/ILLEGAL
2
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
MITSUBISHI
ELECTRIC
WRITE /
WRITEA
Terminate Burst, Precharge
READ / READA ILLEGAL
WRITE /
WRITEA
ILLEGAL
READ / READA ILLEGAL
WRITE /
WRITEA
ILLEGAL
8
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
Current State
/CS
PRE CHARGING
H
X
X
X
X
DESEL
NOP (Idle after tRP)
L
H
H
H
X
NOP
NOP (Idle after tRP)
L
H
H
L
BA
TERM
ILLEGAL
2
L
H
L
X
BA, CA, A10
READ / WRITE ILLEGAL
2
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE / PREA
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Row Active after tRCD)
L
H
H
H
X
NOP
NOP (Row Active after tRCD)
L
H
H
L
BA
TERM
ILLEGAL
2
L
H
L
X
BA, CA, A10
READ / WRITE ILLEGAL
2
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
2
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
BA
TERM
ILLEGAL
2
L
H
L
X
BA, CA, A10
READ / WRITE ILLEGAL
2
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
2
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
ROW
ACTIVATING
WRITE RECOVERING
/RAS /CAS /WE
Address
MITSUBISHI
ELECTRIC
Command
Action
Notes
ILLEGAL
2
NOP (Idle after tRP)
4
9
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
Current State
/CS
REFRESHING
H
X
X
X
X
DESEL
NOP (Idle after tRC)
L
H
H
H
X
NOP
NOP (Idle after tRC)
L
H
H
L
BA
TERM
ILLEGAL
L
H
L
X
BA, CA, A10
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Idle after tRSC)
L
H
H
H
X
NOP
NOP (Idle after tRSC)
L
H
H
L
BA
TERM
ILLEGAL
L
H
L
X
BA, CA, A10
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code,
Mode-Add
MRS
ILLEGAL
MODE
REGISTER
SETTING
/RAS /CAS /WE
Address
Command
Action
Notes
READ / WRITE ILLEGAL
READ / WRITE ILLEGAL
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation
NOTES:
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of
that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
MITSUBISHI
ELECTRIC
10
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE for CKE
Current State
SELFREFRESH
POWER
DOWN
ALL BANKS
IDLE
ANY STATE
other than
listed above
CKE CKE
n-1
n
/CS /RAS /CAS /WE Add
Action
Notes
H
X
X
X
X
X
X
INVALID
1
L
H
H
X
X
X
X
Exit Self-Refresh (Idle after tRC)
1
L
H
L
H
H
H
X
Exit Self-Refresh (Idle after tRC)
1
L
H
L
H
H
L
X
ILLEGAL
1
L
H
L
H
L
X
X
ILLEGAL
1
L
H
L
L
X
X
X
ILLEGAL
1
L
L
X
X
X
X
X
NOP (Maintain Self-Refresh)
1
H
X
X
X
X
X
X
INVALID
L
H
X
X
X
X
X
Exit Power Down to Idle
L
L
X
X
X
X
X
NOP (Maintain Self-Refresh)
H
H
X
X
X
X
X
Refer to Function Truth Table
2
H
L
L
L
L
H
X
Enter Self-Refresh
2
H
L
H
X
X
X
X
Enter Power Down
2
H
L
L
H
H
H
X
Enter Power Down
2
H
L
L
H
H
L
X
ILLEGAL
2
H
L
L
H
L
X
X
ILLEGAL
2
H
L
L
L
X
X
X
ILLEGAL
2
L
X
X
X
X
X
X
Refer to Current State =Power Down
2
H
H
X
X
X
X
X
Refer to Function Truth Table
H
L
X
X
X
X
X
Begin CLK Suspend at Next Cycle
3
L
H
X
X
X
X
X
Exit CLK Suspend at Next Cycle
3
L
L
X
X
X
X
X
Maintain CLK Suspend
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
NOTES:
1. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum setup time must be
satisfied before any command other than EXIT.
2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State.
3. Must be legal command.
MITSUBISHI
ELECTRIC
11
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
SIMPLIFIED STATE DIAGRAM
POWER
APPLIED
POWER
ON
PRE
CHARGE
ALL
PREA
SELF
REFRESH
REFS
MRS
MODE
REGISTER
SET
REFSX
MRS
REFA
AUTO
REFRESH
IDLE
CKEL
CKEH
Active
Power
Down
ACT
POWER
DOWN
CKEL
CKEH
ROW
ACTIVE
WRITE
BURST
STOP
READ
WRITE
READ
WRITEA
READA
READ
WRITE
WRITEA
READ
TERM
READA
READA
PRE
WRITEA
PRE
READA
PRE
PRE
CHARGE
Automatic Sequence
Command Sequence
MITSUBISHI
ELECTRIC
12
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or multifunctioning.
1. Apply VDD before or the same time as VDDQ
2. Apply VDDQ before or at the same time as VTT & Vref
3. Maintain stable condition for 200us after stable power and CLK, apply NOP or DSEL
4. Issue precharge command for all banks of the device
5. Issue EMRS
6. Issue MRS
7. Issue 2 or more Auto Refresh commands
8. Maintain stable condition for 200 cycle
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by
setting the mode register (MRS). The mode register stores these data
until the next MRS command, which may be issued when both banks are
in idle state. After tRSC from a MRS command, the DDR SDRAM is
ready for new command.
BA1 BA0 A11 A10 A9
A8
A7 A6
A5
A4
A3 A2
CLK
/CLK
/CS
/RAS
/CAS
/WE
A1 A0
BA0
0
0
0
0
0
DR
0
LTMODE
BT
BL
BA1
A11-A0
CL
Latency
Mode
DLL
Reset
0
1
000
001
010
011
100
101
110
111
Burst
Length
BL
000
001
010
011
100
101
110
111
Burst
Type
0
1
/CAS Latency
R
R
2
R
R
1.5
2.5
R
NO
YES
BT= 0
R
2
4
8
R
R
R
R
V
BT= 1
R
2
4
8
R
R
R
R
Sequential
Interleaved
R: Reserved for Future Use
MITSUBISHI
ELECTRIC
13
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
EXTENDED MODE REGISTER
DLL disable / enable mode can be programmed by setting the extended
mode register (EMRS). The extended mode register stores these data
until the next EMRS command, which may be issued when all banks are
in idle state. After tRSC from a EMRS command, the DDR SDRAM is ready
for new command.
CLK
/CLK
/CS
/RAS
/CAS
/WE
BA1 BA0 A11 A10 A9
0
1
0
0
0
A8
A7 A6
A5
A4 A3
0
0
0
0
0
A2
A1 A0
BA0
BA1
0 QFC DS DD
A11-A0
DLL
Disable
Drive
Strength
QFC
MITSUBISHI
ELECTRIC
0
1
V
0
1
DLL enable
DLL disable
0
1
Normal
Weak
Disable
Enable
14
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
/CLK
CLK
Command
Read
Write
Y
Y
Address
DQS
Q0 Q1 Q2 Q3
DQ
CL= 2
BL= 4
/CAS Latency
D0 D1 D2 D3
Burst Length
Burst Length
Initial Address BL
Column Addressing
A2
A1
A0
Sequential
Interleaved
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
8
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
-
0
0
0
1
2
3
0
1
2
3
-
0
1
1
2
3
0
1
0
3
2
4
-
1
0
2
3
0
1
2
3
0
1
-
1
1
3
0
1
2
3
2
1
0
-
-
0
0
1
0
1
1
0
1
0
-
-
1
2
MITSUBISHI
ELECTRIC
15
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Vdd
Supply Voltage
with respect to Vss
-0.5 ~ 3.7
V
-0.5 ~ 3.7
V
VddQ
Supply Voltage for Output
with respect to VssQ
VI
Input Voltage
with respect to Vss
VO
Output Voltage
with respect to VssQ
IO
Output Current
Pd
Power Dissipation
Ratings
Unit
-0.5 ~ Vdd+0.5
V
-0.5 ~ VddQ+0.5
V
50
mA
1000
mW
Ta = 25 °C
Topr
Operating Temperature
0 ~ 70
°C
Tstg
Storage Temperature
-65 ~ 150
°C
DC OPERATING CONDITIONS
(Ta=0 ~ 70°C, unless otherwise noted)
Limits
Symbol
Parameter
Min.
Typ.
Max.
