PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 6.0±0.2 (0.5) 1.5±0.2 22.25±1.0 Ta = 25°C Rating Unit Reverse voltage VR 30 V Power dissipation PD 100 mW Operating ambient temperature Topr −30 to +85 °C Storage temperature Tstg −40 to +100 °C 0.6±0.1 (2.54) (2.3) Symbol (2-0.6±0.1) 0.5 3.8±0.2 Parameter (1.32) (1.5) ■ Absolute Maximum Ratings 31.25±1.0 • Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.) • High sensitivity, high reliability • Peak emission wavelength matched with infrared light emitting diodes: λp = 900 nm (typ.) • Wide detection area, wide half-power angle: θ = 70° (typ.) • Adoption of visible light cutoff resin 7.5±0.2 (2) ■ Features (2.3) 1 2 1: Anode 2: Cathode LSRLR102NC-001 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Dark current Conditions ID VR = 10 V IL VR = 10 V, L = 1 000 lx Sensitivity to infrared radiation *2 SIR VR = 5 V, H = 0.1 mW/cm2 Peak emission wavelength λp Rise time *2 tr Photocurrent Fall time *1 *2 Min tr Max Unit 5 50 nA 55 µA 6.0 µA VR = 10 V 900 nm VR = 10 V, RL = 1 kΩ 50 ns 4.5 tf Rise time *2 Typ 50 ns VR = 10 V, RL = 100 kΩ 5 µs Fall time *2 tf 5 µs Terminal capacitance Ct VR = 0 V, f = 1 MHz 70 pF Half-power angle θ The angle from which photocurrent becomes 50% 70 ° Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Source: Infrared radiation (λ = 940 nm) *3: Switching time measurement circuit Sig. in VR (Input pulse) λP = 900 nm 50 Ω 90% 10% Sig. out RL (Output pulse) tr tr: Rise time tf: Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00036BED 1 PNZ323 PD Ta IL L 103 120 VR = 10 V Ta = 25°C T = 2 856 K 102 80 60 40 VR = 10 V 102 Dark current ID (nA) Photocurrent IL (µA) Power dissipation PD (mW) 100 ID T a 103 10 1 10 1 20 0 −30 0 20 40 60 80 10−1 10 100 102 ∆IL Ta 0 40 60 40 20 700 Ct VR 60 40 20 1 20 0 1 000 1 100 1 200 80 40 10 Reverse voltage VR (V) 102 Sig. in 10 50 Ω 80 ID V R 90% 10% tr tf 1 10−1 10−2 −1 10 40 102 VR = 10 V Sig. out RL 0 Half-power angle θ (°) Dark current ID (nA) Rise time tr , Fall time tf (µs) 80 10−1 900 40 tr , tf RL 102 100 0 −2 10 800 60 Wavelength λ (nm) Ambient temperature Ta (°C) Terminal capacitance Ct (pF) Ta = 25°C 80 0 600 80 80 Directivity characteristics Relative sensitivity ∆S (%) Relative sensitivity ∆S (%) Relative photocurrent ∆IL (%) 40 40 100 VR = 10 V Ta = 25°C 80 80 0 Ambient temperature Ta (°C) Spectral sensitivity characteristics 100 VR = 10 V L = 1 000 lx T = 2 856 K 120 0 −40 2 10−1 −40 104 Illuminance L (lx) Ambient temperature Ta (°C) 160 103 1 10 Load resistance RL (kΩ) SHE00036BED 102 10 1 10−1 0 8 16 24 32 40 Reverse voltage VR (V) 48 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP