Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 ■ Electrical Characteristics 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 1 µA Collector cutoff current ICBO VCB = 100V, IE = 0 Collector to emitter voltage VCEO IC = 100µA, IB = 0 150 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Noise voltage NV *1h FE VCE = 5V, IC = 10mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 130 330 1 3 V pF 160 MHz 150 mV Rank classification Rank R S hFE 130 ~ 220 185 ~ 330 1 Transistor 2SC4715 IC — VCE IB=10mA 150 400 Collector current IC (mA) Collector power dissipation PC (mW) Ta=25˚C 300 200 100 9mA 8mA 7mA 6mA 5mA 4mA 3mA 120 90 2mA 1mA 60 30 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 8 10 12 Cob — VCB 6 VCE=5V 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 Collector output capacitance Cob (pF) 300 Forward current transfer ratio hFE 6 Collector to emitter voltage VCE (V) hFE — IC f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 1 3 10 30 100 300 Collector current IC (mA) 2 VCE(sat) — IC 180 1000 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 500 10 IC/IB=10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 1 3 10 30 100 300 Collector current IC (mA) 1000