Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. ■ Absolute Maximum Ratings +0.2 1.27 Parameter Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 0.45 –0.1 (Ta=25˚C) 1.27 2.3±0.2 ● 13.5±0.5 ■ Features 4.0±0.2 5.1±0.2 5.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit –1 µA Collector cutoff current ICBO VCB = –100V, IE = 0 Collector to emitter voltage VCEO IC = –0.1mA, IB = 0 –150 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V Forward current transfer ratio hFE * VCE = –5V, IC = –10mA 130 Collector to emitter saturation voltage VCE(sat) IC = –30mA, IB = –3mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz Noise voltage NV *h FE VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 450 –1 200 150 V MHz 5 pF 300 mV Rank classification Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450 1 2SA1123 Transistor PC — Ta IC — VCE –120 –70 0.6 0.5 0.4 0.3 0.2 IB=–500µA –450µA –400µA –350µA –300µA –250µA –200µA –60 –50 –40 –150µA –30 –100µA –20 0 40 60 80 100 120 140 160 –2 –10 –3 –1 Ta=75˚C 25˚C – 0.1 –25˚C – 0.03 –1 –3 –10 –30 –100 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 –1 –3 –10 –6 –8 –10 –40 –12 0 – 0.4 –30 –100 Collector to base voltage VCB (V) – 0.8 –1.2 –1.6 –2.0 Base to emitter voltage VBE (V) fT — IE 300 VCE=–5V 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 – 0.1 – 0.3 VCB=–10V Ta=25˚C 250 200 150 100 50 0 –1 –3 –10 –30 Collector current IC (mA) Cob — VCB 6 –4 600 Forward current transfer ratio hFE –30 – 0.01 – 0.1 – 0.3 –60 hFE — IC IC/IB=10 – 0.3 –80 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 –25˚C 0 0 Transition frequency fT (MHz) 20 Ta=75˚C –20 –50µA –10 0.1 Collector current IC (mA) 0.7 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C –100 0.8 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C 0.9 0 2 IC — VBE –80 Collector current IC (mA) Collector power dissipation PC (W) 1.0 –100 1 3 10 30 Emitter current IE (mA) 100