Unit
Notes
Vdd
Supply Voltage
2.3
2.5
2.7
V
VddQ
Supply Voltage for Output
2.3
2.5
2.7
V
Vref
Input Reference Voltage
1.15
1.25
1.35
V
VIH(DC)
High-Level Input Voltage
Vref + 0.18
VddQ+0.3
V
VIL(DC)
Low-Level Input Voltage
-0.3
Vref - 0.18
V
VIN(DC)
Input Voltage Level, CLK and /CLK
-0.3
VddQ + 0.3
V
0.36
VddQ + 0.6
V
7
Vref - 0.04
Vref + 0.04
V
6
VID(DC) Input Differential Voltage, CLK and /CLK
VTT
I/O Termination Voltage
5
CAPACITANCE
(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
CI(A)
Input Capacitance, address pin
CI(C)
Input Capacitance, control pin
CI(K)
Input Capacitance, CLK pin
CI/O
I/O Capacitance, I/O, DQS, DM pin
VI=1.25v
f=100MHz
VI=25mVrms
CO(QF) Output Capacitance, /QFC
MITSUBISHI
ELECTRIC
Limits
Unit
Notes
3.5
pF
11
2.5
3.5
pF
11
2.5
3.5
pF
11
4.0
5.5
pF
11
2.5
3.5
pF
11
Min.
Max.
2.5
16
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, Output Open, unless otherwise noted)
Symbol
Limits(max)
Parameter/Test Conditions
Unit Notes
-75
-10
IDD0
OPERATING CURRENT: One Bank; Active-Precharge;
t RC = t RC MIN; t CK = t CK MIN; DQ, DM and DQS inputs
changing twice per clock cycle; address and control inputs changing
once per clock cycle
90
80
mA
IDD1
OPERATING CURRENT: One Bank; Active-Read-Precharge;
Burst = 2; t RC = t RC MIN; CL = 2.5; t CK = t CK MIN; IOUT= 0
mA;Address and control inputs changing once per clock cycle
110
100
mA
IDD2P
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks
idle; power-down mode; CKE ≤ VIL (MAX); t CK = t CK MIN
12
12
mA
30
30
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active;
power-down mode; CKE ≤ VIL (MAX); t CK = t CK MIN
15
15
mA
ACTIVE STANDBY CURRENT: /CS > VIH (MIN); CKE > VIH (MIN);
One bank; Active-Precharge; t RC = t RAS MAX; t CK = t CK MIN;
IDD3N
DQ,DM and DQS inputs changing twice per clock cycle; address
and other control inputs changing once per clock cycle
50
50
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;One
IDD4R bank active; Address and control inputs changing once per clock
cycle; CL = 2.5; t CK = t CK MIN; IOUT = 0 mA
140
120
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
bank active; Address and control inputs changing once per clock
IDD4W
cycle; CL = 2.5; t CK = t CK MIN; DQ, DM and DQS inputs changing
twice per clock cycle
120
100
mA
IDD5
AUTO REFRESH CURRENT: t RC = t RFC (MIN)
160
150
mA
IDD6
SELF REFRESH CURRENT: CKE≤0.2V
2
2
mA
IDLE STANDBY CURRENT: /CS > VIH (MIN); All banks idle;
IDD2N CKE > VIH (MIN); t CK = t CK MIN; Address and other control inputs
changing once per clock cycle
IDD3P
9
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)
Symbol
Parameter/Test Conditions
VIH(AC) High-Level Input Voltage (AC)
Limits
Min.
Vref + 0.35
VIL(AC) Low-Level Input Voltage (AC)
VID(AC) Input Differential Voltage, CLK and /CLK
VIX(AC) Input Crossing Point Voltage, CLK and /CLK
Max.
0.7
Notes
V
Vref - 0.35
V
VDDQ + 0.6
V
7
0.5*VDDQ+0.2
8
IOZ
Off-state Output Current /Q floating Vo=0~VDDQ
-5
5
V
µA
II
Input Current / VIN=0 ~ VddQ
-5
5
µA
MITSUBISHI
ELECTRIC
0.5*VDDQ-0.2
Unit
17
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
AC TIMING REQUIREMENTS
(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)
AC Characteristics
Symbol
-10
Min.
Max.
Min.
Max.
