PANASONIC 2SC4715

Transistor
2SC4715
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
3.0±0.2
4.0±0.2
■ Features
marking
(Ta=25˚C)
1
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
150
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
100
mA
Collector current
IC
50
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
2
3
2.0±0.2
■ Absolute Maximum Ratings
15.6±0.5
●
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
0.7±0.1
●
+0.2
0.45–0.1
●
1.27 1.27
2.54±0.15
■ Electrical Characteristics
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
1
µA
Collector cutoff current
ICBO
VCB = 100V, IE = 0
Collector to emitter voltage
VCEO
IC = 100µA, IB = 0
150
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
V
*1
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
IC = 30mA, IB = 3mA
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
Noise voltage
NV
*1h
FE
VCE = 5V, IC = 10mA
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
130
330
1
3
V
pF
160
MHz
150
mV
Rank classification
Rank
R
S
hFE
130 ~ 220
185 ~ 330
1
Transistor
2SC4715
IC — VCE
IB=10mA
150
400
Collector current IC (mA)
Collector power dissipation PC (mW)
Ta=25˚C
300
200
100
9mA
8mA
7mA
6mA
5mA
4mA
3mA
120
90
2mA
1mA
60
30
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
8
10
12
Cob — VCB
6
VCE=5V
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
Collector output capacitance Cob (pF)
300
Forward current transfer ratio hFE
6
Collector to emitter voltage VCE (V)
hFE — IC
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1
3
10
30
100
300
Collector current IC (mA)
2
VCE(sat) — IC
180
1000
1
3
10
30
100
Collector to base voltage VCB (V)
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
500
10
IC/IB=10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.003
0.001
1
3
10
30
100
300
Collector current IC (mA)
1000