Unit
DQ Output Valid data delay time from CLK//CLK
-0.75
+0.75
-0.8
+0.8
ns
tDQSCK DQ Output Valid data delay time from CLK//CLK
-0.75
+0.75
-0.8
+0.8
ns
tAC
Parameter
-75
tCH
CLK High level width
0.45
0.55
0.45
0.55
tCK
tCL
CLK Low level width
0.45
0.55
0.45
0.55
tCK
CL=2.5
7.5
15
8
15
ns
CL=2
10
15
10
15
ns
CL=1.5
12
15
12
15
ns
tCK
CLK cycle time
Notes
tDH
Input Setup time (DQ,DM)
0.5
0.6
ns
tDS
Input Hold time(DQ,DM)
0.5
0.6
ns
tDIPW
DQ and DM input pulse width (for each input)
1.75
2
ns
tHZ
Data-out-high impedance time from CLK//CLK
-0.75
+0.75
-0.8
+0.8
ns
14
tLZ
Data-out-low impedance time from CLK//CLK
-0.75
+0.75
-0.8
+0.8
ns
14
DQ Valid data delay time from DQS
-0.5
+0.5
-0.6
+0.6
ns
DQ and DQS data Valid window
0.35
tDQSS
Write command to first DQS latching transition
0.75
tDQSH
DQS input High level width
0.35
0.35
tCK
tDQSL
DQS input Low level width
0.35
0.35
tCK
tDSS
DQS falling edge to CLK setup time
0.2
0.2
tCK
tDSH
DQS falling edge hold time from CLK
0.2
0.2
tCK
tMRD
Mode Register Set command cycle time
15
15
ns
0
0
ns
16
tCK
15
tDQSQ
tDV
tWPRES Write preamble setup time
0.35
1.25
0.4
tWPRE
Write preamble
0.25
0.25
tCK
tIS
Input Setup time (address and control)
1.1
1.2
ns
tIH
Input Hold time (address and control)
1.1
1.2
ns
tRPST
Read postamble
0.4
0.6
0.4
0.6
tCK
tRPRE
Read preamble
0.9
1.1
0.9
1.1
tCK
tQPST
/QFC postamble during reads
0.4
0.6
0.4
0.6
tCK
tQPRE
/QFC preamble during reads
0.9
1.1
0.9
1.1
tCK
4
ns
2
ns
tQOH
/QFC output hold time for writes
MITSUBISHI
ELECTRIC
4
1.25
2
1.25
0.6
tCK
Write postamble
/QFC output access time from CLK//CLK, for write
0.4
1.25
tWPST
tQCK
0.6
0.75
tCK
18
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
AC TIMING REQUIREMENTS(Continues)
(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)
AC Characteristics
Symbol
Parameter
-75
-10
Min.
Max.
Min.
Max.
Unit
120,000
50
120,000
ns
Notes
tRAS
Row Active time
45
tRC
Row Cycle time(operation)
65
70
ns
tRFC
Auto Ref. to Active/Auto Ref. command period
75
80
ns
tRCD
Row to Column Delay
20
20
ns
tRP
Row Precharge time
20
20
ns
tRRD
Act to Act Delay time
15
15
ns
tWR
Write Recovery time
15
15
ns
tDAL
Auto Precharge write recovery + precharge time
35
35
ns
tWTR
Internal Write to Read Command Delay
1
1
tCK
tXSNR
Exit Self Ref. to non-Read command
75
80
ns
tXSRD
Exit Self Ref. to -Read command
200
200
tCK
tXPNR
Exit Power down to command
1
1
tCK
tXPRD
Exit Power down to -Read command
1
1
tCK
18
tREFI
Average Periodic Refresh interval
7.8
7.8
us
17
Output Load Condition
VTT=VREF
10cm
VREF
DQS
DQ
50Ω
VREF
25Ω
VOUT
Zo=50Ω
50Ω
30pF
VREF
Output Timing
Measurement
Reference Point
VTT=VREF
MITSUBISHI
ELECTRIC
19
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
Notes
1. All voltages referenced to Vss.
2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply
voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.
3. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5V in the test environment, but input timing is still
referenced to VREF (or to the crossing point for CK//CK), and parameter specifications are guaranteed for the specified
AC input levels under normal use conditions. The minimum slew rate for the input signals is 1V/ns in the range between
VIL(AC) and VIH(AC).
4. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver will effectively switch
as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back
above (below) the DC input LOW (HIGH) level.
5. VREF is expected to be equal to 0.5*VddQ of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on VREF may not exceed +/-2% of the DC value.
6. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set
equal to VREF, and must track variations in the DC level of VREF.
7. VID is the magnitude of the difference between the input level on CLK and the input level on /CLK.
8. The value of VIX is expected to equal 0.5*VddQ of the transmitting device and must track variations in the DC level of
the same.
9. Enables on-chip refresh and address counters.
10. IDD specifications are tested after the device is properly initialized.
11. This parameter is sampled. VddQ = +2.5V ±0.2V, Vdd = +2.5V ±0.2V , f = 100 MHz, Ta = 25°C, VOUT(DC) =
VddQ/2, VOUT(PEAK TO PEAK) = 25mV. DM inputs are grouped with I/O pins - reflecting the fact that they are
matched in loading (to facilitate trace matching at the board level).
12. The CLK//CLK input reference level (for timing referenced to CLK//CLK) is the point at which CLK and /CLK cross;
the input reference level for signals other than CLK//CLK, is VREF.
13. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE =<
0.3VddQ is recognized as LOW.
14. t HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not
referenced to a specific voltage level, but specify when the device output is no longer driving (HZ), or begins driving
(LZ).
15. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this
parameter, but system performance (bus turnaround) will degrade accordingly.
16. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this
CLK edge. A valid transition is defined as monotonic, and meeting the input slew rate specifications of the device. When
no writes were previously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous
write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on
tDQSS.
17. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
18. tXPRD should be 200 tCLK in the condition of the unstable CLK operation during the power down mode.
MITSUBISHI
ELECTRIC
20
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
Read Operation
tCK
tCH
tCL
/CLK
CLK
tIS
Cmd &
Add.
tIH
Valid Data
tDQSCK
VREF
tRPST
tRPRE
DQS
tQPST
tDQSQ
tQPRE
/QFC
tDV
tAC
DQ
Write Operation / tDQSS=max.
/CLK
CLK
tDQSS
DQS
tWPST
tDSS
tWPRES
tQCK
tDQSL
tWPRE
/QFC
tDQSH
tDS
tQOH(min)
tDH
DQ
Write Operation / tDQSS=min.
/CLK
CLK
tDSH
tDQSS
DQS
tWPST
tWPRES
tQCK
/QFC
tWPRE
tDQSL
tDS
tDQSH
tQOH(max)
tDH
DQ
MITSUBISHI
ELECTRIC
21
MITSUBISHI LSIs
DDR SDRAM (Rev.0.0)
M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
OPERATIONAL DESCRIPTION
BANK ACTIVATE
The DDR SDRAM has four independent banks. Each bank is activated by the ACT command
with the bank addresses (BA0,1). A row is indicated by the row address A11-0. The minimum
activation interval between one bank and the other bank is tRRD. Maximum 2 ACT commands
are allowed within tRC,although the number of banks which are active concurrently is not limited.
PRECHARGE
The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active,
the precharge all command (PREA,PRE+A10=H) is available to deactivate them at the same
time. After tRP from the precharge, an ACT command to the same bank can be issued.
Bank Activation and Precharge All (BL=8, CL=2)
/CLK
CLK
2 ACT command / tRCmin
Command
ACT
ACT READ
tRRD
A0-9,11-12
Xb
BA0,1
00
ACT
tRP
Y
tRCD
Xa
PRE
tRAS
Xa
A10
tRCmin
Xb
BL/2
Xb
01
0
1
00
Xb
01
DQS
DQ
Qa0 Qa1
Qa2 Qa3 Qa4 Qa5 Qa6 Qa7
Precharge all
A precharge command can be issued at BL/2 from a read command without data loss.
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Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
READ
After tRCD from the bank activation, a READ command can be issued. 1st Output data is
available after the /CAS Latency from the READ, followed by (BL-1) consecutive data when the
Burst Length is BL. The start address is specified by A11,A9-A0(x4)/A9-A0(x8), and the address
sequence of burst data is defined by the Burst Type. A READ command may be applied to any active
bank, so the row precharge time (tRP) can be hidden behind continuous output data by interleaving the
multiple banks. When A10 is high at a READ command, the auto-precharge(READA) is
performed. Any command(READ,WRITE,PRE,ACT) to the same bank is inhibited till the internal
precharge is complete. The internal precharge starts at BL/2 after READA. The next ACT
command can be issued after (BL/2+tRP) from the previous READA.
Multi Bank Interleaving READ (BL=8, CL=2)
/CLK
CLK
Command
ACT
READ ACT
READ PRE
tRCD
A0-9,11-12
Xa
Y
Xb
Y
A10
Xa
0
Xb
0
0
10
00
BA0,1
00
00
10
DQS
DQ
Qa0 Qa1 Qa2 Qa3
Qa4 Qa5 Qa6 Qa7 Qb0 Qb1
Qb2 Qb3 Qb4 Qb5 Qb7 Qb8
Burst Length
/CAS latency
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
READ with Auto-Precharge (BL=8, CL=2)
/CLK
CLK
BL/2 + tRP
Command
ACT
READ
ACT
BL/2
tRCD
tRP
A0-9,11-12
Xa
Y
Xb
A10
Xa
1
Xb
BA0,1
00
00
00
DQS
Qa0 Qa1 Qa2 Qa3
DQ
Qa4 Qa5 Qa6 Qa7
Internal precharge start
READ Auto-Precharge Timing (BL=8)
/CLK
CLK
Command
ACT
READ
BL/2
CL=2.5 DQ
CL=2
Qa0 Qa1 Qa2
Qa0 Qa1 Qa2 Qa3 Qa4
DQ
CL=1.5 DQ
Qa3 Qa4 Qa5 Qa6 Qa7
Qa0 Qa1 Qa2 Qa3 Qa4
Qa5 Qa6 Qa7
Qa5 Qa6 Qa7
Internal Precharge Start Timing
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
WRITE
After tRCD from the bank activation, a WRITE command can be issued. 1st input data is set from the
WRITE command with data strobe input, following (BL-1) data are written into RAM, when the Burst
Length is BL. The start address is specified by A11,A9-A0(x4)/A9-A0(x8), and the address sequence of
burst data is defined by the Burst Type. A WRITE command may be applied to any active bank, so the
row precharge time (tRP) can be hidden behind continuous input data by interleaving the multiple banks.
From the last data to the PRE command, the write recovery time (tWRP) is required. When A10 is high at
a WRITE command, the auto-precharge(WRITEA) is performed. Any
command(READ,WRITE,PRE,ACT) to the same bank is inhibited till the internal precharge is complete.
The next ACT command can be issued after tDAL from the last input data cycle.
Multi Bank Interleaving WRITE (BL=8)
/CLK
CLK
Command
ACT
A0-9,11-12
Xa
A10
BA0,1
WRITE ACT
tRCD
WRITE
PRE
PRE
tRCD
Ya
Xb
Yb
Xa
0
Xb
0
0
0
00
00
10
10
00
10
DQS
Da0 Da1 Da2 Da3 Da4 Da5
DQ
Da6 Da7 Db0 Db1 Db2 Db3
Db4 Db5 Db6 Db7
WRITE with Auto-Precharge (BL=8)
/CLK
CLK
Command
ACT
WRITE
ACT
tRCD
A0-9,11-12
tDAL
Xa
Y
Xb
A10
Xa
1
Xb
BA0,1
00
00
00
DQS
DQ
Da0 Da1 Da2 Da3 Da4 Da5
Da6 Da7
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
BURST INTERRUPTION
[Read Interrupted by Read]
Burst read operation can be interrupted by new read of any bank. Random column access is allowed.
READ to READ interval is minimum 1CLK.
Read Interrupted by Read (BL=8, CL=2)
/CLK
CLK
Command
READ READ
READ
READ
Yi
Yj
Yk
Yl
A10
0
0
0
0
BA0,1
00
00
10
01
A0-9,11
DQS
Qai0 Qai1 Qaj0 Qaj1 Qaj2 Qaj3 Qak0 Qak1 Qak2 Qak3 Qak4 Qak5 Qal0 Qal1 Qal2 Qal3 Qal4 Qal5 Qal6 Qal7
DQ
[Read Interrupted by precharge]
Burst read operation can be interrupted by precharge of the same bank. READ to PRE interval is
minimum 1 CLK. A PRE command to output disable latency is equivalent to the /CAS Latency. As
a result, READ to PRE interval determines valid data length to be output. The figure below shows
examples of BL=8.
Read Interrupted by Precharge (BL=8)
/CLK
CLK
Command
READ
PRE
DQS
DQ
Command
CL=2.5
READ
Q0 Q1
Q2 Q3 Q4 Q5
Q0 Q1
Q2 Q3
PRE
DQS
DQ
Command
READ PRE
DQS
DQ
Q0 Q1
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
Read Interrupted by Precharge (BL=8)
/CLK
CLK
Command
READ
PRE
DQS
Q0 Q1
DQ
Command
CL=2.0
READ
Q2 Q3 Q4 Q5
PRE
DQS
DQ
Command
Q0 Q1
Q2 Q3
READ PRE
DQS
Q0 Q1
DQ
Command
READ
PRE
DQS
Q0 Q1
DQ
Command
CL=1.5
READ
Q2 Q3 Q4 Q5
PRE
DQS
DQ
Command
Q0 Q1
Q2 Q3
READ PRE
DQS
DQ
Q0 Q1
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
[Read Interrupted by Burst Stop]
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval
is minimum 1 CLK. A TERM command to output disable latency is equivalent to the /CAS Latency.
As a result, READ to TERM interval determines valid data length to be output. The figure below
shows examples of BL=8.
Read Interrupted by TERM (BL=8)
/CLK
CLK
Command
READ
TERM
DQS
DQ
Command
CL=2.5
READ
Q0 Q1
Q2 Q3 Q4 Q5
Q0 Q1
Q2 Q3
TERM
DQS
DQ
Command
READ TERM
DQS
Q0 Q1
DQ
Command
READ
TERM
DQS
Q0 Q1
DQ
Command
CL=2.0
READ
Q2 Q3 Q4 Q5
TERM
DQS
DQ
Command
Q0 Q1
Q2 Q3
READ TERM
DQS
DQ
Q0 Q1
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
[Read Interrupted by Write with TERM]
Read Interrupted by TERM (BL=8)
/CLK
CLK
Command
CL=2.5
READ
DQS
DQ
Command
CL=2.0
Q0 Q1
READ
Q2 Q3
D0
D1
D2
D3
D4
D5
WRITE
TERM
DQS
DQ
Command
CL=1.5
WRITE
TERM
Q0 Q1
READ
Q2 Q3
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D4
D5
D6
D7
WRITE
TERM
DQS
DQ
Q0 Q1
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
[Write interrupted by Write]
Burst write operation can be interrupted by write of any bank. Random column access is
allowed. WRITE to WRITE interval is minimum 1 CLK.
Write Interrupted by Write (BL=8)
/CLK
CLK
Command
A0-9,11
WRITE WRITE
WRITE
WRITE
Yi
Yj
Yk
Yl
A10
0
0
0
0
BA0,1
00
00
10
00
DQS
Dai0 Dai1 Daj0 Daj1 Daj2 Daj3 Dak0 Dak1 Dak2 Dak3 Dak4 Dak5 Dal0 Dal1 Dal2 Dal3 Dal4 Dal5 Dal6 Dal7
DQ
[Write interrupted by Read]
Burst write operation can be interrupted by read of the same or the other bank. Random column access is
allowed. Internal WRITE to READ command interval(tWTR) is minimum 1 CLK. The input data on DQ
at the interrupting READ cycle is "don't care". tWTR is referenced from the first positive edge after the
last data input.
Write Interrupted by Read (BL=8, CL=2.5)
/CLK
CLK
Command
WRITE
READ
A0-9,11-12
Yi
Yj
A10
0
0
BA0,1
00
00
DM
tWTR
QS
DQ
Dai0 Dai1
Qaj0 Qaj1 Qaj2 Qaj3 Qaj4 Qaj5 Qaj6 Qaj7
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
[Write interrupted by Precharge]
Burst write operation can be interrupted by precharge of the same or all bank. Random column access is
allowed. tWR is referenced from the first positive CLK edge after the last data input.
Write Interrupted by Precharge (BL=8, CL=2.5)
/CLK
CLK
Command
WRITE
A0-9,11-12
Yi
A10
0
BA0,1
00
PRE
00
tWR
DM
QS
DQ
Dai0 Dai1
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Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
[Initialize and Mode Register sets]
/CLK
CLK
Command
NOP
PRE
A0-9,11,12
A10
BA0,1
1
EMRS
MRS
Code
Code
Code
Code
10
00
PRE
AR
AR
MRS
ACT
Xa
1
Code
Xa
00
Xa
DQS
DQ
tMRD
tMRD
tRP
tRFC
tRFC
tMRD
[AUTO REFRESH]
Single cycle of auto-refresh is initiated with a REFA(/CS=/RAS=/CAS=L,/WE=CKE=H) command.
The refresh address is generated internally. 8192 REFA cycles within 64ms refresh 256Mbits memory
cells. The auto-refresh is performed on 4 banks concurrently. Before performing an auto refresh, all
banks must be in the idle state. Auto-refresh to auto-refresh interval is minimum tRFC . Any command
must not be supplied to the device before tRFC from the REFA command.
Auto-Refresh
/CLK
CLK
/CS
NOP or DESELECT
/RAS
/CAS
/WE
CKE
tRFC
A0-12
BA0,1
Auto Refresh on All Banks
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M2S56D20/ 30 TP
Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
[SELF REFRESH]
Self -refresh mode is entered by issuing a REFS command (/CS=/RAS=/CAS=L,/WE=H,CKE=L). Once
the self-refresh is initiated, it is maintained as long as CKE is kept low. During the self-refresh mode, CKE
is asynchronous and the only enable input, all other inputs including CLK are disabled and ignored, so that
power consumption due to synchronous inputs is saved. To exit the self-refresh, supplying stable CLK
inputs, asserting DESEL or NOP command and then asserting CKE for longer than tXSNR/tXSRD.
Self-Refresh
/CLK
CLK
/CS
/RAS
/CAS
/WE
CKE
A0-12
X
Y
BA0,1
X
Y
tXSNR
tXSRD
Self Refresh Exit
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Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
[Asynchronous SELF REFRESH]
Asynchronous Self -refresh mode is entered by CKE=L within 2 tCLK after issuing a REFA command
(/CS=/RAS=/CAS=L,/WE=H). Once the self-refresh is initiated, it is maintained as long as CKE is kept
low. During the self-refresh mode, CKE is asynchronous and the only enable input, all other inputs
including CLK are disabled and ignored, so that power consumption due to synchronous inputs is saved.
To exit the self-refresh, supplying stable CLK inputs, asserting DESEL or NOP command and then
asserting CKE for longer than tXSNR/tXSRD.
Asynchronous Self-Refresh
/CLK
CLK
/CS
/RAS
/CAS
/WE
CKE
max 2 tCLK
A0-12
BA0,1
tXSNR
Self Refresh Exit
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Sep.'99 Preliminary
256M Double Data Rate Synchronous DRAM
[Power DOWN]
The purpose of CLK suspend is power down. CKE is synchronous input except during the self-refresh
mode. A command at cycle is ignored. From CKE=H to normal function, DLL recovery time is NOT
required in the condition of the stable CLK operation during the power down mode.
Power Down by CKE
/CLK
CLK
Standby Power Down
CKE
Command
PRE NOP
NOP
tXPNR/
tXPRD
Active Power Down
CKE
Command
Valid
ACT
NOP
NOP
Valid
[DM CONTROL]
DM is defined as the data mask for writes. During writes,DM masks input data word by word. DM to
write mask latency is 0.
DM Function(BL=8,CL=2)
/CLK
CLK
Command
Write
READ
Don't Care
DM
DQS
DQ
D0 D1
D3 D4
D5 D6
D7
Q0 Q1 Q2 Q3 Q4 Q5 Q6
masked by DM=H
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Keep safety first in your circuit designs!
MITSUBISHI LSIs
DDR SDRAM
(Rev.0.0)
Mitsubishi
Electric Corporation puts the maximum effort into making
semiconductor products better and more reliable,but there is always
the possibility
M2S56D20/
30
Sep.'99 Preliminary
TP
that trouble may occur with them. Trouble with semiconductors consideration to
256M Double Data Rate Synchronous DRAM
safety when making your circuit designs,with appropriate measures such as (i)
placement of substitutive,auxiliary circuits,(ii) use of non-flammable material or (iii)
prevention against any malfunction or mishap.
Notes regarding these materials
These materials are intended as a reference to assist our customers in the selection
of the Mitsubishi semiconductor product best suited to the customer's
application;they do not convey any license under any intellectual property rights,or
any other rights,belonging to Mitsubishi Electric Corporation or a third party.
Mitsubishi Electric Corporation assumes no responsibility for any damage, or
infringement of any third-party's rights,originating in the use of any product
data,diagrams,charts or circuit application examples contained in these materials.
All information contained in these materials,including product data, diagrams and
charts,represent information on products at the time of publication of these
materials,and are subject to change by Mitsubishi Electric Corporation without
notice due to product improvements or other reasons. It is therefore recommended
that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor for the latest product information before
purchasing a product listed herein.
Mitsubishi Electric Corporation semiconductors are not designed or manufactured
for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Mitsubishi Electric Corporation or an
authorized Mitsubishi Semiconductor product distributor when considering the use
of a product contained herein for special applications,such as apparatus or systems
for transportation, vehicular,medical,aerospace,nuclear,or undersea repeater use.
The prior written approval of Mitsubishi Electric Corporation is necessary to
reprint or reproduce in whole or in part these materials.
If these products or technologies are subject the Japanese export control
restrictions,they must be exported under a license from the Japanese government
and cannot be imported into a country other than the approved destination. Any
diversion or reexport contrary to the export control laws and regulations of Japan
and/or the country of destination is prohibited.
Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor for further details on these materials or the
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MITSUBISHI
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